Effect of Annealing on the Current-Voltage Characteristics of the Ag/GaZnO/FTO Structure
Using the method of electron beam evaporation, the conductive films of gallium doped (1.6 at%) zinc oxide (GZO) were obtained. As the upper and lower electrodes, silver and glass substrates coated with tin oxide doped with fluorine (FTO) were used, respectively. The films were annealed in air at 350...
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Veröffentlicht in: | Journal of contemporary physics 2020, Vol.55 (1), p.38-45 |
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Sprache: | eng |
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