Improved InGaAs and InGaAs/InAlAs Photoconductive Antennas Based on (111)-Oriented Substrates
The terahertz wave generation by spiral photoconductive antennas fabricated on low-temperature In0.5Ga0.5As films and In0.5Ga0.5As/In0.5Al0.5As superlattices is studied by the terahertz time-domain spectroscopy method. The structures were obtained by molecular beam epitaxy on GaAs and InP substrates...
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| Veröffentlicht in: | Electronics (Basel) 2020-03, Vol.9 (3), p.495 |
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| creator | Kuznetsov, Kirill Klochkov, Aleksey Leontyev, Andrey Klimov, Evgeniy Pushkarev, Sergey Galiev, Galib Kitaeva, Galiya |
| description | The terahertz wave generation by spiral photoconductive antennas fabricated on low-temperature In0.5Ga0.5As films and In0.5Ga0.5As/In0.5Al0.5As superlattices is studied by the terahertz time-domain spectroscopy method. The structures were obtained by molecular beam epitaxy on GaAs and InP substrates with surface crystallographic orientations of (100) and (111)A. The pump-probe measurements in the transmission geometry and Hall effect measurements are used to characterize the properties of LT-InGaAs and LT-InGaAs/InAlAs structures. It is found that the terahertz radiation power is almost four times higher for LT-InGaAs samples with the (111)A substrate orientation as compared to (100). Adding of LT-InAlAs layers into the structure with (111)A substrate orientation results in two orders of magnitude increase of the structure resistivity. The possibility of creating LT-InGaAs/InAlAs-based photoconductive antennas with high dark resistance without compensating Be doping is demonstrated. |
| doi_str_mv | 10.3390/electronics9030495 |
| format | Article |
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The structures were obtained by molecular beam epitaxy on GaAs and InP substrates with surface crystallographic orientations of (100) and (111)A. The pump-probe measurements in the transmission geometry and Hall effect measurements are used to characterize the properties of LT-InGaAs and LT-InGaAs/InAlAs structures. It is found that the terahertz radiation power is almost four times higher for LT-InGaAs samples with the (111)A substrate orientation as compared to (100). Adding of LT-InAlAs layers into the structure with (111)A substrate orientation results in two orders of magnitude increase of the structure resistivity. The possibility of creating LT-InGaAs/InAlAs-based photoconductive antennas with high dark resistance without compensating Be doping is demonstrated.</description><identifier>ISSN: 2079-9292</identifier><identifier>EISSN: 2079-9292</identifier><identifier>DOI: 10.3390/electronics9030495</identifier><language>eng</language><publisher>Basel: MDPI AG</publisher><subject>Antennas ; Arsenic ; Crystallography ; Electrodes ; Hall effect ; Indium aluminum arsenides ; Indium gallium arsenides ; Lasers ; Low temperature ; Molecular beam epitaxy ; Point defects ; Sensors ; Substrates ; Superlattices ; Terahertz frequencies ; Time domain analysis ; Wave generation</subject><ispartof>Electronics (Basel), 2020-03, Vol.9 (3), p.495</ispartof><rights>2020. This work is licensed under http://creativecommons.org/licenses/by/3.0/ (the “License”). 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The possibility of creating LT-InGaAs/InAlAs-based photoconductive antennas with high dark resistance without compensating Be doping is demonstrated.</description><subject>Antennas</subject><subject>Arsenic</subject><subject>Crystallography</subject><subject>Electrodes</subject><subject>Hall effect</subject><subject>Indium aluminum arsenides</subject><subject>Indium gallium arsenides</subject><subject>Lasers</subject><subject>Low temperature</subject><subject>Molecular beam epitaxy</subject><subject>Point defects</subject><subject>Sensors</subject><subject>Substrates</subject><subject>Superlattices</subject><subject>Terahertz frequencies</subject><subject>Time domain analysis</subject><subject>Wave generation</subject><issn>2079-9292</issn><issn>2079-9292</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNplUMFKAzEQDaJgqf0BTwte9LA2yTTd5LgWrQuFCupRlmx2Fre0SU2yBf_eSBUE5zKPmTdvZh4hl4zeAig6xS2a6J3tTVAU6EyJEzLitFC54oqf_sHnZBLChqZQDCTQEXmrdnvvDthmlV3qMmTa_sJpZcttqjy9u-iMs-1gYn_ArLQRrdUhu9MhzTmbXTPGbvK17zG12ux5aEL0OmK4IGed3gac_OQxeX24f1k85qv1slqUq9wAUzFvGtmgkM1MM1CtllLOBSBD3RZKzmlRdEICN21DKRecQ6eFmBmtEApDjdAwJldH3fTLx4Ah1hs3eJtW1hwk4-k-oInFjyzjXQgeu3rv-532nzWj9beT9X8n4QvZImhg</recordid><startdate>20200301</startdate><enddate>20200301</enddate><creator>Kuznetsov, Kirill</creator><creator>Klochkov, Aleksey</creator><creator>Leontyev, Andrey</creator><creator>Klimov, Evgeniy</creator><creator>Pushkarev, Sergey</creator><creator>Galiev, Galib</creator><creator>Kitaeva, Galiya</creator><general>MDPI AG</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><orcidid>https://orcid.org/0000-0002-2647-3127</orcidid><orcidid>https://orcid.org/0000-0002-4860-9937</orcidid><orcidid>https://orcid.org/0000-0001-6075-7628</orcidid></search><sort><creationdate>20200301</creationdate><title>Improved InGaAs and InGaAs/InAlAs Photoconductive Antennas Based on (111)-Oriented Substrates</title><author>Kuznetsov, Kirill ; 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The structures were obtained by molecular beam epitaxy on GaAs and InP substrates with surface crystallographic orientations of (100) and (111)A. The pump-probe measurements in the transmission geometry and Hall effect measurements are used to characterize the properties of LT-InGaAs and LT-InGaAs/InAlAs structures. It is found that the terahertz radiation power is almost four times higher for LT-InGaAs samples with the (111)A substrate orientation as compared to (100). Adding of LT-InAlAs layers into the structure with (111)A substrate orientation results in two orders of magnitude increase of the structure resistivity. 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| subjects | Antennas Arsenic Crystallography Electrodes Hall effect Indium aluminum arsenides Indium gallium arsenides Lasers Low temperature Molecular beam epitaxy Point defects Sensors Substrates Superlattices Terahertz frequencies Time domain analysis Wave generation |
| title | Improved InGaAs and InGaAs/InAlAs Photoconductive Antennas Based on (111)-Oriented Substrates |
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