Improvement of Resistive Switching Characteristics in Zinc Oxide-Based Resistive Random Access Memory by Ammoniation Annealing

In this experiment, the electrical performance of zinc oxide based-resistive random access memory (RRAM) is successfully improved by using annealing in ammonia hydroxide solution at low-temperature and high pressure to complete ammonium-doped ZnO based-RRAM. The results of material analysis indicate...

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Veröffentlicht in:	IEEE electron device letters 2020-03, Vol.41 (3), p.357-360
Hauptverfasser:	Wu, Pei-Yu, Zheng, Hao-Xuan, Shih, Chih-Cheng, Chang, Ting-Chang, Chen, Wei-Jang, Yang, Chih-Cheng, Chen, Wen-Chung, Tai, Mao-Chou, Tan, Yung-Fang, Huang, Hui-Chun, Ma, Xiao-Hua, Hao, Yue, Tsai, Tsung-Ming, Sze, Simon M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Active control Ammonia ammoniation Annealing Endurance II-VI semiconductor materials Ions Low temperature low temperature annealing Oxygen ions Random access memory Resistance random access memory (RRAM) Switches Switching Zinc oxide zinc oxide (ZnO) Zinc oxides
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