Polycrystalline silicon metal-oxide-semiconductor field-effect transistor-based stacked multi-layer one-transistor dynamic random-access memory with double-gate structure for the embedded systems

In this work, a polycrystalline silicon (poly-Si) double-gate metal-oxide-semiconductor field-effect transistor-based stacked multi-layer (ML) one-transistor dynamic random-access memory for the embedded memory is proposed using technology computer-aided simulation. Although poly-Si has advantages o...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2020-04, Vol.59 (SG), p.SGGB01
Hauptverfasser:	Jang, Won Douk, Yoon, Young Jun, Cho, Min Su, Jung, Jun Hyeok, Lee, Sang Ho, Jang, Jaewon, Bae, Jin-Hyuk, Kang, In Man
Format:	Artikel
Sprache:	eng
Schlagworte:	Computer simulation Dynamic random access memory Embedded systems Field effect transistors Grain boundaries High temperature MOSFETs Multilayers Polycrystals Semiconductor devices Silicon Simulation Transistors
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