Evaluation of the heterostructure ITO/BiVO4 under blue monochromatic light irradiation for photoelectrochemical application
In this paper, the semiconductor material BiVO 4 was obtained by an adapted process of solution combustion synthesis, using poly(ethylene glycol) (PEG 6000) as an additional stabilizing agent, and deposited on indium-doped tin oxide (ITO) substrate, by the dip-coating deposition process, to build an...
Gespeichert in:
| Veröffentlicht in: | Journal of materials science. Materials in electronics 2020-02, Vol.31 (4), p.2833-2844 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 2844 |
|---|---|
| container_issue | 4 |
| container_start_page | 2833 |
| container_title | Journal of materials science. Materials in electronics |
| container_volume | 31 |
| creator | da Silva Pelissari, M. R. Scalvi, L. V. A. Neto, V. S. L. Dall’Antonia, L. H. |
| description | In this paper, the semiconductor material BiVO
4
was obtained by an adapted process of solution combustion synthesis, using poly(ethylene glycol) (PEG 6000) as an additional stabilizing agent, and deposited on indium-doped tin oxide (ITO) substrate, by the dip-coating deposition process, to build an ITO/BiVO
4
thin film heterostructure, which can be used as photoanode in photoelectrochemical (PEC) cell. The ITO/BiVO
4
photoanode has its performance evaluated by linear sweep voltammetry (LSV), chronoamperometry, and electrochemical impedance spectroscopy (EIS) techniques, under blue monochromatic light, provided by an InGaN LED source. The LSV curve shows that the photoactivity of the photoanode presents a drastic jump in the current density under illumination and negligible dark current density. Reproducibility of the electrode photoactivity is observed under light-chopped illumination. The decay profile of photocurrent suggests that despite of charge carriers recombination process occurring in the ITO/BiVO
4
electrode, it still presents good photoelectrocatalytic efficiency. Additionally, the long-term current stability indicates that the current density stays stable, without considerable decay, for at least one hour. The steady-state photocurrent density obtained is equal 91 µA cm
− 2
. EIS results showed that under illumination, the charge transfer resistance (
R
ct
) is considerably lower than the dark condition. The PEC performance evaluated for discoloration reaction in rhodamine B (RhB) and methylene blue (MB) shows that the photoelectrochemical system is quite efficient. |
| doi_str_mv | 10.1007/s10854-019-02827-3 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2352075839</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2352075839</sourcerecordid><originalsourceid>FETCH-LOGICAL-c319t-5a61b225d258cb935339a33a76fe5214826ac58a692a01a26fc6a84ed2e589e73</originalsourceid><addsrcrecordid>eNp9kMtOwzAQRS0EEqXwA6wssTb1I06cJVTlIVXqpiB2lutMmlRJHBwHCfHzuASJHauZxTl3NBeha0ZvGaXZYmBUyYRQlhPKFc-IOEEzJjNBEsXfTtGM5jIjieT8HF0Mw4FSmiZCzdDX6sM0owm167ArcagAVxDAuyH40YbRA37ebhb39esmwWNXgMe7ZgTcus7Zyrs2qhY39b4KuPbeFPWUVTqP-8oFBw3Y4CMLbW1Ng03fN3E5QpforDTNAFe_c45eHlbb5RNZbx6fl3drYgXLA5EmZTvOZcGlsrtcSCFyI4TJ0hIkZ_HB1FipTJpzQ5nhaWlToxIoOEiVQybm6GbK7b17H2EI-uBG38WTmgvJaSaVyCPFJ8rG5wcPpe593Rr_qRnVx5L1VLKOJeufkrWIkpikIcLdHvxf9D_WNwxUgZ4</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2352075839</pqid></control><display><type>article</type><title>Evaluation of the heterostructure ITO/BiVO4 under blue monochromatic light irradiation for photoelectrochemical application</title><source>SpringerLink Journals</source><creator>da Silva Pelissari, M. R. ; Scalvi, L. V. A. ; Neto, V. S. L. ; Dall’Antonia, L. H.</creator><creatorcontrib>da Silva Pelissari, M. R. ; Scalvi, L. V. A. ; Neto, V. S. L. ; Dall’Antonia, L. H.</creatorcontrib><description>In this paper, the semiconductor material BiVO
4
was obtained by an adapted process of solution combustion synthesis, using poly(ethylene glycol) (PEG 6000) as an additional stabilizing agent, and deposited on indium-doped tin oxide (ITO) substrate, by the dip-coating deposition process, to build an ITO/BiVO
4
thin film heterostructure, which can be used as photoanode in photoelectrochemical (PEC) cell. The ITO/BiVO
4
photoanode has its performance evaluated by linear sweep voltammetry (LSV), chronoamperometry, and electrochemical impedance spectroscopy (EIS) techniques, under blue monochromatic light, provided by an InGaN LED source. The LSV curve shows that the photoactivity of the photoanode presents a drastic jump in the current density under illumination and negligible dark current density. Reproducibility of the electrode photoactivity is observed under light-chopped illumination. The decay profile of photocurrent suggests that despite of charge carriers recombination process occurring in the ITO/BiVO
4
electrode, it still presents good photoelectrocatalytic efficiency. Additionally, the long-term current stability indicates that the current density stays stable, without considerable decay, for at least one hour. The steady-state photocurrent density obtained is equal 91 µA cm
− 2
. EIS results showed that under illumination, the charge transfer resistance (
R
ct
) is considerably lower than the dark condition. The PEC performance evaluated for discoloration reaction in rhodamine B (RhB) and methylene blue (MB) shows that the photoelectrochemical system is quite efficient.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-019-02827-3</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Acids ; Aqueous solutions ; Bismuth oxides ; Characterization and Evaluation of Materials ; Charge transfer ; Chemistry and Materials Science ; Combustion synthesis ; Current carriers ; Current density ; Dark current ; Decay ; Dip coatings ; Discoloration ; Electrochemical impedance spectroscopy ; Electrodes ; Heterostructures ; Illumination ; Immersion coating ; Indium ; Light emitting diodes ; Materials Science ; Methylene blue ; Nitrates ; Optical and Electronic Materials ; Photoelectric effect ; Photoelectric emission ; Reagents ; Rhodamine ; Semiconductor materials ; Stabilizers (agents) ; Substrates ; Thin films ; Vanadates ; Voltammetry</subject><ispartof>Journal of materials science. Materials in electronics, 2020-02, Vol.31 (4), p.2833-2844</ispartof><rights>Springer Science+Business Media, LLC, part of Springer Nature 2020</rights><rights>Journal of Materials Science: Materials in Electronics is a copyright of Springer, (2020). All Rights Reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-5a61b225d258cb935339a33a76fe5214826ac58a692a01a26fc6a84ed2e589e73</citedby><cites>FETCH-LOGICAL-c319t-5a61b225d258cb935339a33a76fe5214826ac58a692a01a26fc6a84ed2e589e73</cites><orcidid>0000-0003-4112-3202</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10854-019-02827-3$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10854-019-02827-3$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>da Silva Pelissari, M. R.</creatorcontrib><creatorcontrib>Scalvi, L. V. A.</creatorcontrib><creatorcontrib>Neto, V. S. L.</creatorcontrib><creatorcontrib>Dall’Antonia, L. H.</creatorcontrib><title>Evaluation of the heterostructure ITO/BiVO4 under blue monochromatic light irradiation for photoelectrochemical application</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>In this paper, the semiconductor material BiVO
4
was obtained by an adapted process of solution combustion synthesis, using poly(ethylene glycol) (PEG 6000) as an additional stabilizing agent, and deposited on indium-doped tin oxide (ITO) substrate, by the dip-coating deposition process, to build an ITO/BiVO
4
thin film heterostructure, which can be used as photoanode in photoelectrochemical (PEC) cell. The ITO/BiVO
4
photoanode has its performance evaluated by linear sweep voltammetry (LSV), chronoamperometry, and electrochemical impedance spectroscopy (EIS) techniques, under blue monochromatic light, provided by an InGaN LED source. The LSV curve shows that the photoactivity of the photoanode presents a drastic jump in the current density under illumination and negligible dark current density. Reproducibility of the electrode photoactivity is observed under light-chopped illumination. The decay profile of photocurrent suggests that despite of charge carriers recombination process occurring in the ITO/BiVO
4
electrode, it still presents good photoelectrocatalytic efficiency. Additionally, the long-term current stability indicates that the current density stays stable, without considerable decay, for at least one hour. The steady-state photocurrent density obtained is equal 91 µA cm
− 2
. EIS results showed that under illumination, the charge transfer resistance (
R
ct
) is considerably lower than the dark condition. The PEC performance evaluated for discoloration reaction in rhodamine B (RhB) and methylene blue (MB) shows that the photoelectrochemical system is quite efficient.</description><subject>Acids</subject><subject>Aqueous solutions</subject><subject>Bismuth oxides</subject><subject>Characterization and Evaluation of Materials</subject><subject>Charge transfer</subject><subject>Chemistry and Materials Science</subject><subject>Combustion synthesis</subject><subject>Current carriers</subject><subject>Current density</subject><subject>Dark current</subject><subject>Decay</subject><subject>Dip coatings</subject><subject>Discoloration</subject><subject>Electrochemical impedance spectroscopy</subject><subject>Electrodes</subject><subject>Heterostructures</subject><subject>Illumination</subject><subject>Immersion coating</subject><subject>Indium</subject><subject>Light emitting diodes</subject><subject>Materials Science</subject><subject>Methylene blue</subject><subject>Nitrates</subject><subject>Optical and Electronic Materials</subject><subject>Photoelectric effect</subject><subject>Photoelectric emission</subject><subject>Reagents</subject><subject>Rhodamine</subject><subject>Semiconductor materials</subject><subject>Stabilizers (agents)</subject><subject>Substrates</subject><subject>Thin films</subject><subject>Vanadates</subject><subject>Voltammetry</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><recordid>eNp9kMtOwzAQRS0EEqXwA6wssTb1I06cJVTlIVXqpiB2lutMmlRJHBwHCfHzuASJHauZxTl3NBeha0ZvGaXZYmBUyYRQlhPKFc-IOEEzJjNBEsXfTtGM5jIjieT8HF0Mw4FSmiZCzdDX6sM0owm167ArcagAVxDAuyH40YbRA37ebhb39esmwWNXgMe7ZgTcus7Zyrs2qhY39b4KuPbeFPWUVTqP-8oFBw3Y4CMLbW1Ng03fN3E5QpforDTNAFe_c45eHlbb5RNZbx6fl3drYgXLA5EmZTvOZcGlsrtcSCFyI4TJ0hIkZ_HB1FipTJpzQ5nhaWlToxIoOEiVQybm6GbK7b17H2EI-uBG38WTmgvJaSaVyCPFJ8rG5wcPpe593Rr_qRnVx5L1VLKOJeufkrWIkpikIcLdHvxf9D_WNwxUgZ4</recordid><startdate>20200201</startdate><enddate>20200201</enddate><creator>da Silva Pelissari, M. R.</creator><creator>Scalvi, L. V. A.</creator><creator>Neto, V. S. L.</creator><creator>Dall’Antonia, L. H.</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>S0W</scope><orcidid>https://orcid.org/0000-0003-4112-3202</orcidid></search><sort><creationdate>20200201</creationdate><title>Evaluation of the heterostructure ITO/BiVO4 under blue monochromatic light irradiation for photoelectrochemical application</title><author>da Silva Pelissari, M. R. ; Scalvi, L. V. A. ; Neto, V. S. L. ; Dall’Antonia, L. H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-5a61b225d258cb935339a33a76fe5214826ac58a692a01a26fc6a84ed2e589e73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Acids</topic><topic>Aqueous solutions</topic><topic>Bismuth oxides</topic><topic>Characterization and Evaluation of Materials</topic><topic>Charge transfer</topic><topic>Chemistry and Materials Science</topic><topic>Combustion synthesis</topic><topic>Current carriers</topic><topic>Current density</topic><topic>Dark current</topic><topic>Decay</topic><topic>Dip coatings</topic><topic>Discoloration</topic><topic>Electrochemical impedance spectroscopy</topic><topic>Electrodes</topic><topic>Heterostructures</topic><topic>Illumination</topic><topic>Immersion coating</topic><topic>Indium</topic><topic>Light emitting diodes</topic><topic>Materials Science</topic><topic>Methylene blue</topic><topic>Nitrates</topic><topic>Optical and Electronic Materials</topic><topic>Photoelectric effect</topic><topic>Photoelectric emission</topic><topic>Reagents</topic><topic>Rhodamine</topic><topic>Semiconductor materials</topic><topic>Stabilizers (agents)</topic><topic>Substrates</topic><topic>Thin films</topic><topic>Vanadates</topic><topic>Voltammetry</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>da Silva Pelissari, M. R.</creatorcontrib><creatorcontrib>Scalvi, L. V. A.</creatorcontrib><creatorcontrib>Neto, V. S. L.</creatorcontrib><creatorcontrib>Dall’Antonia, L. H.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>DELNET Engineering & Technology Collection</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>da Silva Pelissari, M. R.</au><au>Scalvi, L. V. A.</au><au>Neto, V. S. L.</au><au>Dall’Antonia, L. H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Evaluation of the heterostructure ITO/BiVO4 under blue monochromatic light irradiation for photoelectrochemical application</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2020-02-01</date><risdate>2020</risdate><volume>31</volume><issue>4</issue><spage>2833</spage><epage>2844</epage><pages>2833-2844</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>In this paper, the semiconductor material BiVO
4
was obtained by an adapted process of solution combustion synthesis, using poly(ethylene glycol) (PEG 6000) as an additional stabilizing agent, and deposited on indium-doped tin oxide (ITO) substrate, by the dip-coating deposition process, to build an ITO/BiVO
4
thin film heterostructure, which can be used as photoanode in photoelectrochemical (PEC) cell. The ITO/BiVO
4
photoanode has its performance evaluated by linear sweep voltammetry (LSV), chronoamperometry, and electrochemical impedance spectroscopy (EIS) techniques, under blue monochromatic light, provided by an InGaN LED source. The LSV curve shows that the photoactivity of the photoanode presents a drastic jump in the current density under illumination and negligible dark current density. Reproducibility of the electrode photoactivity is observed under light-chopped illumination. The decay profile of photocurrent suggests that despite of charge carriers recombination process occurring in the ITO/BiVO
4
electrode, it still presents good photoelectrocatalytic efficiency. Additionally, the long-term current stability indicates that the current density stays stable, without considerable decay, for at least one hour. The steady-state photocurrent density obtained is equal 91 µA cm
− 2
. EIS results showed that under illumination, the charge transfer resistance (
R
ct
) is considerably lower than the dark condition. The PEC performance evaluated for discoloration reaction in rhodamine B (RhB) and methylene blue (MB) shows that the photoelectrochemical system is quite efficient.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-019-02827-3</doi><tpages>12</tpages><orcidid>https://orcid.org/0000-0003-4112-3202</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0957-4522 |
| ispartof | Journal of materials science. Materials in electronics, 2020-02, Vol.31 (4), p.2833-2844 |
| issn | 0957-4522 1573-482X |
| language | eng |
| recordid | cdi_proquest_journals_2352075839 |
| source | SpringerLink Journals |
| subjects | Acids Aqueous solutions Bismuth oxides Characterization and Evaluation of Materials Charge transfer Chemistry and Materials Science Combustion synthesis Current carriers Current density Dark current Decay Dip coatings Discoloration Electrochemical impedance spectroscopy Electrodes Heterostructures Illumination Immersion coating Indium Light emitting diodes Materials Science Methylene blue Nitrates Optical and Electronic Materials Photoelectric effect Photoelectric emission Reagents Rhodamine Semiconductor materials Stabilizers (agents) Substrates Thin films Vanadates Voltammetry |
| title | Evaluation of the heterostructure ITO/BiVO4 under blue monochromatic light irradiation for photoelectrochemical application |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-09T04%3A56%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Evaluation%20of%20the%20heterostructure%20ITO/BiVO4%20under%20blue%20monochromatic%20light%20irradiation%20for%20photoelectrochemical%20application&rft.jtitle=Journal%20of%20materials%20science.%20Materials%20in%20electronics&rft.au=da%20Silva%20Pelissari,%20M.%20R.&rft.date=2020-02-01&rft.volume=31&rft.issue=4&rft.spage=2833&rft.epage=2844&rft.pages=2833-2844&rft.issn=0957-4522&rft.eissn=1573-482X&rft_id=info:doi/10.1007/s10854-019-02827-3&rft_dat=%3Cproquest_cross%3E2352075839%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2352075839&rft_id=info:pmid/&rfr_iscdi=true |