Possible universal behavior of magnetoresistance and resistivity isotherms in magnetic materials

In the present communication, we propose a simple phenomenological model in order to describe the magnetic field dependence of negative magnetoresistance (MR) and resistivity isotherms. Our model is founded on the decomposition of MR into two distinct components: low field and high field MR. The model was successfully tested on several magnetic specimens and the evolution of the fitting parameters was discussed in detail. The present model works even for samples showing complicated behavior like charge ordering, magnetic phase separation and training effect. The validity of our proposed model indicates the presence of a universal behavior controlling the evolution of MR and resistivity isotherms as a function of the applied magnetic field. This model allows also the comparison of samples performances for magnetic field sensing and spintronics applications. [Display omitted] •The new phenomenological model is based on the decomposition of magnetoresistance (MR) into two components.•The model works for all studied compounds.•The proposed model suggests a possible universal behavior of magnetic field dependent MR and resistivity.