Two-pulse magnetic field-free switching scheme for perpendicular SOT-MRAM with a symmetric square free layer
A magnetic field-free switching of a symmetric square free layer with perpendicular magnetization by spin–orbit torque is demonstrated based on micromagnetic modeling and numerical simulations. The field-free switching is accomplished by using a two-pulse switching scheme. An appropriate design of t...
Gespeichert in:
Veröffentlicht in: | Physica. B, Condensed matter Condensed matter, 2020-02, Vol.578, p.411743, Article 411743 |
---|---|
Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | 411743 |
container_title | Physica. B, Condensed matter |
container_volume | 578 |
creator | de Orio, R.L. Makarov, A. Goes, W. Ender, J. Fiorentini, S. Sverdlov, V. |
description | A magnetic field-free switching of a symmetric square free layer with perpendicular magnetization by spin–orbit torque is demonstrated based on micromagnetic modeling and numerical simulations. The field-free switching is accomplished by using a two-pulse switching scheme. An appropriate design of the cell structure yields a deterministic and fast switching, about 0.6ns, of the magnetized free layer. It is shown that the switching is robust with respect to fluctuations of the current pulse duration and, furthermore, very robust in case of delays or overlaps between the writing current pulses. |
doi_str_mv | 10.1016/j.physb.2019.411743 |
format | Article |
fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2369317435</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0921452619306453</els_id><sourcerecordid>2369317435</sourcerecordid><originalsourceid>FETCH-LOGICAL-c331t-7139d5c205ce7e5a1066e275fe7baefe2ac54d7e3a75f42aeddbaadeda3bf4153</originalsourceid><addsrcrecordid>eNp9kMlqwzAQhkVpoenyBL0IelZqSV7qQw8hdIOEQJuehSyNYxlvkewGv33luufOZWD4F-ZD6I4GSxrQ-KFcdsXosiULaLoMKU1CfoYW9DHhhFEenaNFkDJKwojFl-jKuTLwQxO6QNX-1JJuqBzgWh4a6I3CuYFKk9wCYHcyvSpMc8BOFVADzluLO7AdNNqooZIWf-72ZPux2mIvLbDEbqxr6K3PccdBWm-Zgio5gr1BF7n0Vbd_-xp9vTzv129ks3t9X682RHFOe5JQnupIsSBSkEAkaRDHwJIohySTkAOTKgp1Alz6W8gkaJ1JqUFLnuUhjfg1up9zO9seB3C9KNvBNr5SMB6nfOIzqfisUrZ1zkIuOmtqaUdBAzFhFaX4xSomrGLG6l1Pswv8A98GrHDKQKNAGwuqF7o1__p_ABjJg-4</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2369317435</pqid></control><display><type>article</type><title>Two-pulse magnetic field-free switching scheme for perpendicular SOT-MRAM with a symmetric square free layer</title><source>Elsevier ScienceDirect Journals Complete</source><creator>de Orio, R.L. ; Makarov, A. ; Goes, W. ; Ender, J. ; Fiorentini, S. ; Sverdlov, V.</creator><creatorcontrib>de Orio, R.L. ; Makarov, A. ; Goes, W. ; Ender, J. ; Fiorentini, S. ; Sverdlov, V.</creatorcontrib><description>A magnetic field-free switching of a symmetric square free layer with perpendicular magnetization by spin–orbit torque is demonstrated based on micromagnetic modeling and numerical simulations. The field-free switching is accomplished by using a two-pulse switching scheme. An appropriate design of the cell structure yields a deterministic and fast switching, about 0.6ns, of the magnetized free layer. It is shown that the switching is robust with respect to fluctuations of the current pulse duration and, furthermore, very robust in case of delays or overlaps between the writing current pulses.</description><identifier>ISSN: 0921-4526</identifier><identifier>EISSN: 1873-2135</identifier><identifier>DOI: 10.1016/j.physb.2019.411743</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Computer simulation ; Current pulses ; Magnetic field-free switching ; Magnetic fields ; Mathematical models ; Numerical analysis ; Perpendicular magnetization ; Pulse duration ; Robustness (mathematics) ; Spin–Orbit Torque MRAM ; Switching ; Two-pulse switching scheme ; Variations</subject><ispartof>Physica. B, Condensed matter, 2020-02, Vol.578, p.411743, Article 411743</ispartof><rights>2019 Elsevier B.V.</rights><rights>Copyright Elsevier BV Feb 1, 2020</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c331t-7139d5c205ce7e5a1066e275fe7baefe2ac54d7e3a75f42aeddbaadeda3bf4153</citedby><cites>FETCH-LOGICAL-c331t-7139d5c205ce7e5a1066e275fe7baefe2ac54d7e3a75f42aeddbaadeda3bf4153</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.physb.2019.411743$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids></links><search><creatorcontrib>de Orio, R.L.</creatorcontrib><creatorcontrib>Makarov, A.</creatorcontrib><creatorcontrib>Goes, W.</creatorcontrib><creatorcontrib>Ender, J.</creatorcontrib><creatorcontrib>Fiorentini, S.</creatorcontrib><creatorcontrib>Sverdlov, V.</creatorcontrib><title>Two-pulse magnetic field-free switching scheme for perpendicular SOT-MRAM with a symmetric square free layer</title><title>Physica. B, Condensed matter</title><description>A magnetic field-free switching of a symmetric square free layer with perpendicular magnetization by spin–orbit torque is demonstrated based on micromagnetic modeling and numerical simulations. The field-free switching is accomplished by using a two-pulse switching scheme. An appropriate design of the cell structure yields a deterministic and fast switching, about 0.6ns, of the magnetized free layer. It is shown that the switching is robust with respect to fluctuations of the current pulse duration and, furthermore, very robust in case of delays or overlaps between the writing current pulses.</description><subject>Computer simulation</subject><subject>Current pulses</subject><subject>Magnetic field-free switching</subject><subject>Magnetic fields</subject><subject>Mathematical models</subject><subject>Numerical analysis</subject><subject>Perpendicular magnetization</subject><subject>Pulse duration</subject><subject>Robustness (mathematics)</subject><subject>Spin–Orbit Torque MRAM</subject><subject>Switching</subject><subject>Two-pulse switching scheme</subject><subject>Variations</subject><issn>0921-4526</issn><issn>1873-2135</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp9kMlqwzAQhkVpoenyBL0IelZqSV7qQw8hdIOEQJuehSyNYxlvkewGv33luufOZWD4F-ZD6I4GSxrQ-KFcdsXosiULaLoMKU1CfoYW9DHhhFEenaNFkDJKwojFl-jKuTLwQxO6QNX-1JJuqBzgWh4a6I3CuYFKk9wCYHcyvSpMc8BOFVADzluLO7AdNNqooZIWf-72ZPux2mIvLbDEbqxr6K3PccdBWm-Zgio5gr1BF7n0Vbd_-xp9vTzv129ks3t9X682RHFOe5JQnupIsSBSkEAkaRDHwJIohySTkAOTKgp1Alz6W8gkaJ1JqUFLnuUhjfg1up9zO9seB3C9KNvBNr5SMB6nfOIzqfisUrZ1zkIuOmtqaUdBAzFhFaX4xSomrGLG6l1Pswv8A98GrHDKQKNAGwuqF7o1__p_ABjJg-4</recordid><startdate>20200201</startdate><enddate>20200201</enddate><creator>de Orio, R.L.</creator><creator>Makarov, A.</creator><creator>Goes, W.</creator><creator>Ender, J.</creator><creator>Fiorentini, S.</creator><creator>Sverdlov, V.</creator><general>Elsevier B.V</general><general>Elsevier BV</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20200201</creationdate><title>Two-pulse magnetic field-free switching scheme for perpendicular SOT-MRAM with a symmetric square free layer</title><author>de Orio, R.L. ; Makarov, A. ; Goes, W. ; Ender, J. ; Fiorentini, S. ; Sverdlov, V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c331t-7139d5c205ce7e5a1066e275fe7baefe2ac54d7e3a75f42aeddbaadeda3bf4153</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Computer simulation</topic><topic>Current pulses</topic><topic>Magnetic field-free switching</topic><topic>Magnetic fields</topic><topic>Mathematical models</topic><topic>Numerical analysis</topic><topic>Perpendicular magnetization</topic><topic>Pulse duration</topic><topic>Robustness (mathematics)</topic><topic>Spin–Orbit Torque MRAM</topic><topic>Switching</topic><topic>Two-pulse switching scheme</topic><topic>Variations</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>de Orio, R.L.</creatorcontrib><creatorcontrib>Makarov, A.</creatorcontrib><creatorcontrib>Goes, W.</creatorcontrib><creatorcontrib>Ender, J.</creatorcontrib><creatorcontrib>Fiorentini, S.</creatorcontrib><creatorcontrib>Sverdlov, V.</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica. B, Condensed matter</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>de Orio, R.L.</au><au>Makarov, A.</au><au>Goes, W.</au><au>Ender, J.</au><au>Fiorentini, S.</au><au>Sverdlov, V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Two-pulse magnetic field-free switching scheme for perpendicular SOT-MRAM with a symmetric square free layer</atitle><jtitle>Physica. B, Condensed matter</jtitle><date>2020-02-01</date><risdate>2020</risdate><volume>578</volume><spage>411743</spage><pages>411743-</pages><artnum>411743</artnum><issn>0921-4526</issn><eissn>1873-2135</eissn><abstract>A magnetic field-free switching of a symmetric square free layer with perpendicular magnetization by spin–orbit torque is demonstrated based on micromagnetic modeling and numerical simulations. The field-free switching is accomplished by using a two-pulse switching scheme. An appropriate design of the cell structure yields a deterministic and fast switching, about 0.6ns, of the magnetized free layer. It is shown that the switching is robust with respect to fluctuations of the current pulse duration and, furthermore, very robust in case of delays or overlaps between the writing current pulses.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.physb.2019.411743</doi></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0921-4526 |
ispartof | Physica. B, Condensed matter, 2020-02, Vol.578, p.411743, Article 411743 |
issn | 0921-4526 1873-2135 |
language | eng |
recordid | cdi_proquest_journals_2369317435 |
source | Elsevier ScienceDirect Journals Complete |
subjects | Computer simulation Current pulses Magnetic field-free switching Magnetic fields Mathematical models Numerical analysis Perpendicular magnetization Pulse duration Robustness (mathematics) Spin–Orbit Torque MRAM Switching Two-pulse switching scheme Variations |
title | Two-pulse magnetic field-free switching scheme for perpendicular SOT-MRAM with a symmetric square free layer |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T02%3A02%3A02IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Two-pulse%20magnetic%20field-free%20switching%20scheme%20for%20perpendicular%20SOT-MRAM%20with%20a%20symmetric%20square%20free%20layer&rft.jtitle=Physica.%20B,%20Condensed%20matter&rft.au=de%20Orio,%20R.L.&rft.date=2020-02-01&rft.volume=578&rft.spage=411743&rft.pages=411743-&rft.artnum=411743&rft.issn=0921-4526&rft.eissn=1873-2135&rft_id=info:doi/10.1016/j.physb.2019.411743&rft_dat=%3Cproquest_cross%3E2369317435%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2369317435&rft_id=info:pmid/&rft_els_id=S0921452619306453&rfr_iscdi=true |