Impact of Power Module Parasitic Capacitances on Medium-Voltage SiC MOSFETs Switching Transients

Increased switching speeds of wide bandgap (WBG) semiconductors result in a significant magnitude of the displacement currents through power module parasitic capacitances that are inherent in packaging design. This is of increasing concern, particularly in case of newly emerging medium-voltage (MV)...

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Veröffentlicht in:	IEEE journal of emerging and selected topics in power electronics 2020-03, Vol.8 (1), p.298-310
Hauptverfasser:	Dalal, Dipen Narendra, Christensen, Nicklas, Jorgensen, Asger Bjorn, Jorgensen, Jannick Kjaer, Beczkowski, Szymon, Munk-Nielsen, Stig, Uhrenfeldt, Christian
Format:	Artikel
Sprache:	eng
Schlagworte:	10-kV SiC MOSFETs Capacitance Converters Displacement Electric potential Electromagnetic interference electromagnetic interference (EMI)/electromagnetic compatibility (EMC) Energy dissipation Heating systems Modules MOSFET MOSFETs Multichip modules Packaging design parasitic capacitance Parasitics (electronics) Silicon carbide Switches Switching switching losses Transient analysis Voltage
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