Influence of air humidity on the low-frequency capacitance of silicon MOS structures with a nanoscale oxide layer

•A new mechanism of the low-frequency conductivity in MOS weakly inverted structures with nanoscale oxides is proposed.•H2O induced surface states make the main contribution to the total structure capacitance.•Surface state capacitance depends linearly on air humidity.•Reasons for the observed linea...

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Veröffentlicht in:	Sensors and actuators. B, Chemical Chemical, 2020-02, Vol.304, p.127318, Article 127318
1. Verfasser:	Fastykovsky, Pavel P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Air humidity Capacitance Current carriers Generation-recombination processes Humidity Low-frequency capacitance Minority carriers MOS structure Nanoscale silicon oxide Silicon Silicon dioxide Space charge Surface states Water chemistry
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