Vertical β‐Ga2O3 Schottky Barrier Diodes with Enhanced Breakdown Voltage and High Switching Performance

Herein, vertical Schottky barrier diodes (SBDs) based on a bulk β‐Ga2O3 substrate are developed. The devices feature an ion‐implanted planar edge termination (ET) structure, which can effectively smoothen the electric field peak and reduce the electric field crowding at the Schottky junction edge. G...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2020-02, Vol.217 (3), p.n/a
Hauptverfasser:	Lu, Xing, Zhang, Xu, Jiang, Huaxing, Zou, Xinbo, Lau, Kei May, Wang, Gang
Format:	Artikel
Sprache:	eng
Schlagworte:	Breakdown breakdown voltages Circuits edge termination Electric fields Electric potential Gallium oxides Leakage current Ozone Recovery time reverse recovery Schottky barrier diodes Schottky diodes Silicon Substrates Switching Voltage β-Ga2O3
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