Improved Electrical Properties of Layer Structured La2Ti1.96V0.04O7 Ceramics
La 2 Ti 1.96 V 0.04 O 7 (LTVO) ceramics with Ti 4+ ions partially substituted by V 5+ ions at B sites show excellent electrical properties. The dopant V 5+ ions do not result in collapse of the cell layered structure, but they lead to the enhanced distortions of BO 6 oxygen octahedrons. Impedance sp...
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| Veröffentlicht in: | Journal of electronic materials 2020-04, Vol.49 (4), p.2584-2595 |
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| creator | Li, Yueyi Lee, Tom Jiang, Laiming Wang, Wenwu Jiao, Zhifeng Liang, Dayun Yan, Xingxu Xu, Mingjie Chen, Qiang Pan, Xiaoqing Zhu, Jianguo |
| description | La
2
Ti
1.96
V
0.04
O
7
(LTVO) ceramics with Ti
4+
ions partially substituted by V
5+
ions at B sites show excellent electrical properties. The dopant V
5+
ions do not result in collapse of the cell layered structure, but they lead to the enhanced distortions of BO
6
oxygen octahedrons. Impedance spectroscopy reveals that a certain number of defects are formed due to the substitution of Ti
4+
ions by V
5+
ions. Meanwhile, the concentration of oxygen vacancies is decreased compared to pure La
2
Ti
2
O
7
(LTO) ceramics. The direct current resistivity of LTVO ceramics obtained from alternating current (AC) impedance fitting at 600°C is 1.3 × 10
6
Ω cm, which is more than five times of that of the pure LTO at the same temperature (2.2 × 10
5
Ω cm). The substitution of Ti
4+
ions by V
5+
ions greatly enhances the piezoelectric coefficient,
d
33
= 4.8 pC/N. Therefore, the doping of V
5+
ions in the B sites of LTO ceramics should be a good choice for enhancing their piezoelectric properties and resistivity at high temperature regimes. |
| doi_str_mv | 10.1007/s11664-020-07945-x |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2363721221</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2363721221</sourcerecordid><originalsourceid>FETCH-LOGICAL-c319t-eef98fa546ead03445e2fdb7648c6d80b4a38ece9c893521e735301b6c7b0c323</originalsourceid><addsrcrecordid>eNp9kE1Lw0AURQdRsFb_gKuA66nvzVeSpZSqhUAFq7gbJpMXSWmbOpNK---NRnDn6m3OvfdxGLtGmCBAehsRjVEcBHBIc6X54YSNUCvJMTNvp2wE0iDXQupzdhHjCgA1ZjhixXyzC-0nVclsTb4LjXfr5Cm0OwpdQzFp66RwRwrJcxf2vtuHniycWDY4yc0rTEAt0mRKwW0aHy_ZWe3Wka5-75i93M-W00deLB7m07uCe4l5x4nqPKudVoZcBVIpTaKuytSozJsqg1I5mZGn3Ge51AIplVoClsanJXgp5JjdDL396x97ip1dtfuw7SetkEamAoXAnhID5UMbY6Da7kKzceFoEey3NTtYs701-2PNHvqQHEKxh7fvFP6q_0l9AbvJboo</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2363721221</pqid></control><display><type>article</type><title>Improved Electrical Properties of Layer Structured La2Ti1.96V0.04O7 Ceramics</title><source>SpringerLink Journals</source><creator>Li, Yueyi ; Lee, Tom ; Jiang, Laiming ; Wang, Wenwu ; Jiao, Zhifeng ; Liang, Dayun ; Yan, Xingxu ; Xu, Mingjie ; Chen, Qiang ; Pan, Xiaoqing ; Zhu, Jianguo</creator><creatorcontrib>Li, Yueyi ; Lee, Tom ; Jiang, Laiming ; Wang, Wenwu ; Jiao, Zhifeng ; Liang, Dayun ; Yan, Xingxu ; Xu, Mingjie ; Chen, Qiang ; Pan, Xiaoqing ; Zhu, Jianguo</creatorcontrib><description>La
2
Ti
1.96
V
0.04
O
7
(LTVO) ceramics with Ti
4+
ions partially substituted by V
5+
ions at B sites show excellent electrical properties. The dopant V
5+
ions do not result in collapse of the cell layered structure, but they lead to the enhanced distortions of BO
6
oxygen octahedrons. Impedance spectroscopy reveals that a certain number of defects are formed due to the substitution of Ti
4+
ions by V
5+
ions. Meanwhile, the concentration of oxygen vacancies is decreased compared to pure La
2
Ti
2
O
7
(LTO) ceramics. The direct current resistivity of LTVO ceramics obtained from alternating current (AC) impedance fitting at 600°C is 1.3 × 10
6
Ω cm, which is more than five times of that of the pure LTO at the same temperature (2.2 × 10
5
Ω cm). The substitution of Ti
4+
ions by V
5+
ions greatly enhances the piezoelectric coefficient,
d
33
= 4.8 pC/N. Therefore, the doping of V
5+
ions in the B sites of LTO ceramics should be a good choice for enhancing their piezoelectric properties and resistivity at high temperature regimes.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-020-07945-x</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Alternating current ; Ceramics ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Direct current ; Electrical properties ; Electrical resistivity ; Electronics and Microelectronics ; High temperature ; Instrumentation ; Materials Science ; Octahedrons ; Optical and Electronic Materials ; Piezoelectricity ; Solid State Physics ; Substitutes</subject><ispartof>Journal of electronic materials, 2020-04, Vol.49 (4), p.2584-2595</ispartof><rights>The Minerals, Metals & Materials Society 2020</rights><rights>Journal of Electronic Materials is a copyright of Springer, (2020). All Rights Reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-eef98fa546ead03445e2fdb7648c6d80b4a38ece9c893521e735301b6c7b0c323</citedby><cites>FETCH-LOGICAL-c319t-eef98fa546ead03445e2fdb7648c6d80b4a38ece9c893521e735301b6c7b0c323</cites><orcidid>0000-0003-3384-0674</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11664-020-07945-x$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11664-020-07945-x$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Li, Yueyi</creatorcontrib><creatorcontrib>Lee, Tom</creatorcontrib><creatorcontrib>Jiang, Laiming</creatorcontrib><creatorcontrib>Wang, Wenwu</creatorcontrib><creatorcontrib>Jiao, Zhifeng</creatorcontrib><creatorcontrib>Liang, Dayun</creatorcontrib><creatorcontrib>Yan, Xingxu</creatorcontrib><creatorcontrib>Xu, Mingjie</creatorcontrib><creatorcontrib>Chen, Qiang</creatorcontrib><creatorcontrib>Pan, Xiaoqing</creatorcontrib><creatorcontrib>Zhu, Jianguo</creatorcontrib><title>Improved Electrical Properties of Layer Structured La2Ti1.96V0.04O7 Ceramics</title><title>Journal of electronic materials</title><addtitle>Journal of Elec Materi</addtitle><description>La
2
Ti
1.96
V
0.04
O
7
(LTVO) ceramics with Ti
4+
ions partially substituted by V
5+
ions at B sites show excellent electrical properties. The dopant V
5+
ions do not result in collapse of the cell layered structure, but they lead to the enhanced distortions of BO
6
oxygen octahedrons. Impedance spectroscopy reveals that a certain number of defects are formed due to the substitution of Ti
4+
ions by V
5+
ions. Meanwhile, the concentration of oxygen vacancies is decreased compared to pure La
2
Ti
2
O
7
(LTO) ceramics. The direct current resistivity of LTVO ceramics obtained from alternating current (AC) impedance fitting at 600°C is 1.3 × 10
6
Ω cm, which is more than five times of that of the pure LTO at the same temperature (2.2 × 10
5
Ω cm). The substitution of Ti
4+
ions by V
5+
ions greatly enhances the piezoelectric coefficient,
d
33
= 4.8 pC/N. Therefore, the doping of V
5+
ions in the B sites of LTO ceramics should be a good choice for enhancing their piezoelectric properties and resistivity at high temperature regimes.</description><subject>Alternating current</subject><subject>Ceramics</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Direct current</subject><subject>Electrical properties</subject><subject>Electrical resistivity</subject><subject>Electronics and Microelectronics</subject><subject>High temperature</subject><subject>Instrumentation</subject><subject>Materials Science</subject><subject>Octahedrons</subject><subject>Optical and Electronic Materials</subject><subject>Piezoelectricity</subject><subject>Solid State Physics</subject><subject>Substitutes</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>8G5</sourceid><sourceid>BENPR</sourceid><sourceid>GUQSH</sourceid><sourceid>M2O</sourceid><recordid>eNp9kE1Lw0AURQdRsFb_gKuA66nvzVeSpZSqhUAFq7gbJpMXSWmbOpNK---NRnDn6m3OvfdxGLtGmCBAehsRjVEcBHBIc6X54YSNUCvJMTNvp2wE0iDXQupzdhHjCgA1ZjhixXyzC-0nVclsTb4LjXfr5Cm0OwpdQzFp66RwRwrJcxf2vtuHniycWDY4yc0rTEAt0mRKwW0aHy_ZWe3Wka5-75i93M-W00deLB7m07uCe4l5x4nqPKudVoZcBVIpTaKuytSozJsqg1I5mZGn3Ge51AIplVoClsanJXgp5JjdDL396x97ip1dtfuw7SetkEamAoXAnhID5UMbY6Da7kKzceFoEey3NTtYs701-2PNHvqQHEKxh7fvFP6q_0l9AbvJboo</recordid><startdate>20200401</startdate><enddate>20200401</enddate><creator>Li, Yueyi</creator><creator>Lee, Tom</creator><creator>Jiang, Laiming</creator><creator>Wang, Wenwu</creator><creator>Jiao, Zhifeng</creator><creator>Liang, Dayun</creator><creator>Yan, Xingxu</creator><creator>Xu, Mingjie</creator><creator>Chen, Qiang</creator><creator>Pan, Xiaoqing</creator><creator>Zhu, Jianguo</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7XB</scope><scope>88I</scope><scope>8AF</scope><scope>8AO</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>8G5</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M2O</scope><scope>M2P</scope><scope>M7S</scope><scope>MBDVC</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>Q9U</scope><scope>S0X</scope><orcidid>https://orcid.org/0000-0003-3384-0674</orcidid></search><sort><creationdate>20200401</creationdate><title>Improved Electrical Properties of Layer Structured La2Ti1.96V0.04O7 Ceramics</title><author>Li, Yueyi ; Lee, Tom ; Jiang, Laiming ; Wang, Wenwu ; Jiao, Zhifeng ; Liang, Dayun ; Yan, Xingxu ; Xu, Mingjie ; Chen, Qiang ; Pan, Xiaoqing ; Zhu, Jianguo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-eef98fa546ead03445e2fdb7648c6d80b4a38ece9c893521e735301b6c7b0c323</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Alternating current</topic><topic>Ceramics</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Direct current</topic><topic>Electrical properties</topic><topic>Electrical resistivity</topic><topic>Electronics and Microelectronics</topic><topic>High temperature</topic><topic>Instrumentation</topic><topic>Materials Science</topic><topic>Octahedrons</topic><topic>Optical and Electronic Materials</topic><topic>Piezoelectricity</topic><topic>Solid State Physics</topic><topic>Substitutes</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Li, Yueyi</creatorcontrib><creatorcontrib>Lee, Tom</creatorcontrib><creatorcontrib>Jiang, Laiming</creatorcontrib><creatorcontrib>Wang, Wenwu</creatorcontrib><creatorcontrib>Jiao, Zhifeng</creatorcontrib><creatorcontrib>Liang, Dayun</creatorcontrib><creatorcontrib>Yan, Xingxu</creatorcontrib><creatorcontrib>Xu, Mingjie</creatorcontrib><creatorcontrib>Chen, Qiang</creatorcontrib><creatorcontrib>Pan, Xiaoqing</creatorcontrib><creatorcontrib>Zhu, Jianguo</creatorcontrib><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>STEM Database</collection><collection>ProQuest Pharma Collection</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Research Library (Alumni Edition)</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>Research Library Prep</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Research Library</collection><collection>Science Database</collection><collection>Engineering Database</collection><collection>Research Library (Corporate)</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>ProQuest Central Basic</collection><collection>SIRS Editorial</collection><jtitle>Journal of electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Li, Yueyi</au><au>Lee, Tom</au><au>Jiang, Laiming</au><au>Wang, Wenwu</au><au>Jiao, Zhifeng</au><au>Liang, Dayun</au><au>Yan, Xingxu</au><au>Xu, Mingjie</au><au>Chen, Qiang</au><au>Pan, Xiaoqing</au><au>Zhu, Jianguo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Improved Electrical Properties of Layer Structured La2Ti1.96V0.04O7 Ceramics</atitle><jtitle>Journal of electronic materials</jtitle><stitle>Journal of Elec Materi</stitle><date>2020-04-01</date><risdate>2020</risdate><volume>49</volume><issue>4</issue><spage>2584</spage><epage>2595</epage><pages>2584-2595</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><abstract>La
2
Ti
1.96
V
0.04
O
7
(LTVO) ceramics with Ti
4+
ions partially substituted by V
5+
ions at B sites show excellent electrical properties. The dopant V
5+
ions do not result in collapse of the cell layered structure, but they lead to the enhanced distortions of BO
6
oxygen octahedrons. Impedance spectroscopy reveals that a certain number of defects are formed due to the substitution of Ti
4+
ions by V
5+
ions. Meanwhile, the concentration of oxygen vacancies is decreased compared to pure La
2
Ti
2
O
7
(LTO) ceramics. The direct current resistivity of LTVO ceramics obtained from alternating current (AC) impedance fitting at 600°C is 1.3 × 10
6
Ω cm, which is more than five times of that of the pure LTO at the same temperature (2.2 × 10
5
Ω cm). The substitution of Ti
4+
ions by V
5+
ions greatly enhances the piezoelectric coefficient,
d
33
= 4.8 pC/N. Therefore, the doping of V
5+
ions in the B sites of LTO ceramics should be a good choice for enhancing their piezoelectric properties and resistivity at high temperature regimes.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s11664-020-07945-x</doi><tpages>12</tpages><orcidid>https://orcid.org/0000-0003-3384-0674</orcidid></addata></record> |
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| language | eng |
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| source | SpringerLink Journals |
| subjects | Alternating current Ceramics Characterization and Evaluation of Materials Chemistry and Materials Science Direct current Electrical properties Electrical resistivity Electronics and Microelectronics High temperature Instrumentation Materials Science Octahedrons Optical and Electronic Materials Piezoelectricity Solid State Physics Substitutes |
| title | Improved Electrical Properties of Layer Structured La2Ti1.96V0.04O7 Ceramics |
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