The Monopix chips: depleted monolithic active pixel sensors with a column-drain read-out architecture for the ATLAS Inner Tracker upgrade
Two different depleted monolithic CMOS active pixel sensor (DMAPS) prototypes with a fully synchronous column-drain read-out architecture were designed and tested: LF-Monopix and TJ-Monopix. These chips are part of a R&D effort towards a suitable implementation of a CMOS DMAPS for the HL-LHC ATL...
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creator | Caicedo, I. Barbero, M. Barrillon, P. Berdalovic, I. Bhat, S. Bespin, C. Breugnon, P. Cardella, R. Chen, Z. Degerli, Y. Dingfelder, J. Godiot, S. Guilloux, F. Hirono, T. Hemperek, T. Hügging, F. Krüger, H. Kugathasan, T. Moustakas, K. Pangaud, P. Pernegger, H. Pohl, D.-L. Riedler, P. Rozanov, A. Rymaszewski, P. Schwemling, P. Snoeys, W. Vandenbroucke, M. Wang, T. Wermes, N. |
description | Two different depleted monolithic CMOS active pixel sensor (DMAPS) prototypes with a fully synchronous column-drain read-out architecture were designed and tested: LF-Monopix and TJ-Monopix. These chips are part of a R&D effort towards a suitable implementation of a CMOS DMAPS for the HL-LHC ATLAS Inner Tracker. LF-Monopix was developed using a 150nm CMOS process on a highly resistive substrate (>2 kΩ cm), while TJ-Monopix was fabricated using a modified 180 nm CMOS process with a 1 kΩ cm epi-layer for depletion. The chips differ in their front-end design, biasing scheme, pixel pitch, dimensions of the collecting electrode relative to the pixel size (large and small electrode design, respectively) and the placement of read-out electronics within such electrode. Both chips were operational after thinning down to 100 μm and additional back-side processing in LF-Monopix for total bulk depletion. The results in this work include measurements of their leakage current, noise, threshold dispersion, response to minimum ionizing particles and efficiency in test beam campaigns. In addition, the outcome from measurements after irradiation with neutrons up to a dose of 1×1015neq/cm2 and its implications for future designs are discussed. |
doi_str_mv | 10.1088/1748-0221/14/06/C06006 |
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These chips are part of a R&D effort towards a suitable implementation of a CMOS DMAPS for the HL-LHC ATLAS Inner Tracker. LF-Monopix was developed using a 150nm CMOS process on a highly resistive substrate (>2 kΩ cm), while TJ-Monopix was fabricated using a modified 180 nm CMOS process with a 1 kΩ cm epi-layer for depletion. The chips differ in their front-end design, biasing scheme, pixel pitch, dimensions of the collecting electrode relative to the pixel size (large and small electrode design, respectively) and the placement of read-out electronics within such electrode. Both chips were operational after thinning down to 100 μm and additional back-side processing in LF-Monopix for total bulk depletion. The results in this work include measurements of their leakage current, noise, threshold dispersion, response to minimum ionizing particles and efficiency in test beam campaigns. In addition, the outcome from measurements after irradiation with neutrons up to a dose of 1×1015neq/cm2 and its implications for future designs are discussed.</description><identifier>ISSN: 1748-0221</identifier><identifier>EISSN: 1748-0221</identifier><identifier>DOI: 10.1088/1748-0221/14/06/C06006</identifier><language>eng</language><publisher>Bristol: IOP Publishing</publisher><subject>Active pixel sensors ; Architecture ; CMOS ; Depletion ; Design ; Electrodes ; Instrumentation and Detectors ; Leakage current ; Noise threshold ; Physics ; Pixels ; Substrates</subject><ispartof>JINST, 2019-06, Vol.14 (6), p.C06006-C06006</ispartof><rights>Copyright IOP Publishing Jun 2019</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c454t-b4e70f27dca7bb8d1b0ccd6386d5fa2476909eeed89892ab161ddd3c977ddf813</citedby><cites>FETCH-LOGICAL-c454t-b4e70f27dca7bb8d1b0ccd6386d5fa2476909eeed89892ab161ddd3c977ddf813</cites><orcidid>0000-0002-9919-0486</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttps://hal.science/hal-02065863$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Caicedo, I.</creatorcontrib><creatorcontrib>Barbero, M.</creatorcontrib><creatorcontrib>Barrillon, P.</creatorcontrib><creatorcontrib>Berdalovic, I.</creatorcontrib><creatorcontrib>Bhat, S.</creatorcontrib><creatorcontrib>Bespin, C.</creatorcontrib><creatorcontrib>Breugnon, P.</creatorcontrib><creatorcontrib>Cardella, R.</creatorcontrib><creatorcontrib>Chen, Z.</creatorcontrib><creatorcontrib>Degerli, Y.</creatorcontrib><creatorcontrib>Dingfelder, J.</creatorcontrib><creatorcontrib>Godiot, S.</creatorcontrib><creatorcontrib>Guilloux, F.</creatorcontrib><creatorcontrib>Hirono, T.</creatorcontrib><creatorcontrib>Hemperek, T.</creatorcontrib><creatorcontrib>Hügging, F.</creatorcontrib><creatorcontrib>Krüger, H.</creatorcontrib><creatorcontrib>Kugathasan, T.</creatorcontrib><creatorcontrib>Moustakas, K.</creatorcontrib><creatorcontrib>Pangaud, P.</creatorcontrib><creatorcontrib>Pernegger, H.</creatorcontrib><creatorcontrib>Pohl, D.-L.</creatorcontrib><creatorcontrib>Riedler, P.</creatorcontrib><creatorcontrib>Rozanov, A.</creatorcontrib><creatorcontrib>Rymaszewski, P.</creatorcontrib><creatorcontrib>Schwemling, P.</creatorcontrib><creatorcontrib>Snoeys, W.</creatorcontrib><creatorcontrib>Vandenbroucke, M.</creatorcontrib><creatorcontrib>Wang, T.</creatorcontrib><creatorcontrib>Wermes, N.</creatorcontrib><title>The Monopix chips: depleted monolithic active pixel sensors with a column-drain read-out architecture for the ATLAS Inner Tracker upgrade</title><title>JINST</title><description>Two different depleted monolithic CMOS active pixel sensor (DMAPS) prototypes with a fully synchronous column-drain read-out architecture were designed and tested: LF-Monopix and TJ-Monopix. These chips are part of a R&D effort towards a suitable implementation of a CMOS DMAPS for the HL-LHC ATLAS Inner Tracker. LF-Monopix was developed using a 150nm CMOS process on a highly resistive substrate (>2 kΩ cm), while TJ-Monopix was fabricated using a modified 180 nm CMOS process with a 1 kΩ cm epi-layer for depletion. The chips differ in their front-end design, biasing scheme, pixel pitch, dimensions of the collecting electrode relative to the pixel size (large and small electrode design, respectively) and the placement of read-out electronics within such electrode. Both chips were operational after thinning down to 100 μm and additional back-side processing in LF-Monopix for total bulk depletion. The results in this work include measurements of their leakage current, noise, threshold dispersion, response to minimum ionizing particles and efficiency in test beam campaigns. In addition, the outcome from measurements after irradiation with neutrons up to a dose of 1×1015neq/cm2 and its implications for future designs are discussed.</description><subject>Active pixel sensors</subject><subject>Architecture</subject><subject>CMOS</subject><subject>Depletion</subject><subject>Design</subject><subject>Electrodes</subject><subject>Instrumentation and Detectors</subject><subject>Leakage current</subject><subject>Noise threshold</subject><subject>Physics</subject><subject>Pixels</subject><subject>Substrates</subject><issn>1748-0221</issn><issn>1748-0221</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNpNkc9KxDAQxosoqKuvIAFPHmonbZqm3pbFf7DiwfUc0mTqVrtNTdJVH8G3tmVFPM3wfT--GWai6IzCJQUhElowEUOa0oSyBHiyAA7A96KjP2P_X38YHXv_CpCXOYOj6Hu1RvJgO9s3n0Svm95fEYN9iwEN2Yx624R1o4nSodkiGSlsicfOW-fJx-gRRbRth00XG6eajjhUJrZDIMqNcQF1GByS2joSxknz1XL-RO67Dh1ZOaXfxjr0L04ZPIkOatV6PP2ts-j55nq1uIuXj7f3i_ky1ixnIa4YFlCnhdGqqCphaAVaG54JbvJapazgJZSIaEQpylRVlFNjTKbLojCmFjSbRRe73LVqZe-ajXJf0qpG3s2XctIgBZ4Lnm0n9nzH9s6-D-iDfLWD68b1ZJrlBU9ZnsFI8R2lnfXeYf0XS0FOL5LT9eV0fUmZBC53L8p-ANb6hcU</recordid><startdate>20190605</startdate><enddate>20190605</enddate><creator>Caicedo, I.</creator><creator>Barbero, M.</creator><creator>Barrillon, P.</creator><creator>Berdalovic, I.</creator><creator>Bhat, S.</creator><creator>Bespin, C.</creator><creator>Breugnon, P.</creator><creator>Cardella, R.</creator><creator>Chen, Z.</creator><creator>Degerli, Y.</creator><creator>Dingfelder, J.</creator><creator>Godiot, S.</creator><creator>Guilloux, F.</creator><creator>Hirono, T.</creator><creator>Hemperek, T.</creator><creator>Hügging, F.</creator><creator>Krüger, H.</creator><creator>Kugathasan, T.</creator><creator>Moustakas, K.</creator><creator>Pangaud, P.</creator><creator>Pernegger, H.</creator><creator>Pohl, D.-L.</creator><creator>Riedler, P.</creator><creator>Rozanov, A.</creator><creator>Rymaszewski, P.</creator><creator>Schwemling, P.</creator><creator>Snoeys, W.</creator><creator>Vandenbroucke, M.</creator><creator>Wang, T.</creator><creator>Wermes, N.</creator><general>IOP Publishing</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0002-9919-0486</orcidid></search><sort><creationdate>20190605</creationdate><title>The Monopix chips: depleted monolithic active pixel sensors with a column-drain read-out architecture for the ATLAS Inner Tracker upgrade</title><author>Caicedo, I. ; Barbero, M. ; Barrillon, P. ; Berdalovic, I. ; Bhat, S. ; Bespin, C. ; Breugnon, P. ; Cardella, R. ; Chen, Z. ; Degerli, Y. ; Dingfelder, J. ; Godiot, S. ; Guilloux, F. ; Hirono, T. ; Hemperek, T. ; Hügging, F. ; Krüger, H. ; Kugathasan, T. ; Moustakas, K. ; Pangaud, P. ; Pernegger, H. ; Pohl, D.-L. ; Riedler, P. ; Rozanov, A. ; Rymaszewski, P. ; Schwemling, P. ; Snoeys, W. ; Vandenbroucke, M. ; Wang, T. ; Wermes, N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c454t-b4e70f27dca7bb8d1b0ccd6386d5fa2476909eeed89892ab161ddd3c977ddf813</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Active pixel sensors</topic><topic>Architecture</topic><topic>CMOS</topic><topic>Depletion</topic><topic>Design</topic><topic>Electrodes</topic><topic>Instrumentation and Detectors</topic><topic>Leakage current</topic><topic>Noise threshold</topic><topic>Physics</topic><topic>Pixels</topic><topic>Substrates</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Caicedo, I.</creatorcontrib><creatorcontrib>Barbero, M.</creatorcontrib><creatorcontrib>Barrillon, P.</creatorcontrib><creatorcontrib>Berdalovic, I.</creatorcontrib><creatorcontrib>Bhat, S.</creatorcontrib><creatorcontrib>Bespin, C.</creatorcontrib><creatorcontrib>Breugnon, P.</creatorcontrib><creatorcontrib>Cardella, R.</creatorcontrib><creatorcontrib>Chen, Z.</creatorcontrib><creatorcontrib>Degerli, Y.</creatorcontrib><creatorcontrib>Dingfelder, J.</creatorcontrib><creatorcontrib>Godiot, S.</creatorcontrib><creatorcontrib>Guilloux, F.</creatorcontrib><creatorcontrib>Hirono, T.</creatorcontrib><creatorcontrib>Hemperek, T.</creatorcontrib><creatorcontrib>Hügging, F.</creatorcontrib><creatorcontrib>Krüger, H.</creatorcontrib><creatorcontrib>Kugathasan, T.</creatorcontrib><creatorcontrib>Moustakas, K.</creatorcontrib><creatorcontrib>Pangaud, P.</creatorcontrib><creatorcontrib>Pernegger, H.</creatorcontrib><creatorcontrib>Pohl, D.-L.</creatorcontrib><creatorcontrib>Riedler, P.</creatorcontrib><creatorcontrib>Rozanov, A.</creatorcontrib><creatorcontrib>Rymaszewski, P.</creatorcontrib><creatorcontrib>Schwemling, P.</creatorcontrib><creatorcontrib>Snoeys, W.</creatorcontrib><creatorcontrib>Vandenbroucke, M.</creatorcontrib><creatorcontrib>Wang, T.</creatorcontrib><creatorcontrib>Wermes, N.</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>JINST</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Caicedo, I.</au><au>Barbero, M.</au><au>Barrillon, P.</au><au>Berdalovic, I.</au><au>Bhat, S.</au><au>Bespin, C.</au><au>Breugnon, P.</au><au>Cardella, R.</au><au>Chen, Z.</au><au>Degerli, Y.</au><au>Dingfelder, J.</au><au>Godiot, S.</au><au>Guilloux, F.</au><au>Hirono, T.</au><au>Hemperek, T.</au><au>Hügging, F.</au><au>Krüger, H.</au><au>Kugathasan, T.</au><au>Moustakas, K.</au><au>Pangaud, P.</au><au>Pernegger, H.</au><au>Pohl, D.-L.</au><au>Riedler, P.</au><au>Rozanov, A.</au><au>Rymaszewski, P.</au><au>Schwemling, P.</au><au>Snoeys, W.</au><au>Vandenbroucke, M.</au><au>Wang, T.</au><au>Wermes, N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The Monopix chips: depleted monolithic active pixel sensors with a column-drain read-out architecture for the ATLAS Inner Tracker upgrade</atitle><jtitle>JINST</jtitle><date>2019-06-05</date><risdate>2019</risdate><volume>14</volume><issue>6</issue><spage>C06006</spage><epage>C06006</epage><pages>C06006-C06006</pages><issn>1748-0221</issn><eissn>1748-0221</eissn><abstract>Two different depleted monolithic CMOS active pixel sensor (DMAPS) prototypes with a fully synchronous column-drain read-out architecture were designed and tested: LF-Monopix and TJ-Monopix. These chips are part of a R&D effort towards a suitable implementation of a CMOS DMAPS for the HL-LHC ATLAS Inner Tracker. LF-Monopix was developed using a 150nm CMOS process on a highly resistive substrate (>2 kΩ cm), while TJ-Monopix was fabricated using a modified 180 nm CMOS process with a 1 kΩ cm epi-layer for depletion. The chips differ in their front-end design, biasing scheme, pixel pitch, dimensions of the collecting electrode relative to the pixel size (large and small electrode design, respectively) and the placement of read-out electronics within such electrode. Both chips were operational after thinning down to 100 μm and additional back-side processing in LF-Monopix for total bulk depletion. The results in this work include measurements of their leakage current, noise, threshold dispersion, response to minimum ionizing particles and efficiency in test beam campaigns. In addition, the outcome from measurements after irradiation with neutrons up to a dose of 1×1015neq/cm2 and its implications for future designs are discussed.</abstract><cop>Bristol</cop><pub>IOP Publishing</pub><doi>10.1088/1748-0221/14/06/C06006</doi><orcidid>https://orcid.org/0000-0002-9919-0486</orcidid><oa>free_for_read</oa></addata></record> |
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subjects | Active pixel sensors Architecture CMOS Depletion Design Electrodes Instrumentation and Detectors Leakage current Noise threshold Physics Pixels Substrates |
title | The Monopix chips: depleted monolithic active pixel sensors with a column-drain read-out architecture for the ATLAS Inner Tracker upgrade |
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