Effect of Annealing on the Current-Voltage Characteristics of the Ag/GaZnO/FTO Structure

Using the method of electron beam evaporation, the conductive films of gallium doped (1.6 at%) zinc oxide (GZO) were obtained. As the upper and lower electrodes, silver and glass substrates coated with tin oxide doped with fluorine (FTO) were used, respectively. The films were annealed in air at 350°C for 1 hour. The current-voltage characteristics of the Ag/GZO/FTO structure reveal a linear behavior. Annealing of the entire structure of Ag/GZO/FTO under the same conditions results in a change in the behavior of the current-voltage characteristic from ohmic to the diode with the Schottky barrier. Using the theory of thermionic emission, the methods of Cheung and Norde, the current-voltage characteristics of forward bias are analyzed and the values of ideality factor, the Schottky barrier height, and series resistance are determined.