Three-fold improved set-voltage variability of a Cu atom switch with a split electrode for very-large-scale integration
We propose a self-selected smallest set-voltage cell (4S-cell) to realize three-fold improvement of the set-voltage (Vset) variability of Cu atom switches. In the cell, switches are connected in parallel and the switch with the smallest Vset is automatically selected, resulting in smaller Vset varia...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2020-04, Vol.59 (SG), p.SGGB09 |
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| container_title | Japanese Journal of Applied Physics |
| container_volume | 59 |
| creator | Banno, Naoki Okamoto, Koichiro Numata, Hideaki Iguchi, Noriyuki Miyamura, Makoto Nebashi, Ryusuke Bai, Xu Hada, Hiromitsu Sugibayashi, Tadahiko Sakamoto, Toshitsugu Tada, Munehiro |
| description | We propose a self-selected smallest set-voltage cell (4S-cell) to realize three-fold improvement of the set-voltage (Vset) variability of Cu atom switches. In the cell, switches are connected in parallel and the switch with the smallest Vset is automatically selected, resulting in smaller Vset variability. For practical application, a split-electrode structure is introduced. The 4S-cells of 2-in-1 by using a split electrode without any increase in cell area reduced the 6σ of Vset with an equivalent σVset of 28 mV. The developed 4S-cell enables very-large-scale integration of atom switches for embedded memory and routing switch applications used in ultra-low-power systems-on-chips for wireless sensor node applications. |
| doi_str_mv | 10.7567/1347-4065/ab65ce |
| format | Article |
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In the cell, switches are connected in parallel and the switch with the smallest Vset is automatically selected, resulting in smaller Vset variability. For practical application, a split-electrode structure is introduced. The 4S-cells of 2-in-1 by using a split electrode without any increase in cell area reduced the 6σ of Vset with an equivalent σVset of 28 mV. The developed 4S-cell enables very-large-scale integration of atom switches for embedded memory and routing switch applications used in ultra-low-power systems-on-chips for wireless sensor node applications.</abstract><cop>Tokyo</cop><pub>Japanese Journal of Applied Physics</pub><doi>10.7567/1347-4065/ab65ce</doi></addata></record> |
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| language | eng |
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| source | Institute of Physics Journals |
| subjects | Electric potential Electrodes Parallel connected Switches Very large scale integration Voltage |
| title | Three-fold improved set-voltage variability of a Cu atom switch with a split electrode for very-large-scale integration |
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