Effect of Annealing on the Current-Voltage Characteristics of the Ag/GaZnO/FTO Structure
Using the method of electron beam evaporation, the conductive films of gallium doped (1.6 at%) zinc oxide (GZO) were obtained. As the upper and lower electrodes, silver and glass substrates coated with tin oxide doped with fluorine (FTO) were used, respectively. The films were annealed in air at 350...
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| Veröffentlicht in: | Journal of contemporary physics 2020, Vol.55 (1), p.38-45 |
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| creator | Aghamalyan, N. R. Papikyan, A. K. Hovsepyan, R. K. Petrosyan, S. I. Badalyan, G. R. Gambaryan, I. A. Kafadaryan, Y. A. |
| description | Using the method of electron beam evaporation, the conductive films of gallium doped (1.6 at%) zinc oxide (GZO) were obtained. As the upper and lower electrodes, silver and glass substrates coated with tin oxide doped with fluorine (FTO) were used, respectively. The films were annealed in air at 350°C for 1 hour. The current-voltage characteristics of the Ag/GZO/FTO structure reveal a linear behavior. Annealing of the entire structure of Ag/GZO/FTO under the same conditions results in a change in the behavior of the current-voltage characteristic from ohmic to the diode with the Schottky barrier. Using the theory of thermionic emission, the methods of Cheung and Norde, the current-voltage characteristics of forward bias are analyzed and the values of ideality factor, the Schottky barrier height, and series resistance are determined. |
| doi_str_mv | 10.3103/S1068337220010065 |
| format | Article |
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R. ; Papikyan, A. K. ; Hovsepyan, R. K. ; Petrosyan, S. I. ; Badalyan, G. R. ; Gambaryan, I. A. ; Kafadaryan, Y. A.</creator><creatorcontrib>Aghamalyan, N. R. ; Papikyan, A. K. ; Hovsepyan, R. K. ; Petrosyan, S. I. ; Badalyan, G. R. ; Gambaryan, I. A. ; Kafadaryan, Y. A.</creatorcontrib><description>Using the method of electron beam evaporation, the conductive films of gallium doped (1.6 at%) zinc oxide (GZO) were obtained. As the upper and lower electrodes, silver and glass substrates coated with tin oxide doped with fluorine (FTO) were used, respectively. The films were annealed in air at 350°C for 1 hour. The current-voltage characteristics of the Ag/GZO/FTO structure reveal a linear behavior. Annealing of the entire structure of Ag/GZO/FTO under the same conditions results in a change in the behavior of the current-voltage characteristic from ohmic to the diode with the Schottky barrier. Using the theory of thermionic emission, the methods of Cheung and Norde, the current-voltage characteristics of forward bias are analyzed and the values of ideality factor, the Schottky barrier height, and series resistance are determined.</description><identifier>ISSN: 1068-3372</identifier><identifier>EISSN: 1934-9378</identifier><identifier>DOI: 10.3103/S1068337220010065</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Annealing ; Coated electrodes ; Current voltage characteristics ; Electron beams ; Fluorine ; Gallium ; Glass substrates ; Particle and Nuclear Physics ; Physics ; Physics and Astronomy ; Silver ; Thermionic emission ; Tin oxides ; Zinc oxide</subject><ispartof>Journal of contemporary physics, 2020, Vol.55 (1), p.38-45</ispartof><rights>Allerton Press, Inc. 2020</rights><rights>2020© Allerton Press, Inc. 2020</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c268t-2c790be6aec13b36b36a99b58825aeb8f736ca574623b8cfd4623c6edcdff49e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.3103/S1068337220010065$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.3103/S1068337220010065$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Aghamalyan, N. R.</creatorcontrib><creatorcontrib>Papikyan, A. K.</creatorcontrib><creatorcontrib>Hovsepyan, R. K.</creatorcontrib><creatorcontrib>Petrosyan, S. I.</creatorcontrib><creatorcontrib>Badalyan, G. R.</creatorcontrib><creatorcontrib>Gambaryan, I. A.</creatorcontrib><creatorcontrib>Kafadaryan, Y. A.</creatorcontrib><title>Effect of Annealing on the Current-Voltage Characteristics of the Ag/GaZnO/FTO Structure</title><title>Journal of contemporary physics</title><addtitle>J. Contemp. Phys</addtitle><description>Using the method of electron beam evaporation, the conductive films of gallium doped (1.6 at%) zinc oxide (GZO) were obtained. As the upper and lower electrodes, silver and glass substrates coated with tin oxide doped with fluorine (FTO) were used, respectively. The films were annealed in air at 350°C for 1 hour. The current-voltage characteristics of the Ag/GZO/FTO structure reveal a linear behavior. Annealing of the entire structure of Ag/GZO/FTO under the same conditions results in a change in the behavior of the current-voltage characteristic from ohmic to the diode with the Schottky barrier. Using the theory of thermionic emission, the methods of Cheung and Norde, the current-voltage characteristics of forward bias are analyzed and the values of ideality factor, the Schottky barrier height, and series resistance are determined.</description><subject>Annealing</subject><subject>Coated electrodes</subject><subject>Current voltage characteristics</subject><subject>Electron beams</subject><subject>Fluorine</subject><subject>Gallium</subject><subject>Glass substrates</subject><subject>Particle and Nuclear Physics</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Silver</subject><subject>Thermionic emission</subject><subject>Tin oxides</subject><subject>Zinc oxide</subject><issn>1068-3372</issn><issn>1934-9378</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp1UM9LwzAUDqLgnP4B3gqe616SNk2PY2xTGOywKeKlpNlL1zHTmaQH_3tTJngQ4cH7Ht-PBx8h9xQeOQU-2VAQkvOCMQAKIPILMqIlz9KSF_Iy4kinA39Nbrw_AOR5ZEfkbW4M6pB0Jplai-rY2ibpbBL2mMx659CG9LU7BtXEe6-c0gFd60Or_eAZZNNmslTvdj1ZbNfJJrheh97hLbky6ujx7mePyctivp09pav18nk2XaWaCRlSposSahQKNeU1F3FUWda5lCxXWEtTcKFVXmSC8VpqsxuAFrjTO2OyEvmYPJxzT6777NGH6tD1zsaXFeOSgcighKiiZ5V2nfcOTXVy7YdyXxWFaiiw-lNg9LCzx0etbdD9Jv9v-gbvynFt</recordid><startdate>2020</startdate><enddate>2020</enddate><creator>Aghamalyan, N. R.</creator><creator>Papikyan, A. K.</creator><creator>Hovsepyan, R. K.</creator><creator>Petrosyan, S. I.</creator><creator>Badalyan, G. R.</creator><creator>Gambaryan, I. A.</creator><creator>Kafadaryan, Y. A.</creator><general>Pleiades Publishing</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>2020</creationdate><title>Effect of Annealing on the Current-Voltage Characteristics of the Ag/GaZnO/FTO Structure</title><author>Aghamalyan, N. R. ; Papikyan, A. K. ; Hovsepyan, R. K. ; Petrosyan, S. I. ; Badalyan, G. R. ; Gambaryan, I. A. ; Kafadaryan, Y. A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c268t-2c790be6aec13b36b36a99b58825aeb8f736ca574623b8cfd4623c6edcdff49e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Annealing</topic><topic>Coated electrodes</topic><topic>Current voltage characteristics</topic><topic>Electron beams</topic><topic>Fluorine</topic><topic>Gallium</topic><topic>Glass substrates</topic><topic>Particle and Nuclear Physics</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Silver</topic><topic>Thermionic emission</topic><topic>Tin oxides</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Aghamalyan, N. R.</creatorcontrib><creatorcontrib>Papikyan, A. K.</creatorcontrib><creatorcontrib>Hovsepyan, R. K.</creatorcontrib><creatorcontrib>Petrosyan, S. I.</creatorcontrib><creatorcontrib>Badalyan, G. R.</creatorcontrib><creatorcontrib>Gambaryan, I. A.</creatorcontrib><creatorcontrib>Kafadaryan, Y. A.</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of contemporary physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Aghamalyan, N. R.</au><au>Papikyan, A. K.</au><au>Hovsepyan, R. K.</au><au>Petrosyan, S. I.</au><au>Badalyan, G. R.</au><au>Gambaryan, I. A.</au><au>Kafadaryan, Y. A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of Annealing on the Current-Voltage Characteristics of the Ag/GaZnO/FTO Structure</atitle><jtitle>Journal of contemporary physics</jtitle><stitle>J. Contemp. Phys</stitle><date>2020</date><risdate>2020</risdate><volume>55</volume><issue>1</issue><spage>38</spage><epage>45</epage><pages>38-45</pages><issn>1068-3372</issn><eissn>1934-9378</eissn><abstract>Using the method of electron beam evaporation, the conductive films of gallium doped (1.6 at%) zinc oxide (GZO) were obtained. As the upper and lower electrodes, silver and glass substrates coated with tin oxide doped with fluorine (FTO) were used, respectively. The films were annealed in air at 350°C for 1 hour. The current-voltage characteristics of the Ag/GZO/FTO structure reveal a linear behavior. Annealing of the entire structure of Ag/GZO/FTO under the same conditions results in a change in the behavior of the current-voltage characteristic from ohmic to the diode with the Schottky barrier. Using the theory of thermionic emission, the methods of Cheung and Norde, the current-voltage characteristics of forward bias are analyzed and the values of ideality factor, the Schottky barrier height, and series resistance are determined.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.3103/S1068337220010065</doi><tpages>8</tpages></addata></record> |
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| subjects | Annealing Coated electrodes Current voltage characteristics Electron beams Fluorine Gallium Glass substrates Particle and Nuclear Physics Physics Physics and Astronomy Silver Thermionic emission Tin oxides Zinc oxide |
| title | Effect of Annealing on the Current-Voltage Characteristics of the Ag/GaZnO/FTO Structure |
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