The effect of line edge roughness defect on the electronic transport properties of Boron-doped graphene nanoribbon rectifier
A rectifying behavior is achieved by means of boron doping in defected armchair graphene nanoribbon (AGNR). In the proposed AGNR device, the effect of line edge roughness (LER) is investigated on the electronic and transport characteristics. Moreover, the width of AGNR is changed by 6, 7 and 8 atoms...
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| Veröffentlicht in: | Applied physics. A, Materials science & processing Materials science & processing, 2020-04, Vol.126 (4), Article 296 |
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| creator | Golzani, Mozhgan Poliki, Mohammad Haji-Nasiri, Saeed |
| description | A rectifying behavior is achieved by means of boron doping in defected armchair graphene nanoribbon (AGNR). In the proposed AGNR device, the effect of line edge roughness (LER) is investigated on the electronic and transport characteristics. Moreover, the width of AGNR is changed by 6, 7 and 8 atoms in the fixed length, and the position of the boron doping is changed in the center or edge of the left electrode. The electronic features of the devices are analyzed through density function theory and non-equilibrium Green’s function method. The LER defect and any change in the doping position or the width of AGNR affect the energy alignments, molecular orbital levels, transfer functions and density of states (DOS) that lead to a change in the rectifying behavior of the device. Without the LER defect, rectifying ratio at the ribbon width of 7w in the presence of boron doping at the center, and edge is achieved 16 and 5.88, respectively. But interestingly, by considering the LER defect in the same situation these values increase to 362 and 102, respectively. |
| doi_str_mv | 10.1007/s00339-020-3437-4 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2383816255</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2383816255</sourcerecordid><originalsourceid>FETCH-LOGICAL-c316t-2d14ee128b0f0df6d7047889301b79e2640850a07b590c3fb69f50e6e4c778a13</originalsourceid><addsrcrecordid>eNp1kE1LAzEQhoMoWKs_wFvAc3TyscnuUYtfUPBSz2E_Ju2WmqzJ9iD4482ygifnMkzmfZ8JLyHXHG45gLlLAFJWDAQwqaRh6oQsuJKCgZZwShZQKcNKWelzcpHSHnIpIRbke7NDis5hO9Lg6KH3eey2SGM4bnceU6IdzltPx0l7yEMMvm_pGGufhhBHOsQwYBx7TBPkIeQ96_JTR7exHnaYob72IfZNkzExE3rXY7wkZ64-JLz67Uvy_vS4Wb2w9dvz6-p-zVrJ9chExxUiF2UDDjqnOwPKlGUlgTemQqEVlAXUYJqigla6RleuANSoWmPKmssluZm5-Z-fR0yj3Ydj9PmkFbKUJdeiKLKKz6o2hpQiOjvE_qOOX5aDnUK2c8g2h2ynkK3KHjF7Utb6LcY_8v-mHySIgFM</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2383816255</pqid></control><display><type>article</type><title>The effect of line edge roughness defect on the electronic transport properties of Boron-doped graphene nanoribbon rectifier</title><source>Springer Nature - Complete Springer Journals</source><creator>Golzani, Mozhgan ; Poliki, Mohammad ; Haji-Nasiri, Saeed</creator><creatorcontrib>Golzani, Mozhgan ; Poliki, Mohammad ; Haji-Nasiri, Saeed</creatorcontrib><description>A rectifying behavior is achieved by means of boron doping in defected armchair graphene nanoribbon (AGNR). In the proposed AGNR device, the effect of line edge roughness (LER) is investigated on the electronic and transport characteristics. Moreover, the width of AGNR is changed by 6, 7 and 8 atoms in the fixed length, and the position of the boron doping is changed in the center or edge of the left electrode. The electronic features of the devices are analyzed through density function theory and non-equilibrium Green’s function method. The LER defect and any change in the doping position or the width of AGNR affect the energy alignments, molecular orbital levels, transfer functions and density of states (DOS) that lead to a change in the rectifying behavior of the device. Without the LER defect, rectifying ratio at the ribbon width of 7w in the presence of boron doping at the center, and edge is achieved 16 and 5.88, respectively. But interestingly, by considering the LER defect in the same situation these values increase to 362 and 102, respectively.</description><identifier>ISSN: 0947-8396</identifier><identifier>EISSN: 1432-0630</identifier><identifier>DOI: 10.1007/s00339-020-3437-4</identifier><language>eng</language><publisher>Berlin/Heidelberg: Springer Berlin Heidelberg</publisher><subject>Applied physics ; Boron ; Characterization and Evaluation of Materials ; Condensed Matter Physics ; Density functional theory ; Density of states ; Doping ; Electron transport ; Electronic devices ; Graphene ; Machines ; Manufacturing ; Materials science ; Molecular orbitals ; Nanoribbons ; Nanotechnology ; Optical and Electronic Materials ; Physics ; Physics and Astronomy ; Processes ; Rectifiers ; Roughness ; Surfaces and Interfaces ; Thin Films ; Transfer functions ; Transport properties</subject><ispartof>Applied physics. A, Materials science & processing, 2020-04, Vol.126 (4), Article 296</ispartof><rights>Springer-Verlag GmbH Germany, part of Springer Nature 2020</rights><rights>Springer-Verlag GmbH Germany, part of Springer Nature 2020.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c316t-2d14ee128b0f0df6d7047889301b79e2640850a07b590c3fb69f50e6e4c778a13</citedby><cites>FETCH-LOGICAL-c316t-2d14ee128b0f0df6d7047889301b79e2640850a07b590c3fb69f50e6e4c778a13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s00339-020-3437-4$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s00339-020-3437-4$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27903,27904,41467,42536,51298</link.rule.ids></links><search><creatorcontrib>Golzani, Mozhgan</creatorcontrib><creatorcontrib>Poliki, Mohammad</creatorcontrib><creatorcontrib>Haji-Nasiri, Saeed</creatorcontrib><title>The effect of line edge roughness defect on the electronic transport properties of Boron-doped graphene nanoribbon rectifier</title><title>Applied physics. A, Materials science & processing</title><addtitle>Appl. Phys. A</addtitle><description>A rectifying behavior is achieved by means of boron doping in defected armchair graphene nanoribbon (AGNR). In the proposed AGNR device, the effect of line edge roughness (LER) is investigated on the electronic and transport characteristics. Moreover, the width of AGNR is changed by 6, 7 and 8 atoms in the fixed length, and the position of the boron doping is changed in the center or edge of the left electrode. The electronic features of the devices are analyzed through density function theory and non-equilibrium Green’s function method. The LER defect and any change in the doping position or the width of AGNR affect the energy alignments, molecular orbital levels, transfer functions and density of states (DOS) that lead to a change in the rectifying behavior of the device. Without the LER defect, rectifying ratio at the ribbon width of 7w in the presence of boron doping at the center, and edge is achieved 16 and 5.88, respectively. But interestingly, by considering the LER defect in the same situation these values increase to 362 and 102, respectively.</description><subject>Applied physics</subject><subject>Boron</subject><subject>Characterization and Evaluation of Materials</subject><subject>Condensed Matter Physics</subject><subject>Density functional theory</subject><subject>Density of states</subject><subject>Doping</subject><subject>Electron transport</subject><subject>Electronic devices</subject><subject>Graphene</subject><subject>Machines</subject><subject>Manufacturing</subject><subject>Materials science</subject><subject>Molecular orbitals</subject><subject>Nanoribbons</subject><subject>Nanotechnology</subject><subject>Optical and Electronic Materials</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Processes</subject><subject>Rectifiers</subject><subject>Roughness</subject><subject>Surfaces and Interfaces</subject><subject>Thin Films</subject><subject>Transfer functions</subject><subject>Transport properties</subject><issn>0947-8396</issn><issn>1432-0630</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp1kE1LAzEQhoMoWKs_wFvAc3TyscnuUYtfUPBSz2E_Ju2WmqzJ9iD4482ygifnMkzmfZ8JLyHXHG45gLlLAFJWDAQwqaRh6oQsuJKCgZZwShZQKcNKWelzcpHSHnIpIRbke7NDis5hO9Lg6KH3eey2SGM4bnceU6IdzltPx0l7yEMMvm_pGGufhhBHOsQwYBx7TBPkIeQ96_JTR7exHnaYob72IfZNkzExE3rXY7wkZ64-JLz67Uvy_vS4Wb2w9dvz6-p-zVrJ9chExxUiF2UDDjqnOwPKlGUlgTemQqEVlAXUYJqigla6RleuANSoWmPKmssluZm5-Z-fR0yj3Ydj9PmkFbKUJdeiKLKKz6o2hpQiOjvE_qOOX5aDnUK2c8g2h2ynkK3KHjF7Utb6LcY_8v-mHySIgFM</recordid><startdate>20200401</startdate><enddate>20200401</enddate><creator>Golzani, Mozhgan</creator><creator>Poliki, Mohammad</creator><creator>Haji-Nasiri, Saeed</creator><general>Springer Berlin Heidelberg</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20200401</creationdate><title>The effect of line edge roughness defect on the electronic transport properties of Boron-doped graphene nanoribbon rectifier</title><author>Golzani, Mozhgan ; Poliki, Mohammad ; Haji-Nasiri, Saeed</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c316t-2d14ee128b0f0df6d7047889301b79e2640850a07b590c3fb69f50e6e4c778a13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Applied physics</topic><topic>Boron</topic><topic>Characterization and Evaluation of Materials</topic><topic>Condensed Matter Physics</topic><topic>Density functional theory</topic><topic>Density of states</topic><topic>Doping</topic><topic>Electron transport</topic><topic>Electronic devices</topic><topic>Graphene</topic><topic>Machines</topic><topic>Manufacturing</topic><topic>Materials science</topic><topic>Molecular orbitals</topic><topic>Nanoribbons</topic><topic>Nanotechnology</topic><topic>Optical and Electronic Materials</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Processes</topic><topic>Rectifiers</topic><topic>Roughness</topic><topic>Surfaces and Interfaces</topic><topic>Thin Films</topic><topic>Transfer functions</topic><topic>Transport properties</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Golzani, Mozhgan</creatorcontrib><creatorcontrib>Poliki, Mohammad</creatorcontrib><creatorcontrib>Haji-Nasiri, Saeed</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics. A, Materials science & processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Golzani, Mozhgan</au><au>Poliki, Mohammad</au><au>Haji-Nasiri, Saeed</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The effect of line edge roughness defect on the electronic transport properties of Boron-doped graphene nanoribbon rectifier</atitle><jtitle>Applied physics. A, Materials science & processing</jtitle><stitle>Appl. Phys. A</stitle><date>2020-04-01</date><risdate>2020</risdate><volume>126</volume><issue>4</issue><artnum>296</artnum><issn>0947-8396</issn><eissn>1432-0630</eissn><abstract>A rectifying behavior is achieved by means of boron doping in defected armchair graphene nanoribbon (AGNR). In the proposed AGNR device, the effect of line edge roughness (LER) is investigated on the electronic and transport characteristics. Moreover, the width of AGNR is changed by 6, 7 and 8 atoms in the fixed length, and the position of the boron doping is changed in the center or edge of the left electrode. The electronic features of the devices are analyzed through density function theory and non-equilibrium Green’s function method. The LER defect and any change in the doping position or the width of AGNR affect the energy alignments, molecular orbital levels, transfer functions and density of states (DOS) that lead to a change in the rectifying behavior of the device. Without the LER defect, rectifying ratio at the ribbon width of 7w in the presence of boron doping at the center, and edge is achieved 16 and 5.88, respectively. But interestingly, by considering the LER defect in the same situation these values increase to 362 and 102, respectively.</abstract><cop>Berlin/Heidelberg</cop><pub>Springer Berlin Heidelberg</pub><doi>10.1007/s00339-020-3437-4</doi></addata></record> |
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| source | Springer Nature - Complete Springer Journals |
| subjects | Applied physics Boron Characterization and Evaluation of Materials Condensed Matter Physics Density functional theory Density of states Doping Electron transport Electronic devices Graphene Machines Manufacturing Materials science Molecular orbitals Nanoribbons Nanotechnology Optical and Electronic Materials Physics Physics and Astronomy Processes Rectifiers Roughness Surfaces and Interfaces Thin Films Transfer functions Transport properties |
| title | The effect of line edge roughness defect on the electronic transport properties of Boron-doped graphene nanoribbon rectifier |
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