Sensing Performance of Stable TiN Extended-Gate Field-Effect Transistor pH Sensors in a Wide Short Annealing Temperature Range

In this letter, the structural properties and sensing performances of TiN sensing films deposited on a n + -type Si through the reactive DC sputtering method with rapid thermal annealing at a wide temperature range of 200 °C to 800 °C were investigated for extended-gate field-effect transistor (EGFE...

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Veröffentlicht in:	IEEE electron device letters 2020-03, Vol.41 (3), p.489-492
Hauptverfasser:	Wang, Chih-Wei, Pan, Tung-Ming
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Atomic beam spectroscopy Atomic force microscopy Biomembranes Detection Drift rate Extended-gate field-effect transistor (EGFET) Field effect transistors pH sensor Photoelectrons Semiconductor devices Sensitivity Sensors Surface roughness Temperature measurement Temperature sensors Tin TiN sensing film Transistors
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