Effect of intermediate layer and electrode materials on dielectric and flexoelectric properties of double-layer BST films with parallel structure
BST films were prepared on Pt/Ti/SiO 2 /Si substrates by spin-coating method and double-layer BST films with parallel structure were designed in order to improve their dielectric and flexoelectric properties. The best dielectric constant 409 and dielectric loss 0.0104 of the single-layer BST film ar...
Gespeichert in:
Veröffentlicht in: | Journal of sol-gel science and technology 2020-02, Vol.93 (2), p.244-250 |
---|---|
Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Schreiben Sie den ersten Kommentar!