Smart Self-Driving Multilevel Gate Driver for Fast Switching and Crosstalk Suppression of SiC MOSFETs
Wide-bandgap devices, such as silicon carbide and gallium nitride, have high switching speed potential. However, the actual speed in practical application is limited by circuit parasitics and interaction between high-side switch and lowside switch in a phase-leg configuration, known as crosstalk eff...
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Veröffentlicht in: | IEEE journal of emerging and selected topics in power electronics 2020-03, Vol.8 (1), p.442-453 |
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