XAFS study on the boron substituted LiGaO2 semiconductor material

An XAFS study was performed on the electronic and crystal structure properties of LiGa1-xBxO2 (LGO) material in where boron atoms were substituted at the gallium sites. Studies were carried out by the X-ray powder diffraction (XRD) patterns and supported by the Extended-XAFS data. The analysis on th...

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Veröffentlicht in:	Solid state ionics 2020-03, Vol.346, p.115201, Article 115201
Hauptverfasser:	Gundogmus, Hakan, Gunaydin, Selen, Klysubun, Wantana, Ozkendir, Osman Murat
Format:	Artikel
Sprache:	eng
Schlagworte:	Absorption spectroscopy Boron Crystal structure Diffraction patterns Electronic structure Gallium Lithium gallate Materials substitution Oxidation Semiconductor materials Semiconductors Single crystals X ray powder diffraction
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