Relaxed GaP on Si with low threading dislocation density

We demonstrate a two-step procedure for the growth of relaxed GaP on pseudomorphic GaP/Si templates with a threading dislocation density (TDD) of 1.0–1.1 × 106 cm−2. In lattice-mismatched epitaxy, suppressed dislocation nucleation and unimpeded dislocation glide during relaxation are both critical t...

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Veröffentlicht in:	Applied physics letters 2020-01, Vol.116 (4)
Hauptverfasser:	Hool, Ryan D., Chai, Yuji, Sun, Yukun, Eng, Brendan C., Dhingra, Pankul, Fan, Shizhao, Nay Yaung, Kevin, Lee, Minjoo Larry
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Dislocation density Epitaxy Nucleation Thickness Threading dislocations Trenches
Online-Zugang:	Volltext
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