Method for Controlling the Polarity of Gallium Nitride Layers in Epitaxial Synthesis of GaN/AlN Heterostructures on Hybrid SiC/Si Substrates

The effect of the inversion of polarity in gallium nitride layers from the N-polar GaN layer to the Ga-polar GaN layer was discovered during the sequential growth of GaN films on hybrid SiC/Si(111) substrates by nitrogen plasma-assisted molecular beam epitaxy and chloride–hydride vapor phase epitaxy...

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