Nonthermal Mechanism of Defect Formation in the CdHgTe Semiconductor on Exposure to Soft X-rays

The effect of irradiation with soft X-rays produced by a laser plasma source equipped with an X-ray concentrator on the properties of the CdHgTe semiconductor are investigated. For this purpose, the mass concentration of atoms in the near-surface layer of the material is measured. It is demonstrated...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Physics of atomic nuclei 2019-12, Vol.82 (11), p.1571-1575
Hauptverfasser:	Ramakoti, R. Sh, Anan’in, O. B., Melekhov, A. P., Gerasimov, I. A., Bogdanov, G. S., Sredin, V. G., Novikov, I. K., Frolova, I. V., Dzhumaev, P. S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Atomic properties Concentrators Epitaxy Interaction of Plasmas Laser plasmas Laser-plasma interactions Mercury cadmium tellurides Particle and Nuclear Physics Particle Beams Photoionization Physics Physics and Astronomy Plasma physics Radiation with Matter Semiconductors Soft x rays Solid solutions Surface defects Surface layers X-rays
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!