Mechanism of Diffusion of Carbon and Silicon Monooxides in a Cubic Silicon Carbide Crystal

The main processes that occur during diffusion of gaseous carbon CO and silicon SiO monoxides through a layer of a single-crystal silicon carbide SiC of the cubic polytype are described. This problem arises as a single-crystal SiC layer is grown by the method of matched atomic substitution due to th...

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Veröffentlicht in:Physics of the solid state 2019-12, Vol.61 (12), p.2338-2341
Hauptverfasser: Kukushkin, S. A., Osipov, A. V.
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description The main processes that occur during diffusion of gaseous carbon CO and silicon SiO monoxides through a layer of a single-crystal silicon carbide SiC of the cubic polytype are described. This problem arises as a single-crystal SiC layer is grown by the method of matched atomic substitution due to the chemical reaction of a crystalline silicon substrate with CO gas. The reaction products are an epitaxial SiC layer and SiO gas. CO and SiO molecules are shown to decompose in the SiC crystal into individual atoms. The oxygen atoms diffuse over interstitial sites only in the [110] direction with the activation energy 2.6 eV. The Si and C atoms displace by the vacancy mechanism in the corresponding SiC sublattices with activation energies 3.6  and 3.9 eV, respectively, and only in the [110] direction.
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subjects Activation energy
Atoms
Carbon monoxide
Chemical reactions
Crystal growth
Crystals
Diffusion layers
Epitaxy
Organic chemistry
Oxygen atoms
Physics
Physics and Astronomy
Reaction products
Semiconductors
Silicon
Silicon carbide
Silicon substrates
Single crystals
Solid State Physics
Substitution reactions
title Mechanism of Diffusion of Carbon and Silicon Monooxides in a Cubic Silicon Carbide Crystal
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