Preparation of high-density Bi2O3 ceramics by low temperature sintering
Bi 2 O 3 ceramics with high density were prepared by low temperature sintering using acetic acid as the co-solvent. The effect of acetic acid concentration, pressure, temperature and holding time during sintering on the densification of Bi 2 O 3 ceramics was investigated. The Bi 2 O 3 ceramic with a...
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Veröffentlicht in: | Journal of materials science. Materials in electronics 2020-04, Vol.31 (7), p.5214-5220 |
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container_title | Journal of materials science. Materials in electronics |
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creator | Song, Jinjie Zhu, Guisheng Xu, Huarui Yin, Rong Zhao, Yunyun Zhang, Xiuyun Yan, Dongliang Long, Shenfeng Wei, Tingting |
description | Bi
2
O
3
ceramics with high density were prepared by low temperature sintering using acetic acid as the co-solvent. The effect of acetic acid concentration, pressure, temperature and holding time during sintering on the densification of Bi
2
O
3
ceramics was investigated. The Bi
2
O
3
ceramic with a relative density of 98.31% was obtained by low temperature sintering at 270 ℃/330 MPa for 140 min using 3 mol/L acetic acid solution. The densification mechanism for low temperature sintering Bi
2
O
3
ceramic followed "dissolution–precipitation–growth", which is different from the densification mechanism of the traditional high-temperature sintered ceramics. The Bi
2
O
3
ceramic with a permittivity (
ε
r
) ~ 32.2, a quality factor (Qf) ~ 16,425 GHz and a grain size ~ 4.2 μm was obtained. The study provides a new method of ceramic development by low temperature sintering. |
doi_str_mv | 10.1007/s10854-020-03081-8 |
format | Article |
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2
O
3
ceramics with high density were prepared by low temperature sintering using acetic acid as the co-solvent. The effect of acetic acid concentration, pressure, temperature and holding time during sintering on the densification of Bi
2
O
3
ceramics was investigated. The Bi
2
O
3
ceramic with a relative density of 98.31% was obtained by low temperature sintering at 270 ℃/330 MPa for 140 min using 3 mol/L acetic acid solution. The densification mechanism for low temperature sintering Bi
2
O
3
ceramic followed "dissolution–precipitation–growth", which is different from the densification mechanism of the traditional high-temperature sintered ceramics. The Bi
2
O
3
ceramic with a permittivity (
ε
r
) ~ 32.2, a quality factor (Qf) ~ 16,425 GHz and a grain size ~ 4.2 μm was obtained. The study provides a new method of ceramic development by low temperature sintering.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-020-03081-8</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Acetic acid ; Bismuth oxides ; Bismuth trioxide ; Ceramics ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Densification ; Density ; Grain size ; High temperature ; Low temperature ; Materials Science ; Optical and Electronic Materials ; Q factors ; Sintering</subject><ispartof>Journal of materials science. Materials in electronics, 2020-04, Vol.31 (7), p.5214-5220</ispartof><rights>Springer Science+Business Media, LLC, part of Springer Nature 2020</rights><rights>Journal of Materials Science: Materials in Electronics is a copyright of Springer, (2020). All Rights Reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-a6ee2a8e5c42f55836e524b126e80ad4b31dd2b136087217e6bb6a5b59002dfa3</citedby><cites>FETCH-LOGICAL-c319t-a6ee2a8e5c42f55836e524b126e80ad4b31dd2b136087217e6bb6a5b59002dfa3</cites><orcidid>0000-0001-7010-8795</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10854-020-03081-8$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10854-020-03081-8$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Song, Jinjie</creatorcontrib><creatorcontrib>Zhu, Guisheng</creatorcontrib><creatorcontrib>Xu, Huarui</creatorcontrib><creatorcontrib>Yin, Rong</creatorcontrib><creatorcontrib>Zhao, Yunyun</creatorcontrib><creatorcontrib>Zhang, Xiuyun</creatorcontrib><creatorcontrib>Yan, Dongliang</creatorcontrib><creatorcontrib>Long, Shenfeng</creatorcontrib><creatorcontrib>Wei, Tingting</creatorcontrib><title>Preparation of high-density Bi2O3 ceramics by low temperature sintering</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>Bi
2
O
3
ceramics with high density were prepared by low temperature sintering using acetic acid as the co-solvent. The effect of acetic acid concentration, pressure, temperature and holding time during sintering on the densification of Bi
2
O
3
ceramics was investigated. The Bi
2
O
3
ceramic with a relative density of 98.31% was obtained by low temperature sintering at 270 ℃/330 MPa for 140 min using 3 mol/L acetic acid solution. The densification mechanism for low temperature sintering Bi
2
O
3
ceramic followed "dissolution–precipitation–growth", which is different from the densification mechanism of the traditional high-temperature sintered ceramics. The Bi
2
O
3
ceramic with a permittivity (
ε
r
) ~ 32.2, a quality factor (Qf) ~ 16,425 GHz and a grain size ~ 4.2 μm was obtained. The study provides a new method of ceramic development by low temperature sintering.</description><subject>Acetic acid</subject><subject>Bismuth oxides</subject><subject>Bismuth trioxide</subject><subject>Ceramics</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Densification</subject><subject>Density</subject><subject>Grain size</subject><subject>High temperature</subject><subject>Low temperature</subject><subject>Materials Science</subject><subject>Optical and Electronic Materials</subject><subject>Q factors</subject><subject>Sintering</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><recordid>eNp9kE1LAzEQhoMoWKt_wFPAc3TyuelRi1ahUA8K3kJ2d7ZN6X6YbJH-e7eu4M3TwPA-7zAPIdccbjlAdpc4WK0YCGAgwXJmT8iE60wyZcXHKZnATGdMaSHOyUVKWwAwStoJWbxG7Hz0fWgb2lZ0E9YbVmKTQn-gD0GsJC0w-joUieYHumu_aI91N6z6fUSaQtNjDM36kpxVfpfw6ndOyfvT49v8mS1Xi5f5_ZIVks965g2i8BZ1oUSltZUGtVA5FwYt-FLlkpelyLk0YDPBMzR5brzO9QxAlJWXU3Iz9nax_dxj6t223cdmOOmEtKCVzIQZUmJMFbFNKWLluhhqHw-OgzsKc6MwNwhzP8KcHSA5Qqk7foTxr_of6hs_MW1k</recordid><startdate>20200401</startdate><enddate>20200401</enddate><creator>Song, Jinjie</creator><creator>Zhu, Guisheng</creator><creator>Xu, Huarui</creator><creator>Yin, Rong</creator><creator>Zhao, Yunyun</creator><creator>Zhang, Xiuyun</creator><creator>Yan, Dongliang</creator><creator>Long, Shenfeng</creator><creator>Wei, Tingting</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>S0W</scope><orcidid>https://orcid.org/0000-0001-7010-8795</orcidid></search><sort><creationdate>20200401</creationdate><title>Preparation of high-density Bi2O3 ceramics by low temperature sintering</title><author>Song, Jinjie ; Zhu, Guisheng ; Xu, Huarui ; Yin, Rong ; Zhao, Yunyun ; Zhang, Xiuyun ; Yan, Dongliang ; Long, Shenfeng ; Wei, Tingting</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-a6ee2a8e5c42f55836e524b126e80ad4b31dd2b136087217e6bb6a5b59002dfa3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Acetic acid</topic><topic>Bismuth oxides</topic><topic>Bismuth trioxide</topic><topic>Ceramics</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Densification</topic><topic>Density</topic><topic>Grain size</topic><topic>High temperature</topic><topic>Low temperature</topic><topic>Materials Science</topic><topic>Optical and Electronic Materials</topic><topic>Q factors</topic><topic>Sintering</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Song, Jinjie</creatorcontrib><creatorcontrib>Zhu, Guisheng</creatorcontrib><creatorcontrib>Xu, Huarui</creatorcontrib><creatorcontrib>Yin, Rong</creatorcontrib><creatorcontrib>Zhao, Yunyun</creatorcontrib><creatorcontrib>Zhang, Xiuyun</creatorcontrib><creatorcontrib>Yan, Dongliang</creatorcontrib><creatorcontrib>Long, Shenfeng</creatorcontrib><creatorcontrib>Wei, Tingting</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>DELNET Engineering & Technology Collection</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Song, Jinjie</au><au>Zhu, Guisheng</au><au>Xu, Huarui</au><au>Yin, Rong</au><au>Zhao, Yunyun</au><au>Zhang, Xiuyun</au><au>Yan, Dongliang</au><au>Long, Shenfeng</au><au>Wei, Tingting</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Preparation of high-density Bi2O3 ceramics by low temperature sintering</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2020-04-01</date><risdate>2020</risdate><volume>31</volume><issue>7</issue><spage>5214</spage><epage>5220</epage><pages>5214-5220</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>Bi
2
O
3
ceramics with high density were prepared by low temperature sintering using acetic acid as the co-solvent. The effect of acetic acid concentration, pressure, temperature and holding time during sintering on the densification of Bi
2
O
3
ceramics was investigated. The Bi
2
O
3
ceramic with a relative density of 98.31% was obtained by low temperature sintering at 270 ℃/330 MPa for 140 min using 3 mol/L acetic acid solution. The densification mechanism for low temperature sintering Bi
2
O
3
ceramic followed "dissolution–precipitation–growth", which is different from the densification mechanism of the traditional high-temperature sintered ceramics. The Bi
2
O
3
ceramic with a permittivity (
ε
r
) ~ 32.2, a quality factor (Qf) ~ 16,425 GHz and a grain size ~ 4.2 μm was obtained. The study provides a new method of ceramic development by low temperature sintering.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-020-03081-8</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0001-7010-8795</orcidid></addata></record> |
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language | eng |
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source | Springer Nature - Complete Springer Journals |
subjects | Acetic acid Bismuth oxides Bismuth trioxide Ceramics Characterization and Evaluation of Materials Chemistry and Materials Science Densification Density Grain size High temperature Low temperature Materials Science Optical and Electronic Materials Q factors Sintering |
title | Preparation of high-density Bi2O3 ceramics by low temperature sintering |
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