X-ray photoelectron spectroscopy investigation of the valence band offset at beryllium oxide-diamond interfaces
Owing to a large bandgap, extreme thermal-mechanical properties, and close lattice matching, beryllium oxide (BeO) is an ideal substrate and dielectric material for diamond based electronic devices. In this regard, we have utilized X-ray photoemission spectroscopy (XPS) to determine the valence band...
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| Veröffentlicht in: | Diamond and related materials 2020-01, Vol.101, p.107647, Article 107647 |
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| container_title | Diamond and related materials |
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| creator | Koh, D. Banerjee, S.K. Brockman, J. Kuhn, M. King, Sean W. |
| description | Owing to a large bandgap, extreme thermal-mechanical properties, and close lattice matching, beryllium oxide (BeO) is an ideal substrate and dielectric material for diamond based electronic devices. In this regard, we have utilized X-ray photoemission spectroscopy (XPS) to determine the valence band offset (VBO) between atomic layer deposited (ALD) BeO and nano-crystalline diamond (nc-D). The BeO VBO with nc-D was determined to be 1.8 ± 0.1 eV. Utilizing the reported band gaps for ALD BeO (8.0 eV) and diamond (5.5 eV), the calculated conduction band offset at the BeO/nc-D interface was determined to be 0.7 ± 0.2 eV. The measured BeO/nc-D band offsets are accordingly ideal for high-power, −temperature, −frequency, and nuclear detection device applications based on diamond technology.
[Display omitted]
•The ALD BeO/Diamond valence band offset was determined to be 1.8 ± 0.1 eV.•The ALD BeO/Diamond conduction band offset was determined to be 0.7 ± 0.2 eV.•The ALD BeO/Diamond interface was found to have a Type I band alignment. |
| doi_str_mv | 10.1016/j.diamond.2019.107647 |
| format | Article |
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[Display omitted]
•The ALD BeO/Diamond valence band offset was determined to be 1.8 ± 0.1 eV.•The ALD BeO/Diamond conduction band offset was determined to be 0.7 ± 0.2 eV.•The ALD BeO/Diamond interface was found to have a Type I band alignment.</description><identifier>ISSN: 0925-9635</identifier><identifier>EISSN: 1879-0062</identifier><identifier>DOI: 10.1016/j.diamond.2019.107647</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Atomic layer epitaxy ; Beryllium oxide ; Conduction bands ; Diamond ; Diamonds ; Electronic devices ; Electrons ; Energy gap ; Lattice matching ; Mechanical properties ; Offsets ; Photoelectric emission ; Photoelectrons ; Spectrum analysis ; Substrates ; Valence band ; Valence band offset ; X ray photoelectron spectroscopy ; XPS</subject><ispartof>Diamond and related materials, 2020-01, Vol.101, p.107647, Article 107647</ispartof><rights>2019 Elsevier B.V.</rights><rights>Copyright Elsevier BV Jan 2020</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c337t-21d75bbdcf4a6a2ff5438ac1afd1bfbd9da9fc8b66f1c6159927050fa604a8363</citedby><cites>FETCH-LOGICAL-c337t-21d75bbdcf4a6a2ff5438ac1afd1bfbd9da9fc8b66f1c6159927050fa604a8363</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.diamond.2019.107647$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids></links><search><creatorcontrib>Koh, D.</creatorcontrib><creatorcontrib>Banerjee, S.K.</creatorcontrib><creatorcontrib>Brockman, J.</creatorcontrib><creatorcontrib>Kuhn, M.</creatorcontrib><creatorcontrib>King, Sean W.</creatorcontrib><title>X-ray photoelectron spectroscopy investigation of the valence band offset at beryllium oxide-diamond interfaces</title><title>Diamond and related materials</title><description>Owing to a large bandgap, extreme thermal-mechanical properties, and close lattice matching, beryllium oxide (BeO) is an ideal substrate and dielectric material for diamond based electronic devices. In this regard, we have utilized X-ray photoemission spectroscopy (XPS) to determine the valence band offset (VBO) between atomic layer deposited (ALD) BeO and nano-crystalline diamond (nc-D). The BeO VBO with nc-D was determined to be 1.8 ± 0.1 eV. Utilizing the reported band gaps for ALD BeO (8.0 eV) and diamond (5.5 eV), the calculated conduction band offset at the BeO/nc-D interface was determined to be 0.7 ± 0.2 eV. The measured BeO/nc-D band offsets are accordingly ideal for high-power, −temperature, −frequency, and nuclear detection device applications based on diamond technology.
[Display omitted]
•The ALD BeO/Diamond valence band offset was determined to be 1.8 ± 0.1 eV.•The ALD BeO/Diamond conduction band offset was determined to be 0.7 ± 0.2 eV.•The ALD BeO/Diamond interface was found to have a Type I band alignment.</description><subject>Atomic layer epitaxy</subject><subject>Beryllium oxide</subject><subject>Conduction bands</subject><subject>Diamond</subject><subject>Diamonds</subject><subject>Electronic devices</subject><subject>Electrons</subject><subject>Energy gap</subject><subject>Lattice matching</subject><subject>Mechanical properties</subject><subject>Offsets</subject><subject>Photoelectric emission</subject><subject>Photoelectrons</subject><subject>Spectrum analysis</subject><subject>Substrates</subject><subject>Valence band</subject><subject>Valence band offset</subject><subject>X ray photoelectron spectroscopy</subject><subject>XPS</subject><issn>0925-9635</issn><issn>1879-0062</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNqFkMtKxDAUhoMoOI4-ghBw3TGXNm1WIuINBtwouAtpLk5Kp6lJZrBvb8bO3tU5nMt_zv8BcI3RCiPMbruVdnLrB70iCPNcq1lZn4AFbmpeIMTIKVggTqqCM1qdg4sYO4Qw4SVeAP9ZBDnBceOTN71RKfgBxvEvicqPE3TD3sTkvmRyueUtTBsD97I3gzKwlYPONRtNgjLB1oSp791uC_2P06Y4_pU1kglWKhMvwZmVfTRXx7gEH0-P7w8vxfrt-fXhfl0oSutUEKzrqm21sqVkklhblbSRCkurcWtbzbXkVjUtYxYrhivOSY0qZCVDpWwoo0twM-uOwX_vsgHR-V0Y8klBaBZDrKE8T1XzlMpuYzBWjMFtZZgERuLAVnTi6EEc2IqZbd67m_dMtrB3Joio3AGIdiGjE9q7fxR-AQoXiDc</recordid><startdate>202001</startdate><enddate>202001</enddate><creator>Koh, D.</creator><creator>Banerjee, S.K.</creator><creator>Brockman, J.</creator><creator>Kuhn, M.</creator><creator>King, Sean W.</creator><general>Elsevier B.V</general><general>Elsevier BV</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>202001</creationdate><title>X-ray photoelectron spectroscopy investigation of the valence band offset at beryllium oxide-diamond interfaces</title><author>Koh, D. ; Banerjee, S.K. ; Brockman, J. ; Kuhn, M. ; King, Sean W.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c337t-21d75bbdcf4a6a2ff5438ac1afd1bfbd9da9fc8b66f1c6159927050fa604a8363</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Atomic layer epitaxy</topic><topic>Beryllium oxide</topic><topic>Conduction bands</topic><topic>Diamond</topic><topic>Diamonds</topic><topic>Electronic devices</topic><topic>Electrons</topic><topic>Energy gap</topic><topic>Lattice matching</topic><topic>Mechanical properties</topic><topic>Offsets</topic><topic>Photoelectric emission</topic><topic>Photoelectrons</topic><topic>Spectrum analysis</topic><topic>Substrates</topic><topic>Valence band</topic><topic>Valence band offset</topic><topic>X ray photoelectron spectroscopy</topic><topic>XPS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Koh, D.</creatorcontrib><creatorcontrib>Banerjee, S.K.</creatorcontrib><creatorcontrib>Brockman, J.</creatorcontrib><creatorcontrib>Kuhn, M.</creatorcontrib><creatorcontrib>King, Sean W.</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Diamond and related materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Koh, D.</au><au>Banerjee, S.K.</au><au>Brockman, J.</au><au>Kuhn, M.</au><au>King, Sean W.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>X-ray photoelectron spectroscopy investigation of the valence band offset at beryllium oxide-diamond interfaces</atitle><jtitle>Diamond and related materials</jtitle><date>2020-01</date><risdate>2020</risdate><volume>101</volume><spage>107647</spage><pages>107647-</pages><artnum>107647</artnum><issn>0925-9635</issn><eissn>1879-0062</eissn><abstract>Owing to a large bandgap, extreme thermal-mechanical properties, and close lattice matching, beryllium oxide (BeO) is an ideal substrate and dielectric material for diamond based electronic devices. In this regard, we have utilized X-ray photoemission spectroscopy (XPS) to determine the valence band offset (VBO) between atomic layer deposited (ALD) BeO and nano-crystalline diamond (nc-D). The BeO VBO with nc-D was determined to be 1.8 ± 0.1 eV. Utilizing the reported band gaps for ALD BeO (8.0 eV) and diamond (5.5 eV), the calculated conduction band offset at the BeO/nc-D interface was determined to be 0.7 ± 0.2 eV. The measured BeO/nc-D band offsets are accordingly ideal for high-power, −temperature, −frequency, and nuclear detection device applications based on diamond technology.
[Display omitted]
•The ALD BeO/Diamond valence band offset was determined to be 1.8 ± 0.1 eV.•The ALD BeO/Diamond conduction band offset was determined to be 0.7 ± 0.2 eV.•The ALD BeO/Diamond interface was found to have a Type I band alignment.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.diamond.2019.107647</doi></addata></record> |
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| subjects | Atomic layer epitaxy Beryllium oxide Conduction bands Diamond Diamonds Electronic devices Electrons Energy gap Lattice matching Mechanical properties Offsets Photoelectric emission Photoelectrons Spectrum analysis Substrates Valence band Valence band offset X ray photoelectron spectroscopy XPS |
| title | X-ray photoelectron spectroscopy investigation of the valence band offset at beryllium oxide-diamond interfaces |
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