High-Speed Nonpolar InGaN/GaN Superluminescent Diode With 2.5 GHz Modulation Bandwidth

We demonstrate a superluminescent diode fabricated on a nonpolar {m} -plane GaN substrate by employing a linearly tapered waveguide design. A high electrical −3dB modulation bandwidth ( f_{\mathbf {3dB}} ) of 2.5 GHz at a current density of 30 kA/cm 2 is achieved. The high modulation bandwidth is a...

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Veröffentlicht in:	IEEE photonics technology letters 2020-04, Vol.32 (7), p.383-386
Hauptverfasser:	Rashidi, Arman, Rishinaramangalam, Ashwin K., Aragon, Andrew A., Mishkat-Ul-Masabih, Saadat, Monavarian, Morteza, Lee, Changmin, Denbaars, Steven P., Feezell, Daniel F.
Format:	Artikel
Sprache:	eng
Schlagworte:	Bandwidth Bandwidths Carrier recombination Current density Diodes ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION ENGINEERING Gallium nitride Gallium nitrides High-speed MATERIALS SCIENCE Modulation nonpolar GaN Optical waveguides Quantum wells Semiconductor lasers solid-state lighting Spontaneous emission Substrates suoperluminescent diode Superluminescent diodes visible-light-communication
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