Influences of pre-oxidation nitrogen implantation and post-oxidation annealing on channel mobility of 4H-SiC MOSFETs

•Values of μFE for SiC DMODFETs are increased by increasing with the temperature and time for post-oxidation annealing.•SiC DMODFETs with nitrogen implantation in active region achieved higher values of μFE.•Values of IDS increased significantly with more nitrogen implantation energy attributed to t...

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Veröffentlicht in:	Journal of crystal growth 2020-02, Vol.531, p.125338, Article 125338
Hauptverfasser:	Fei, Chenxi, Bai, Song, Wang, Qian, Huang, Runhua, He, Zhiqiang, Liu, Hao, Liu, Qiang
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Annealing A1. Implantation Annealing B1. Channel mobility B1. Oxidation B1. Silicon carbide Implantation Interfacial properties MOSFETs Nitrogen Oxidation Silicon dioxide Threshold voltage
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