Direct Probing of Grain Boundary Resistance in Chemical Vapor Deposition‐Grown Monolayer MoS2 by Conductive Atomic Force Microscopy

Grain boundaries (GBs) of transition metal dichalcogenide monolayers (MLs) play an important role in many charge transport phenomena observed in 2D materials. Herein, nanoscale resolution current mapping by conductive atomic force microscopy (CAFM) is used for direct probing of the resistance associ...

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Veröffentlicht in:	Physica status solidi. PSS-RRL. Rapid research letters 2020-02, Vol.14 (2), p.n/a
Hauptverfasser:	Giannazzo, Filippo, Bosi, Matteo, Fabbri, Filippo, Schilirò, Emanuela, Greco, Giuseppe, Roccaforte, Fabrizio
Format:	Artikel
Sprache:	eng
Schlagworte:	Atomic force microscopy Charge transport Chemical vapor deposition conductive atomic force microscopy contact resistance Current voltage characteristics Domains Grain boundaries Local current Mapping Microscopy Molybdenum disulfide Monolayers MoS2 Organic chemistry Silicon dioxide Silicon substrates Transistors Transition metal compounds Transport phenomena Two dimensional materials Vapor resistance
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