Development of SEM/STEM-WDX for highly sensitive detection of light elements

In this study, to detect the light element lithium (Li) and to detect low dosed Boron (B) in the local area at nm order, we developed an analytical electron microscope equipped with an improved serial (S)-type WDX (wavelength dispersive X-ray spectroscopy) system. In detail, to detect Li, we develop...

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Veröffentlicht in:Journal of instrumentation 2018-02, Vol.13 (2), p.P02025-P02025
Hauptverfasser: Anan, Y., Koguchi, M., Kimura, T., Sekiguchi, T.
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container_title Journal of instrumentation
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creator Anan, Y.
Koguchi, M.
Kimura, T.
Sekiguchi, T.
description In this study, to detect the light element lithium (Li) and to detect low dosed Boron (B) in the local area at nm order, we developed an analytical electron microscope equipped with an improved serial (S)-type WDX (wavelength dispersive X-ray spectroscopy) system. In detail, to detect Li, we developed a high-conductivity multi-capillary X-ray (MCX) lens, and a diffractor with a lattice spacing (d) of 15 nm, and with a spacing variation (δ d) of 0.8 nm. Moreover, to detect low dosed light element B, we designed a high-conductivity MCX lens based on the soft X-ray reflectivity in the capillary and calculation. We developed a large-solid-angle MCX lens whose conductivity of the characteristic X-rays of B became 20 times higher than that of an MCX lens with a 30-mm focal length. Our developed analytical electron microscope was applied to a LiAl specimen and a low B-doped Si substrate specimen, and the performance of this analytical electron microscope was evaluated. As a results, this analytical electron microscope could detect the characteristic X-rays of Li with a minimum mass fraction (MMF) of 8.4 atomic % (at. %). The energy resolution was 1 eV at 55 eV. From the results of measuring the line profile of B for the unpatterned B-implantation area on a B-doped Si substrate specimen, the measured line profile data were in good agreement with secondary ion mass spectrometry data up to a depth of 100 nm with a B concentration of 0.05 at. %.
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subjects Atomic properties
Boron
Conductivity
Electron microscopes
Energy resolution
Implantation
Lenses
Light elements
Lithium
Mathematical analysis
Secondary ion mass spectrometry
Silicon substrates
Soft x rays
X-rays
title Development of SEM/STEM-WDX for highly sensitive detection of light elements
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