Nanosized Potential Fluctuations in SiOx Synthesized by Plasma-Enhanced Chemical Vapor Deposition

This work was devoted to studying the atomic structure and electron spectrum of a -SiO x : H films created on silicon and glass substrates by means of plasma-enhanced chemical vapor deposition (PECVD). Depending on the conditions of oxygen supply into the reactor, the stoichiometric parameter x of t...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Physics of the solid state 2019-12, Vol.61 (12), p.2560-2568
Hauptverfasser:	Perevalov, T. V., Volodin, V. A., Novikov, Yu. N., Kamaev, G. N., Gritsenko, V. A., Prosvirin, I. P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Amorphous silicon Atomic structure Charge transport Chemical composition Chemical synthesis Chemical vapor deposition Computer simulation Electronic structure Glass substrates Mathematical models Memristors Optics Organic chemistry Parameters Physics Physics and Astronomy Plasma enhanced chemical vapor deposition Quantum chemistry Random access memory Silicon dioxide Silicon substrates Solid State Physics Surface Physics and Thin Films Variation
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!