Spectral Characteristics and Spatial Distribution of Thermal Donors in n‐Type Czochralski‐Silicon Wafers

In monocrystalline silicon rich in oxygen, thermal donors are formed at temperatures around 450 °C. These are widely accepted to be electrically active oxygen clusters acting as double donors to the conduction band. Exposure to higher temperatures (650 °C) reportedly eliminates them. Herein, a syste...

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