GaN power switches on the rise: Demonstrated benefits and unrealized potentials

As a wide bandgap semiconductor with high breakdown field, GaN is expected to outperform the incumbent Si technology for power switching applications. Advances in GaN epitaxial growth, device technology, and circuit implementations have resulted in high-performing power switches based on the GaN hig...

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Veröffentlicht in:	Applied physics letters 2020-03, Vol.116 (9)
1. Verfasser:	Chu, Rongming
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Circuits Electron mobility Epitaxial growth Gallium nitrides Semiconductor devices Substrates Switches Switching Transistors Wide bandgap semiconductors Wiring
Online-Zugang:	Volltext
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