GaAsSbN-based p-i-n heterostructures for solar cell applications grown by liquid-phase epitaxy

We present an original study on quaternary GaAsSbN layers and multilayer heterostructures grown by low-temperature liquid-phase epitaxy (LPE) on GaAs substrates aiming to explore their potential for photovoltaic applications. We choose Sn and Mg as suitable dopants for practical use. Our experiments...

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Veröffentlicht in:	Journal of materials science. Materials in electronics 2020-02, Vol.31 (3), p.2073-2080
Hauptverfasser:	Milanova, Malina, Donchev, Vesselin, Arnaudov, Boris, Alonso-Álvarez, Diego, Terziyska, Penka
Format:	Artikel
Sprache:	eng
Schlagworte:	Carrier density Characterization and Evaluation of Materials Chemistry and Materials Science Doping Epitaxial growth Heterostructures Liquid phase epitaxy Liquid phases Low temperature Materials Science Multilayers Optical and Electronic Materials Photoluminescence Photovoltaic cells Room temperature Solar cells Substrates Temperature Temperature dependence Time dependence
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