Formation of Au Nanoparticles and Features of Etching of a Si Substrate under Irradiation with Atomic and Molecular Ions
The formation of nanoparticles under the irradiation of a thin metallic gold film by accelerated atomic and molecular ions is demonstrated. The obtained structures are used to form porous silicon by the metal-assisted chemical etching. The size of the gold nanoparticles and structure of porous silic...
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Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2020, Vol.54 (1), p.137-143 |
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creator | Tuzhilkin, M. S. Bespalova, P. G. Mishin, M. V. Kolesnikov, I. E. Karabeshkin, K. V. Karaseov, P. A. Titov, A. I. |
description | The formation of nanoparticles under the irradiation of a thin metallic gold film by accelerated atomic and molecular ions is demonstrated. The obtained structures are used to form porous silicon by the metal-assisted chemical etching. The size of the gold nanoparticles and structure of porous silicon greatly depend on the type of incident particles and their fluence. A local increase in the density of energy released at the target surface under molecular ion bombardment significantly reduces the doses required to form the desired film morphologies and spread of nanoparticles over the surface and simultaneously makes a weaker radiative impact on the substrate. The shape of the fluorescence and fluorescence-excitation spectra of porous silicon obtained from the irradiated structures is independent of the irradiation parameters, but changes with the etching-solution concentration. |
doi_str_mv | 10.1134/S106378262001025X |
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S.</creatorcontrib><creatorcontrib>Bespalova, P. G.</creatorcontrib><creatorcontrib>Mishin, M. V.</creatorcontrib><creatorcontrib>Kolesnikov, I. E.</creatorcontrib><creatorcontrib>Karabeshkin, K. V.</creatorcontrib><creatorcontrib>Karaseov, P. A.</creatorcontrib><creatorcontrib>Titov, A. I.</creatorcontrib><title>Formation of Au Nanoparticles and Features of Etching of a Si Substrate under Irradiation with Atomic and Molecular Ions</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>The formation of nanoparticles under the irradiation of a thin metallic gold film by accelerated atomic and molecular ions is demonstrated. The obtained structures are used to form porous silicon by the metal-assisted chemical etching. The size of the gold nanoparticles and structure of porous silicon greatly depend on the type of incident particles and their fluence. A local increase in the density of energy released at the target surface under molecular ion bombardment significantly reduces the doses required to form the desired film morphologies and spread of nanoparticles over the surface and simultaneously makes a weaker radiative impact on the substrate. The shape of the fluorescence and fluorescence-excitation spectra of porous silicon obtained from the irradiated structures is independent of the irradiation parameters, but changes with the etching-solution concentration.</description><subject>Chemical etching</subject><subject>Dielectric films</subject><subject>Etching</subject><subject>Excitation spectra</subject><subject>Fabrication</subject><subject>Fluence</subject><subject>Fluorescence</subject><subject>Gold</subject><subject>Ion bombardment</subject><subject>Irradiation</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>Molecular ions</subject><subject>Morphology</subject><subject>Nanoparticles</subject><subject>Organic chemistry</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Porous silicon</subject><subject>Silicon</subject><subject>Silicon substrates</subject><subject>Testing of Materials and Structures</subject><subject>Thin films</subject><subject>Treatment</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp1kU1PxCAQhhujievqD_BG4rkrlI-2x81mV038OKwm3pophRXThRVo1H8va008GMOBGeZ5XwYmy84JnhFC2eWaYEHLqhAFxgQX_PkgmxBc41ywsj7cx4Lm-_pxdhLCa4JIxdkk-1g5v4VonEVOo_mA7sG6HfhoZK8CAtuhlYI4-JQkYBnli7GbfQhobdB6aEP0EBUabKc8uvEeOjP6vZv4gubRbY389rlzvZJDD4lyNpxmRxr6oM5-9mn2tFo-Lq7z24erm8X8NpeU85i3HGhLSFu3wKHSdVFxLmqhWy0xQEWkIKnUlbyjSjKlWVWyTkGhWamYkJROs4vRd-fd26BCbF7d4G26siloiTmvOSsSNRupDfSqMVa79CqZVqdS-84qbdL5XJD0vyWjdRKQUSC9C8Er3ey82YL_bAhu9hNp_kwkaYpRExJrN8r_tvK_6AvVl433</recordid><startdate>2020</startdate><enddate>2020</enddate><creator>Tuzhilkin, M. 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S.</creatorcontrib><creatorcontrib>Bespalova, P. G.</creatorcontrib><creatorcontrib>Mishin, M. V.</creatorcontrib><creatorcontrib>Kolesnikov, I. E.</creatorcontrib><creatorcontrib>Karabeshkin, K. V.</creatorcontrib><creatorcontrib>Karaseov, P. A.</creatorcontrib><creatorcontrib>Titov, A. I.</creatorcontrib><collection>CrossRef</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tuzhilkin, M. S.</au><au>Bespalova, P. G.</au><au>Mishin, M. V.</au><au>Kolesnikov, I. E.</au><au>Karabeshkin, K. V.</au><au>Karaseov, P. A.</au><au>Titov, A. 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A local increase in the density of energy released at the target surface under molecular ion bombardment significantly reduces the doses required to form the desired film morphologies and spread of nanoparticles over the surface and simultaneously makes a weaker radiative impact on the substrate. The shape of the fluorescence and fluorescence-excitation spectra of porous silicon obtained from the irradiated structures is independent of the irradiation parameters, but changes with the etching-solution concentration.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S106378262001025X</doi><tpages>7</tpages></addata></record> |
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subjects | Chemical etching Dielectric films Etching Excitation spectra Fabrication Fluence Fluorescence Gold Ion bombardment Irradiation Magnetic Materials Magnetism Molecular ions Morphology Nanoparticles Organic chemistry Physics Physics and Astronomy Porous silicon Silicon Silicon substrates Testing of Materials and Structures Thin films Treatment |
title | Formation of Au Nanoparticles and Features of Etching of a Si Substrate under Irradiation with Atomic and Molecular Ions |
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