Characterization of irradiated p-type silicon detectors for TCAD surface radiation damage model validation

In this work we address the effects of surface radiation damage on detectors fabricated on high-resistivity p-type FZ ⟨100⟩ substrates by Hamamatsu Photonics (HPK) and by Infineon Technologies (IFX). Test structures underwent a wide set of measurements before and after X-ray irradiation with doses f...

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Veröffentlicht in:	Journal of instrumentation 2020-01, Vol.15 (1), p.C01029-C01029
Hauptverfasser:	Morozzi, A., Moscatelli, F., Lombardi, G., Bilei, G.M., Hinger, V., Bergauer, T., Passeri, D.
Format:	Artikel
Sprache:	eng
Schlagworte:	Computer simulation Damage assessment Damage detection Defects Design optimization Detectors Diodes Numerical models Photonics Radiation damage Radiation effects Sensors Silicon dioxide Substrates X ray irradiation
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