Regional Bandgap Tailoring of 1550nm‐Band InAs Quantum Dot Intermixing by Controlling Ion Implantation Depth
The regional control of the bandgap energies using the highly stacked quantum dot (QD) on InP(311)B substrate changing ion implantation depths in the process of the quantum dot intermixing (QDI) technique is investigated. The QDI process involves B+ implantation and rapid thermal annealing (RTA) aro...
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| Veröffentlicht in: | Physica status solidi. A, Applications and materials science Applications and materials science, 2020-02, Vol.217 (3) |
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| container_title | Physica status solidi. A, Applications and materials science |
| container_volume | 217 |
| creator | Isawa, Shohei Akashi, Yota Morita, Ryosuke Kaneko, Runa Okada, Hirokazu Matsumoto, Atsushi Akahane, Koichi Matsushima, Yuichi Ishikawa, Hiroshi Utaka, Katsuyuki |
| description | The regional control of the bandgap energies using the highly stacked quantum dot (QD) on InP(311)B substrate changing ion implantation depths in the process of the quantum dot intermixing (QDI) technique is investigated. The QDI process involves B+ implantation and rapid thermal annealing (RTA) around 600 °C, in which the ion implantation depths are controlled regionally with a combination of SiO2 and polymer (AZ) films. Controlled blue shifts of the photoluminescence (PL) spectra verify the effectiveness of the regionally controlled QDI process for application to semiconductor photonic integrated circuits using 1550 nm‐band QD such as integrated wavelength division multiplexing (WDM) light sources. |
| doi_str_mv | 10.1002/pssa.201900521 |
| format | Article |
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| source | Wiley Online Library Journals Frontfile Complete |
| subjects | Energy gap Integrated circuits Ion implantation Light sources Photoluminescence Photonics Polymer films Quantum dots Silicon dioxide Substrates Wave division multiplexing Wavelength division multiplexing |
| title | Regional Bandgap Tailoring of 1550nm‐Band InAs Quantum Dot Intermixing by Controlling Ion Implantation Depth |
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