Self-powered photodetectors based on β-Ga2O3/4H–SiC heterojunction with ultrahigh current on/off ratio and fast response

Solar-blind photodetectors have received increasing attentions due to their widely applications in military and civil aspects. However, most of the photodetectors often suffer from relatively slow response speeds and high driving voltages. Therefore, it is desirable to develop the self-powered photo...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of alloys and compounds 2020-04, Vol.821, p.153532, Article 153532
Hauptverfasser:	Yu, Jiangang, Dong, Linpeng, Peng, Bo, Yuan, Lei, Huang, Yu, Zhang, Lichun, Zhang, Yuming, Jia, Renxu
Format:	Artikel
Sprache:	eng
Schlagworte:	Electric fields Electron transport Energy bands Gallium oxides Heterojunction photodetectors Heterojunctions Holes (electron deficiencies) Laser deposition Luminous intensity Military applications Photometers Self-powered β-Ga2O3 thin film
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!