Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs With SiO2/HfO2 Gate Dielectrics
Total-ionizing-dose (TID) effects and low-frequency noise are evaluated in 30-nm gate-length bulk and silicon-on-insulator (SOI) FinFETs for devices with fin widths of 10-40 nm. Minimal threshold voltage shifts are observed at 2 Mrad(SiO2), but large increases in low-frequency noise are found, and s...
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| Veröffentlicht in: | IEEE transactions on nuclear science 2020-01, Vol.67 (1), p.245-252 |
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| creator | Gorchichko, Mariia Cao, Yanrong Zhang, En Xia Yan, Dawei Gong, Huiqi Zhao, Simeng E. Wang, Pan Jiang, Rong Liang, Chundong Fleetwood, Daniel M. Schrimpf, Ronald D. Reed, Robert A. Linten, Dimitri |
| description | Total-ionizing-dose (TID) effects and low-frequency noise are evaluated in 30-nm gate-length bulk and silicon-on-insulator (SOI) FinFETs for devices with fin widths of 10-40 nm. Minimal threshold voltage shifts are observed at 2 Mrad(SiO2), but large increases in low-frequency noise are found, and significant changes in defect-energy distributions are inferred. Radiation-induced leakage current is enhanced for narrow- and short-channel bulk FinFETs. Short-channel SOI FinFETs show enhanced degradation compared with longer-channel devices. Narrow- and short-channel SOI devices exhibit high radiation tolerance. Significant random telegraph noise (RTN) is observed in smaller devices due to prominent individual defects. |
| doi_str_mv | 10.1109/TNS.2019.2960815 |
| format | Article |
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Minimal threshold voltage shifts are observed at 2 Mrad(SiO2), but large increases in low-frequency noise are found, and significant changes in defect-energy distributions are inferred. Radiation-induced leakage current is enhanced for narrow- and short-channel bulk FinFETs. Short-channel SOI FinFETs show enhanced degradation compared with longer-channel devices. Narrow- and short-channel SOI devices exhibit high radiation tolerance. Significant random telegraph noise (RTN) is observed in smaller devices due to prominent individual defects.</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/TNS.2019.2960815</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>PISCATAWAY: IEEE</publisher><subject>Degradation ; Devices ; Engineering ; Engineering, Electrical & Electronic ; FinFET ; FinFETs ; Hafnium oxide ; Leakage current ; LF noise ; Logic gates ; Low-frequency noise ; Noise ; Noise measurement ; Noise tolerance ; Nuclear Science & Technology ; Radiation ; Radiation effects ; Radiation leaks ; Radiation tolerance ; random telegraph noise (RTN) ; Science & Technology ; Silicon dioxide ; silicon on insulator (SOI) ; Silicon-on-insulator ; SOI (semiconductors) ; Technology ; Threshold voltage ; total-ionizing dose (TID)</subject><ispartof>IEEE transactions on nuclear science, 2020-01, Vol.67 (1), p.245-252</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2020</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>true</woscitedreferencessubscribed><woscitedreferencescount>27</woscitedreferencescount><woscitedreferencesoriginalsourcerecordid>wos000510824100033</woscitedreferencesoriginalsourcerecordid><cites>FETCH-LOGICAL-i203t-57796f54309dd1668c2dda71ceb5aec59f18e6c9d0ef629f3c56ed356f6d4ed3</cites><orcidid>0000-0001-7419-2701 ; 0000-0002-3119-0850 ; 0000-0003-4257-7142 ; 0000-0002-7943-2759 ; 0000-0003-3746-192X ; 0000-0003-1968-8055 ; 0000-0002-6727-5493 ; 0000-0001-9303-9980 ; 0000-0002-8021-2411 ; 0000-0001-9970-5032 ; 0000-0002-2457-4936</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8937016$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>315,781,785,797,27928,27929,54762</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8937016$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Gorchichko, Mariia</creatorcontrib><creatorcontrib>Cao, Yanrong</creatorcontrib><creatorcontrib>Zhang, En Xia</creatorcontrib><creatorcontrib>Yan, Dawei</creatorcontrib><creatorcontrib>Gong, Huiqi</creatorcontrib><creatorcontrib>Zhao, Simeng E.</creatorcontrib><creatorcontrib>Wang, Pan</creatorcontrib><creatorcontrib>Jiang, Rong</creatorcontrib><creatorcontrib>Liang, Chundong</creatorcontrib><creatorcontrib>Fleetwood, Daniel M.</creatorcontrib><creatorcontrib>Schrimpf, Ronald D.</creatorcontrib><creatorcontrib>Reed, Robert A.</creatorcontrib><creatorcontrib>Linten, Dimitri</creatorcontrib><title>Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs With SiO2/HfO2 Gate Dielectrics</title><title>IEEE transactions on nuclear science</title><addtitle>TNS</addtitle><addtitle>IEEE T NUCL SCI</addtitle><description>Total-ionizing-dose (TID) effects and low-frequency noise are evaluated in 30-nm gate-length bulk and silicon-on-insulator (SOI) FinFETs for devices with fin widths of 10-40 nm. Minimal threshold voltage shifts are observed at 2 Mrad(SiO2), but large increases in low-frequency noise are found, and significant changes in defect-energy distributions are inferred. Radiation-induced leakage current is enhanced for narrow- and short-channel bulk FinFETs. Short-channel SOI FinFETs show enhanced degradation compared with longer-channel devices. Narrow- and short-channel SOI devices exhibit high radiation tolerance. Significant random telegraph noise (RTN) is observed in smaller devices due to prominent individual defects.</description><subject>Degradation</subject><subject>Devices</subject><subject>Engineering</subject><subject>Engineering, Electrical & Electronic</subject><subject>FinFET</subject><subject>FinFETs</subject><subject>Hafnium oxide</subject><subject>Leakage current</subject><subject>LF noise</subject><subject>Logic gates</subject><subject>Low-frequency noise</subject><subject>Noise</subject><subject>Noise measurement</subject><subject>Noise tolerance</subject><subject>Nuclear Science & Technology</subject><subject>Radiation</subject><subject>Radiation effects</subject><subject>Radiation leaks</subject><subject>Radiation tolerance</subject><subject>random telegraph noise (RTN)</subject><subject>Science & Technology</subject><subject>Silicon dioxide</subject><subject>silicon on insulator (SOI)</subject><subject>Silicon-on-insulator</subject><subject>SOI (semiconductors)</subject><subject>Technology</subject><subject>Threshold voltage</subject><subject>total-ionizing dose (TID)</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><sourceid>AOWDO</sourceid><recordid>eNqNj89LYzEQx4MoWH_chb0E9iipk-QlLzmu1Wqh2EMLHsszb-LGrYn7kiIK-79vsIJXTzPD9_OZYQg54zDmHOzF6m45FsDtWFgNhqs9MuJKGcZVa_bJCIAbZhtrD8lRzk91bBSoEfm3SqXbsFmK4T3ER3aVMtJr79GVTLvY03l6ZdMB_24xujd6l0LNQ6QSWHymN11BNsf4WH7Ty-3mz4exXMzoNMTp9SrT-1CTZViIi1u_EB88vQq4qeuH4PIJOfDdJuPpZz0mq6pNbtl8cTOb_JqzIEAWptrWaq8aCbbvudbGib7vWu7wQXXolPXcoHa2B_RaWC-d0thLpb3um9ock5-7tS9Dqo_ksn5K2yHWi2shG8u5Mgoqdb6jXvEh-exC_RjXL0N47oa3NQAoDkY0vHZSVtp8n56E0pWQ4iRtY6nqj50aEL8UY2ULXMv_5puH9w</recordid><startdate>202001</startdate><enddate>202001</enddate><creator>Gorchichko, Mariia</creator><creator>Cao, Yanrong</creator><creator>Zhang, En Xia</creator><creator>Yan, Dawei</creator><creator>Gong, Huiqi</creator><creator>Zhao, Simeng E.</creator><creator>Wang, Pan</creator><creator>Jiang, Rong</creator><creator>Liang, Chundong</creator><creator>Fleetwood, Daniel M.</creator><creator>Schrimpf, Ronald D.</creator><creator>Reed, Robert A.</creator><creator>Linten, Dimitri</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Minimal threshold voltage shifts are observed at 2 Mrad(SiO2), but large increases in low-frequency noise are found, and significant changes in defect-energy distributions are inferred. Radiation-induced leakage current is enhanced for narrow- and short-channel bulk FinFETs. Short-channel SOI FinFETs show enhanced degradation compared with longer-channel devices. Narrow- and short-channel SOI devices exhibit high radiation tolerance. 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| subjects | Degradation Devices Engineering Engineering, Electrical & Electronic FinFET FinFETs Hafnium oxide Leakage current LF noise Logic gates Low-frequency noise Noise Noise measurement Noise tolerance Nuclear Science & Technology Radiation Radiation effects Radiation leaks Radiation tolerance random telegraph noise (RTN) Science & Technology Silicon dioxide silicon on insulator (SOI) Silicon-on-insulator SOI (semiconductors) Technology Threshold voltage total-ionizing dose (TID) |
| title | Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs With SiO2/HfO2 Gate Dielectrics |
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