Formation of Au Nanoparticles and Features of Etching of a Si Substrate under Irradiation with Atomic and Molecular Ions

The formation of nanoparticles under the irradiation of a thin metallic gold film by accelerated atomic and molecular ions is demonstrated. The obtained structures are used to form porous silicon by the metal-assisted chemical etching. The size of the gold nanoparticles and structure of porous silic...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2020, Vol.54 (1), p.137-143
Hauptverfasser: Tuzhilkin, M. S., Bespalova, P. G., Mishin, M. V., Kolesnikov, I. E., Karabeshkin, K. V., Karaseov, P. A., Titov, A. I.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 143
container_issue 1
container_start_page 137
container_title Semiconductors (Woodbury, N.Y.)
container_volume 54
creator Tuzhilkin, M. S.
Bespalova, P. G.
Mishin, M. V.
Kolesnikov, I. E.
Karabeshkin, K. V.
Karaseov, P. A.
Titov, A. I.
description The formation of nanoparticles under the irradiation of a thin metallic gold film by accelerated atomic and molecular ions is demonstrated. The obtained structures are used to form porous silicon by the metal-assisted chemical etching. The size of the gold nanoparticles and structure of porous silicon greatly depend on the type of incident particles and their fluence. A local increase in the density of energy released at the target surface under molecular ion bombardment significantly reduces the doses required to form the desired film morphologies and spread of nanoparticles over the surface and simultaneously makes a weaker radiative impact on the substrate. The shape of the fluorescence and fluorescence-excitation spectra of porous silicon obtained from the irradiated structures is independent of the irradiation parameters, but changes with the etching-solution concentration.
doi_str_mv 10.1134/S106378262001025X
format Article
fullrecord <record><control><sourceid>gale_proqu</sourceid><recordid>TN_cdi_proquest_journals_2370559542</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><galeid>A616207439</galeid><sourcerecordid>A616207439</sourcerecordid><originalsourceid>FETCH-LOGICAL-c355t-b5a3b11b9ba5a8f92855696fbfc0aa81c619bad75d3ec4ef4874dea2f47e46c33</originalsourceid><addsrcrecordid>eNp1kU1PxCAQhhujievqD_BG4rkrlI-2x81mV038OKwm3pophRXThRVo1H8va008GMOBGeZ5XwYmy84JnhFC2eWaYEHLqhAFxgQX_PkgmxBc41ywsj7cx4Lm-_pxdhLCa4JIxdkk-1g5v4VonEVOo_mA7sG6HfhoZK8CAtuhlYI4-JQkYBnli7GbfQhobdB6aEP0EBUabKc8uvEeOjP6vZv4gubRbY389rlzvZJDD4lyNpxmRxr6oM5-9mn2tFo-Lq7z24erm8X8NpeU85i3HGhLSFu3wKHSdVFxLmqhWy0xQEWkIKnUlbyjSjKlWVWyTkGhWamYkJROs4vRd-fd26BCbF7d4G26siloiTmvOSsSNRupDfSqMVa79CqZVqdS-84qbdL5XJD0vyWjdRKQUSC9C8Er3ey82YL_bAhu9hNp_kwkaYpRExJrN8r_tvK_6AvVl433</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2370559542</pqid></control><display><type>article</type><title>Formation of Au Nanoparticles and Features of Etching of a Si Substrate under Irradiation with Atomic and Molecular Ions</title><source>SpringerNature Journals</source><creator>Tuzhilkin, M. S. ; Bespalova, P. G. ; Mishin, M. V. ; Kolesnikov, I. E. ; Karabeshkin, K. V. ; Karaseov, P. A. ; Titov, A. I.</creator><creatorcontrib>Tuzhilkin, M. S. ; Bespalova, P. G. ; Mishin, M. V. ; Kolesnikov, I. E. ; Karabeshkin, K. V. ; Karaseov, P. A. ; Titov, A. I.</creatorcontrib><description>The formation of nanoparticles under the irradiation of a thin metallic gold film by accelerated atomic and molecular ions is demonstrated. The obtained structures are used to form porous silicon by the metal-assisted chemical etching. The size of the gold nanoparticles and structure of porous silicon greatly depend on the type of incident particles and their fluence. A local increase in the density of energy released at the target surface under molecular ion bombardment significantly reduces the doses required to form the desired film morphologies and spread of nanoparticles over the surface and simultaneously makes a weaker radiative impact on the substrate. The shape of the fluorescence and fluorescence-excitation spectra of porous silicon obtained from the irradiated structures is independent of the irradiation parameters, but changes with the etching-solution concentration.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S106378262001025X</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Chemical etching ; Dielectric films ; Etching ; Excitation spectra ; Fabrication ; Fluence ; Fluorescence ; Gold ; Ion bombardment ; Irradiation ; Magnetic Materials ; Magnetism ; Molecular ions ; Morphology ; Nanoparticles ; Organic chemistry ; Physics ; Physics and Astronomy ; Porous silicon ; Silicon ; Silicon substrates ; Testing of Materials and Structures ; Thin films ; Treatment</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2020, Vol.54 (1), p.137-143</ispartof><rights>Pleiades Publishing, Ltd. 2020</rights><rights>COPYRIGHT 2020 Springer</rights><rights>2020© Pleiades Publishing, Ltd. 2020</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c355t-b5a3b11b9ba5a8f92855696fbfc0aa81c619bad75d3ec4ef4874dea2f47e46c33</citedby><cites>FETCH-LOGICAL-c355t-b5a3b11b9ba5a8f92855696fbfc0aa81c619bad75d3ec4ef4874dea2f47e46c33</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S106378262001025X$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S106378262001025X$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Tuzhilkin, M. S.</creatorcontrib><creatorcontrib>Bespalova, P. G.</creatorcontrib><creatorcontrib>Mishin, M. V.</creatorcontrib><creatorcontrib>Kolesnikov, I. E.</creatorcontrib><creatorcontrib>Karabeshkin, K. V.</creatorcontrib><creatorcontrib>Karaseov, P. A.</creatorcontrib><creatorcontrib>Titov, A. I.</creatorcontrib><title>Formation of Au Nanoparticles and Features of Etching of a Si Substrate under Irradiation with Atomic and Molecular Ions</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>The formation of nanoparticles under the irradiation of a thin metallic gold film by accelerated atomic and molecular ions is demonstrated. The obtained structures are used to form porous silicon by the metal-assisted chemical etching. The size of the gold nanoparticles and structure of porous silicon greatly depend on the type of incident particles and their fluence. A local increase in the density of energy released at the target surface under molecular ion bombardment significantly reduces the doses required to form the desired film morphologies and spread of nanoparticles over the surface and simultaneously makes a weaker radiative impact on the substrate. The shape of the fluorescence and fluorescence-excitation spectra of porous silicon obtained from the irradiated structures is independent of the irradiation parameters, but changes with the etching-solution concentration.</description><subject>Chemical etching</subject><subject>Dielectric films</subject><subject>Etching</subject><subject>Excitation spectra</subject><subject>Fabrication</subject><subject>Fluence</subject><subject>Fluorescence</subject><subject>Gold</subject><subject>Ion bombardment</subject><subject>Irradiation</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>Molecular ions</subject><subject>Morphology</subject><subject>Nanoparticles</subject><subject>Organic chemistry</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Porous silicon</subject><subject>Silicon</subject><subject>Silicon substrates</subject><subject>Testing of Materials and Structures</subject><subject>Thin films</subject><subject>Treatment</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp1kU1PxCAQhhujievqD_BG4rkrlI-2x81mV038OKwm3pophRXThRVo1H8va008GMOBGeZ5XwYmy84JnhFC2eWaYEHLqhAFxgQX_PkgmxBc41ywsj7cx4Lm-_pxdhLCa4JIxdkk-1g5v4VonEVOo_mA7sG6HfhoZK8CAtuhlYI4-JQkYBnli7GbfQhobdB6aEP0EBUabKc8uvEeOjP6vZv4gubRbY389rlzvZJDD4lyNpxmRxr6oM5-9mn2tFo-Lq7z24erm8X8NpeU85i3HGhLSFu3wKHSdVFxLmqhWy0xQEWkIKnUlbyjSjKlWVWyTkGhWamYkJROs4vRd-fd26BCbF7d4G26siloiTmvOSsSNRupDfSqMVa79CqZVqdS-84qbdL5XJD0vyWjdRKQUSC9C8Er3ey82YL_bAhu9hNp_kwkaYpRExJrN8r_tvK_6AvVl433</recordid><startdate>2020</startdate><enddate>2020</enddate><creator>Tuzhilkin, M. S.</creator><creator>Bespalova, P. G.</creator><creator>Mishin, M. V.</creator><creator>Kolesnikov, I. E.</creator><creator>Karabeshkin, K. V.</creator><creator>Karaseov, P. A.</creator><creator>Titov, A. I.</creator><general>Pleiades Publishing</general><general>Springer</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>2020</creationdate><title>Formation of Au Nanoparticles and Features of Etching of a Si Substrate under Irradiation with Atomic and Molecular Ions</title><author>Tuzhilkin, M. S. ; Bespalova, P. G. ; Mishin, M. V. ; Kolesnikov, I. E. ; Karabeshkin, K. V. ; Karaseov, P. A. ; Titov, A. I.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c355t-b5a3b11b9ba5a8f92855696fbfc0aa81c619bad75d3ec4ef4874dea2f47e46c33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Chemical etching</topic><topic>Dielectric films</topic><topic>Etching</topic><topic>Excitation spectra</topic><topic>Fabrication</topic><topic>Fluence</topic><topic>Fluorescence</topic><topic>Gold</topic><topic>Ion bombardment</topic><topic>Irradiation</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>Molecular ions</topic><topic>Morphology</topic><topic>Nanoparticles</topic><topic>Organic chemistry</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Porous silicon</topic><topic>Silicon</topic><topic>Silicon substrates</topic><topic>Testing of Materials and Structures</topic><topic>Thin films</topic><topic>Treatment</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tuzhilkin, M. S.</creatorcontrib><creatorcontrib>Bespalova, P. G.</creatorcontrib><creatorcontrib>Mishin, M. V.</creatorcontrib><creatorcontrib>Kolesnikov, I. E.</creatorcontrib><creatorcontrib>Karabeshkin, K. V.</creatorcontrib><creatorcontrib>Karaseov, P. A.</creatorcontrib><creatorcontrib>Titov, A. I.</creatorcontrib><collection>CrossRef</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tuzhilkin, M. S.</au><au>Bespalova, P. G.</au><au>Mishin, M. V.</au><au>Kolesnikov, I. E.</au><au>Karabeshkin, K. V.</au><au>Karaseov, P. A.</au><au>Titov, A. I.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Formation of Au Nanoparticles and Features of Etching of a Si Substrate under Irradiation with Atomic and Molecular Ions</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2020</date><risdate>2020</risdate><volume>54</volume><issue>1</issue><spage>137</spage><epage>143</epage><pages>137-143</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>The formation of nanoparticles under the irradiation of a thin metallic gold film by accelerated atomic and molecular ions is demonstrated. The obtained structures are used to form porous silicon by the metal-assisted chemical etching. The size of the gold nanoparticles and structure of porous silicon greatly depend on the type of incident particles and their fluence. A local increase in the density of energy released at the target surface under molecular ion bombardment significantly reduces the doses required to form the desired film morphologies and spread of nanoparticles over the surface and simultaneously makes a weaker radiative impact on the substrate. The shape of the fluorescence and fluorescence-excitation spectra of porous silicon obtained from the irradiated structures is independent of the irradiation parameters, but changes with the etching-solution concentration.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S106378262001025X</doi><tpages>7</tpages></addata></record>
fulltext fulltext
identifier ISSN: 1063-7826
ispartof Semiconductors (Woodbury, N.Y.), 2020, Vol.54 (1), p.137-143
issn 1063-7826
1090-6479
language eng
recordid cdi_proquest_journals_2370559542
source SpringerNature Journals
subjects Chemical etching
Dielectric films
Etching
Excitation spectra
Fabrication
Fluence
Fluorescence
Gold
Ion bombardment
Irradiation
Magnetic Materials
Magnetism
Molecular ions
Morphology
Nanoparticles
Organic chemistry
Physics
Physics and Astronomy
Porous silicon
Silicon
Silicon substrates
Testing of Materials and Structures
Thin films
Treatment
title Formation of Au Nanoparticles and Features of Etching of a Si Substrate under Irradiation with Atomic and Molecular Ions
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-02T23%3A54%3A15IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-gale_proqu&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Formation%20of%20Au%20Nanoparticles%20and%20Features%20of%20Etching%20of%20a%20Si%20Substrate%20under%20Irradiation%20with%20Atomic%20and%20Molecular%20Ions&rft.jtitle=Semiconductors%20(Woodbury,%20N.Y.)&rft.au=Tuzhilkin,%20M.%20S.&rft.date=2020&rft.volume=54&rft.issue=1&rft.spage=137&rft.epage=143&rft.pages=137-143&rft.issn=1063-7826&rft.eissn=1090-6479&rft_id=info:doi/10.1134/S106378262001025X&rft_dat=%3Cgale_proqu%3EA616207439%3C/gale_proqu%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2370559542&rft_id=info:pmid/&rft_galeid=A616207439&rfr_iscdi=true