Czochralski growth of 4-inch diameter Ce:Gd3Al2Ga3O12 single crystals for scintillator applications
•Ce-doped Gd3Al2Ga3O12 single crystals 4 in. in diameter were grown by the Czochralski technique.•Conditions for crack-free growth were developed.•Consequent crystal growth from the same melt was investigated.•Scintillation properties were measured. Ce-doped Gd3Al2Ga3O12 single crystals 4 in. in dia...
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| Veröffentlicht in: | Journal of crystal growth 2020-02, Vol.531, p.125384, Article 125384 |
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| container_title | Journal of crystal growth |
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| creator | Kochurikhin, Vladimir Kamada, Kei Jin Kim, Kyoung Ivanov, Mikhail Gushchina, Liudmila Shoji, Yasuhiro Yoshino, Masao Yoshikawa, Akira |
| description | •Ce-doped Gd3Al2Ga3O12 single crystals 4 in. in diameter were grown by the Czochralski technique.•Conditions for crack-free growth were developed.•Consequent crystal growth from the same melt was investigated.•Scintillation properties were measured.
Ce-doped Gd3Al2Ga3O12 single crystals 4 in. in diameter were grown by the Czochralski technique. Three main growth problems were identified: formation of Ir particles on the surface of the melt, Ga oxide evaporation and crystal cracking during the cooling stage. These problems were solved by careful selection of the ceramic hot zone, shift of the growth atmosphere from Ar + O2 to N2 + CO2 and application of an original post-growth cooling technique. It was found possible to grow up to five sequential 4-inch crystals from the same melt without any notable decrease in the scintillation properties. The optimal solidification fraction (0.23) was found. Additionally, a 4-inch Mg,Ce co-doped Gd3Al2Ga3O12 crystal was grown under the same conditions. |
| doi_str_mv | 10.1016/j.jcrysgro.2019.125384 |
| format | Article |
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Ce-doped Gd3Al2Ga3O12 single crystals 4 in. in diameter were grown by the Czochralski technique. Three main growth problems were identified: formation of Ir particles on the surface of the melt, Ga oxide evaporation and crystal cracking during the cooling stage. These problems were solved by careful selection of the ceramic hot zone, shift of the growth atmosphere from Ar + O2 to N2 + CO2 and application of an original post-growth cooling technique. It was found possible to grow up to five sequential 4-inch crystals from the same melt without any notable decrease in the scintillation properties. The optimal solidification fraction (0.23) was found. Additionally, a 4-inch Mg,Ce co-doped Gd3Al2Ga3O12 crystal was grown under the same conditions.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2019.125384</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A2. Czochralski method ; A2. Single crystal growth ; B1. Oxides ; B2. Scintillator materials ; Cerium ; Cooling ; Crystal growth ; Czochralski method ; Scintillation counters ; Single crystals ; Solidification</subject><ispartof>Journal of crystal growth, 2020-02, Vol.531, p.125384, Article 125384</ispartof><rights>2019 Elsevier B.V.</rights><rights>Copyright Elsevier BV Feb 1, 2020</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c406t-5251d83bb9e892e7a6ad33de5b3bdc6848e2d6f5a76becbdf1856c0539dd8a453</citedby><cites>FETCH-LOGICAL-c406t-5251d83bb9e892e7a6ad33de5b3bdc6848e2d6f5a76becbdf1856c0539dd8a453</cites><orcidid>0000-0003-3162-6375 ; 0000-0003-2387-2410</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jcrysgro.2019.125384$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids></links><search><creatorcontrib>Kochurikhin, Vladimir</creatorcontrib><creatorcontrib>Kamada, Kei</creatorcontrib><creatorcontrib>Jin Kim, Kyoung</creatorcontrib><creatorcontrib>Ivanov, Mikhail</creatorcontrib><creatorcontrib>Gushchina, Liudmila</creatorcontrib><creatorcontrib>Shoji, Yasuhiro</creatorcontrib><creatorcontrib>Yoshino, Masao</creatorcontrib><creatorcontrib>Yoshikawa, Akira</creatorcontrib><title>Czochralski growth of 4-inch diameter Ce:Gd3Al2Ga3O12 single crystals for scintillator applications</title><title>Journal of crystal growth</title><description>•Ce-doped Gd3Al2Ga3O12 single crystals 4 in. in diameter were grown by the Czochralski technique.•Conditions for crack-free growth were developed.•Consequent crystal growth from the same melt was investigated.•Scintillation properties were measured.
Ce-doped Gd3Al2Ga3O12 single crystals 4 in. in diameter were grown by the Czochralski technique. Three main growth problems were identified: formation of Ir particles on the surface of the melt, Ga oxide evaporation and crystal cracking during the cooling stage. These problems were solved by careful selection of the ceramic hot zone, shift of the growth atmosphere from Ar + O2 to N2 + CO2 and application of an original post-growth cooling technique. It was found possible to grow up to five sequential 4-inch crystals from the same melt without any notable decrease in the scintillation properties. The optimal solidification fraction (0.23) was found. Additionally, a 4-inch Mg,Ce co-doped Gd3Al2Ga3O12 crystal was grown under the same conditions.</description><subject>A2. Czochralski method</subject><subject>A2. Single crystal growth</subject><subject>B1. Oxides</subject><subject>B2. Scintillator materials</subject><subject>Cerium</subject><subject>Cooling</subject><subject>Crystal growth</subject><subject>Czochralski method</subject><subject>Scintillation counters</subject><subject>Single crystals</subject><subject>Solidification</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNqFkEtLAzEUhYMoWB9_QQKup-YxmUldWYpWodCNrkMmudNmnE5qkir115tSXbu5lwvnnMv5ELqhZEwJre66cWfCPq6CHzNCJ2PKBJflCRpRWfNCEMJO0ShPVhBWynN0EWNHSHZSMkJm9u3NOug-vjucI77SGvsWl4UbzBpbpzeQIOAZ3M8tn_ZsrvmSMhzdsOoBH_6m7MWtDzgaNyTX9zrlQ2-3vTM6OT_EK3TWZhFc_-5L9Pb0-Dp7LhbL-ctsuihMSapUCCaolbxpJiAnDGpdacu5BdHwxppKlhKYrVqh66oB09iWSlEZIvjEWqlLwS_R7TF3G_zHDmJSnd-FIb9UjAvB6roULKuqo8oEH2OAVm2D2-iwV5SoA1DVqT-g6gBUHYFm48PRCLnDp4OgcmMYDFgXwCRlvfsv4gfMy4Mm</recordid><startdate>20200201</startdate><enddate>20200201</enddate><creator>Kochurikhin, Vladimir</creator><creator>Kamada, Kei</creator><creator>Jin Kim, Kyoung</creator><creator>Ivanov, Mikhail</creator><creator>Gushchina, Liudmila</creator><creator>Shoji, Yasuhiro</creator><creator>Yoshino, Masao</creator><creator>Yoshikawa, Akira</creator><general>Elsevier B.V</general><general>Elsevier BV</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-3162-6375</orcidid><orcidid>https://orcid.org/0000-0003-2387-2410</orcidid></search><sort><creationdate>20200201</creationdate><title>Czochralski growth of 4-inch diameter Ce:Gd3Al2Ga3O12 single crystals for scintillator applications</title><author>Kochurikhin, Vladimir ; Kamada, Kei ; Jin Kim, Kyoung ; Ivanov, Mikhail ; Gushchina, Liudmila ; Shoji, Yasuhiro ; Yoshino, Masao ; Yoshikawa, Akira</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c406t-5251d83bb9e892e7a6ad33de5b3bdc6848e2d6f5a76becbdf1856c0539dd8a453</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>A2. Czochralski method</topic><topic>A2. Single crystal growth</topic><topic>B1. Oxides</topic><topic>B2. Scintillator materials</topic><topic>Cerium</topic><topic>Cooling</topic><topic>Crystal growth</topic><topic>Czochralski method</topic><topic>Scintillation counters</topic><topic>Single crystals</topic><topic>Solidification</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kochurikhin, Vladimir</creatorcontrib><creatorcontrib>Kamada, Kei</creatorcontrib><creatorcontrib>Jin Kim, Kyoung</creatorcontrib><creatorcontrib>Ivanov, Mikhail</creatorcontrib><creatorcontrib>Gushchina, Liudmila</creatorcontrib><creatorcontrib>Shoji, Yasuhiro</creatorcontrib><creatorcontrib>Yoshino, Masao</creatorcontrib><creatorcontrib>Yoshikawa, Akira</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kochurikhin, Vladimir</au><au>Kamada, Kei</au><au>Jin Kim, Kyoung</au><au>Ivanov, Mikhail</au><au>Gushchina, Liudmila</au><au>Shoji, Yasuhiro</au><au>Yoshino, Masao</au><au>Yoshikawa, Akira</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Czochralski growth of 4-inch diameter Ce:Gd3Al2Ga3O12 single crystals for scintillator applications</atitle><jtitle>Journal of crystal growth</jtitle><date>2020-02-01</date><risdate>2020</risdate><volume>531</volume><spage>125384</spage><pages>125384-</pages><artnum>125384</artnum><issn>0022-0248</issn><eissn>1873-5002</eissn><abstract>•Ce-doped Gd3Al2Ga3O12 single crystals 4 in. in diameter were grown by the Czochralski technique.•Conditions for crack-free growth were developed.•Consequent crystal growth from the same melt was investigated.•Scintillation properties were measured.
Ce-doped Gd3Al2Ga3O12 single crystals 4 in. in diameter were grown by the Czochralski technique. Three main growth problems were identified: formation of Ir particles on the surface of the melt, Ga oxide evaporation and crystal cracking during the cooling stage. These problems were solved by careful selection of the ceramic hot zone, shift of the growth atmosphere from Ar + O2 to N2 + CO2 and application of an original post-growth cooling technique. It was found possible to grow up to five sequential 4-inch crystals from the same melt without any notable decrease in the scintillation properties. The optimal solidification fraction (0.23) was found. Additionally, a 4-inch Mg,Ce co-doped Gd3Al2Ga3O12 crystal was grown under the same conditions.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2019.125384</doi><orcidid>https://orcid.org/0000-0003-3162-6375</orcidid><orcidid>https://orcid.org/0000-0003-2387-2410</orcidid></addata></record> |
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| subjects | A2. Czochralski method A2. Single crystal growth B1. Oxides B2. Scintillator materials Cerium Cooling Crystal growth Czochralski method Scintillation counters Single crystals Solidification |
| title | Czochralski growth of 4-inch diameter Ce:Gd3Al2Ga3O12 single crystals for scintillator applications |
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