Method of electron affinity evaluation for the type-2 InAs/InAs1−xSbx superlattice
The type-2 InAs/InAs 1−x Sb x superlattices on GaAs substrate with GaSb buffer layer were investigated by comparison of theoretical simulations and experimental data. The algorithm for selection of input parameters (binary and ternary materials) for simulations is presented. We proposed the method o...
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| Veröffentlicht in: | Journal of materials science 2020-04, Vol.55 (12), p.5135-5144 |
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| container_title | Journal of materials science |
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| creator | Manyk, Tetiana Murawski, Krzysztof Michalczewski, Krystian Grodecki, Kacper Rutkowski, Jaroslaw Martyniuk, Piotr |
| description | The type-2 InAs/InAs
1−x
Sb
x
superlattices on GaAs substrate with GaSb buffer layer were investigated by comparison of theoretical simulations and experimental data. The algorithm for selection of input parameters (binary and ternary materials) for simulations is presented. We proposed the method of the bandgap energy extraction of the absorption curve. The correct choice of the bulk materials and bowing parameters for the ternary alloys allows to reach good agreement of the experimental data and theoretical approach. One of the key achievements of this work was an electron affinity assessment for the device’s theoretical simulation. The detectivity of the long-/very long-wave InAs/InAs
1−x
Sb
x
superlattice photoconductors at the level of ~ 8 × 10
9
cm Hz
1/2
/W (cutoff wavelength 12 µm) and ~ 9 × 10
8
cm Hz
1/2
/W (cutoff wavelength 18 µm) at a temperature 230 K confirmed the good quality of these materials. |
| doi_str_mv | 10.1007/s10853-020-04347-6 |
| format | Article |
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1−x
Sb
x
superlattices on GaAs substrate with GaSb buffer layer were investigated by comparison of theoretical simulations and experimental data. The algorithm for selection of input parameters (binary and ternary materials) for simulations is presented. We proposed the method of the bandgap energy extraction of the absorption curve. The correct choice of the bulk materials and bowing parameters for the ternary alloys allows to reach good agreement of the experimental data and theoretical approach. One of the key achievements of this work was an electron affinity assessment for the device’s theoretical simulation. The detectivity of the long-/very long-wave InAs/InAs
1−x
Sb
x
superlattice photoconductors at the level of ~ 8 × 10
9
cm Hz
1/2
/W (cutoff wavelength 12 µm) and ~ 9 × 10
8
cm Hz
1/2
/W (cutoff wavelength 18 µm) at a temperature 230 K confirmed the good quality of these materials.</description><identifier>ISSN: 0022-2461</identifier><identifier>EISSN: 1573-4803</identifier><identifier>DOI: 10.1007/s10853-020-04347-6</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Affinity ; Algorithms ; Bowing ; Buffer layers ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Classical Mechanics ; Computer simulation ; Crystallography and Scattering Methods ; Cut off wavelength ; Electron affinity ; Electronic Materials ; Materials Science ; Materials selection ; Parameters ; Photoconductors ; Polymer Sciences ; Solid Mechanics ; Substrates ; Superlattices ; Ternary alloys</subject><ispartof>Journal of materials science, 2020-04, Vol.55 (12), p.5135-5144</ispartof><rights>The Author(s) 2020</rights><rights>This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><rights>Journal of Materials Science is a copyright of Springer, (2020). All Rights Reserved. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c391t-c31dbb58ff0efd00aa8678797dc9d9e57f0be5b7345375d79d0c655e64fa0e873</citedby><cites>FETCH-LOGICAL-c391t-c31dbb58ff0efd00aa8678797dc9d9e57f0be5b7345375d79d0c655e64fa0e873</cites><orcidid>0000-0003-4362-4203 ; 0000-0003-2736-0973 ; 0000-0001-6433-7321 ; 0000-0003-1963-3521 ; 0000-0002-9092-755X ; 0000-0002-4122-6554</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10853-020-04347-6$$EPDF$$P50$$Gspringer$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10853-020-04347-6$$EHTML$$P50$$Gspringer$$Hfree_for_read</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Manyk, Tetiana</creatorcontrib><creatorcontrib>Murawski, Krzysztof</creatorcontrib><creatorcontrib>Michalczewski, Krystian</creatorcontrib><creatorcontrib>Grodecki, Kacper</creatorcontrib><creatorcontrib>Rutkowski, Jaroslaw</creatorcontrib><creatorcontrib>Martyniuk, Piotr</creatorcontrib><title>Method of electron affinity evaluation for the type-2 InAs/InAs1−xSbx superlattice</title><title>Journal of materials science</title><addtitle>J Mater Sci</addtitle><description>The type-2 InAs/InAs
1−x
Sb
x
superlattices on GaAs substrate with GaSb buffer layer were investigated by comparison of theoretical simulations and experimental data. The algorithm for selection of input parameters (binary and ternary materials) for simulations is presented. We proposed the method of the bandgap energy extraction of the absorption curve. The correct choice of the bulk materials and bowing parameters for the ternary alloys allows to reach good agreement of the experimental data and theoretical approach. One of the key achievements of this work was an electron affinity assessment for the device’s theoretical simulation. The detectivity of the long-/very long-wave InAs/InAs
1−x
Sb
x
superlattice photoconductors at the level of ~ 8 × 10
9
cm Hz
1/2
/W (cutoff wavelength 12 µm) and ~ 9 × 10
8
cm Hz
1/2
/W (cutoff wavelength 18 µm) at a temperature 230 K confirmed the good quality of these materials.</description><subject>Affinity</subject><subject>Algorithms</subject><subject>Bowing</subject><subject>Buffer layers</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Classical Mechanics</subject><subject>Computer simulation</subject><subject>Crystallography and Scattering Methods</subject><subject>Cut off wavelength</subject><subject>Electron affinity</subject><subject>Electronic Materials</subject><subject>Materials Science</subject><subject>Materials selection</subject><subject>Parameters</subject><subject>Photoconductors</subject><subject>Polymer Sciences</subject><subject>Solid Mechanics</subject><subject>Substrates</subject><subject>Superlattices</subject><subject>Ternary alloys</subject><issn>0022-2461</issn><issn>1573-4803</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>C6C</sourceid><sourceid>BENPR</sourceid><recordid>eNp9kE1OwzAQRi0EEqVwAVaWWIeO7ThOllXFT6UiFpS15SRjmiokwXZQewPWHJGTEAgSu25mpNH7vpEeIZcMrhmAmnkGqRQRcIggFrGKkiMyYVKJKE5BHJMJAOcRjxN2Ss683wKAVJxNyPoBw6YtaWsp1lgE1zbUWFs1VdhTfDd1b0I13GzraNggDfsOI06XzdzPfgb7-vjcPeU76vsOXW1CqAo8JyfW1B4v_vaUPN_erBf30erxbrmYr6JCZCwMk5V5LlNrAW0JYEyaqFRlqiyyMkOpLOQocyViKZQsVVZCkUiJSWwNYKrElFyNvZ1r33r0QW_b3jXDS82F5KAYF3CYijOWJVkiBoqPVOFa7x1a3bnq1bi9ZqB_HOvRsR4c61_HOhlCYgz5AW5e0P1XH0h9AxFVft4</recordid><startdate>20200401</startdate><enddate>20200401</enddate><creator>Manyk, Tetiana</creator><creator>Murawski, Krzysztof</creator><creator>Michalczewski, Krystian</creator><creator>Grodecki, Kacper</creator><creator>Rutkowski, Jaroslaw</creator><creator>Martyniuk, Piotr</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>C6C</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M7S</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><orcidid>https://orcid.org/0000-0003-4362-4203</orcidid><orcidid>https://orcid.org/0000-0003-2736-0973</orcidid><orcidid>https://orcid.org/0000-0001-6433-7321</orcidid><orcidid>https://orcid.org/0000-0003-1963-3521</orcidid><orcidid>https://orcid.org/0000-0002-9092-755X</orcidid><orcidid>https://orcid.org/0000-0002-4122-6554</orcidid></search><sort><creationdate>20200401</creationdate><title>Method of electron affinity evaluation for the type-2 InAs/InAs1−xSbx superlattice</title><author>Manyk, Tetiana ; Murawski, Krzysztof ; Michalczewski, Krystian ; Grodecki, Kacper ; Rutkowski, Jaroslaw ; Martyniuk, Piotr</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c391t-c31dbb58ff0efd00aa8678797dc9d9e57f0be5b7345375d79d0c655e64fa0e873</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Affinity</topic><topic>Algorithms</topic><topic>Bowing</topic><topic>Buffer layers</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Classical Mechanics</topic><topic>Computer simulation</topic><topic>Crystallography and Scattering Methods</topic><topic>Cut off wavelength</topic><topic>Electron affinity</topic><topic>Electronic Materials</topic><topic>Materials Science</topic><topic>Materials selection</topic><topic>Parameters</topic><topic>Photoconductors</topic><topic>Polymer Sciences</topic><topic>Solid Mechanics</topic><topic>Substrates</topic><topic>Superlattices</topic><topic>Ternary alloys</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Manyk, Tetiana</creatorcontrib><creatorcontrib>Murawski, Krzysztof</creatorcontrib><creatorcontrib>Michalczewski, Krystian</creatorcontrib><creatorcontrib>Grodecki, Kacper</creatorcontrib><creatorcontrib>Rutkowski, Jaroslaw</creatorcontrib><creatorcontrib>Martyniuk, Piotr</creatorcontrib><collection>SpringerOpen</collection><collection>CrossRef</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central</collection><collection>SciTech Premium Collection</collection><collection>https://resources.nclive.org/materials</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering collection</collection><jtitle>Journal of materials science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Manyk, Tetiana</au><au>Murawski, Krzysztof</au><au>Michalczewski, Krystian</au><au>Grodecki, Kacper</au><au>Rutkowski, Jaroslaw</au><au>Martyniuk, Piotr</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Method of electron affinity evaluation for the type-2 InAs/InAs1−xSbx superlattice</atitle><jtitle>Journal of materials science</jtitle><stitle>J Mater Sci</stitle><date>2020-04-01</date><risdate>2020</risdate><volume>55</volume><issue>12</issue><spage>5135</spage><epage>5144</epage><pages>5135-5144</pages><issn>0022-2461</issn><eissn>1573-4803</eissn><abstract>The type-2 InAs/InAs
1−x
Sb
x
superlattices on GaAs substrate with GaSb buffer layer were investigated by comparison of theoretical simulations and experimental data. The algorithm for selection of input parameters (binary and ternary materials) for simulations is presented. We proposed the method of the bandgap energy extraction of the absorption curve. The correct choice of the bulk materials and bowing parameters for the ternary alloys allows to reach good agreement of the experimental data and theoretical approach. One of the key achievements of this work was an electron affinity assessment for the device’s theoretical simulation. The detectivity of the long-/very long-wave InAs/InAs
1−x
Sb
x
superlattice photoconductors at the level of ~ 8 × 10
9
cm Hz
1/2
/W (cutoff wavelength 12 µm) and ~ 9 × 10
8
cm Hz
1/2
/W (cutoff wavelength 18 µm) at a temperature 230 K confirmed the good quality of these materials.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10853-020-04347-6</doi><tpages>10</tpages><orcidid>https://orcid.org/0000-0003-4362-4203</orcidid><orcidid>https://orcid.org/0000-0003-2736-0973</orcidid><orcidid>https://orcid.org/0000-0001-6433-7321</orcidid><orcidid>https://orcid.org/0000-0003-1963-3521</orcidid><orcidid>https://orcid.org/0000-0002-9092-755X</orcidid><orcidid>https://orcid.org/0000-0002-4122-6554</orcidid><oa>free_for_read</oa></addata></record> |
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| subjects | Affinity Algorithms Bowing Buffer layers Characterization and Evaluation of Materials Chemistry and Materials Science Classical Mechanics Computer simulation Crystallography and Scattering Methods Cut off wavelength Electron affinity Electronic Materials Materials Science Materials selection Parameters Photoconductors Polymer Sciences Solid Mechanics Substrates Superlattices Ternary alloys |
| title | Method of electron affinity evaluation for the type-2 InAs/InAs1−xSbx superlattice |
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