Effect of intermediate layer and electrode materials on dielectric and flexoelectric properties of double-layer BST films with parallel structure

BST films were prepared on Pt/Ti/SiO 2 /Si substrates by spin-coating method and double-layer BST films with parallel structure were designed in order to improve their dielectric and flexoelectric properties. The best dielectric constant 409 and dielectric loss 0.0104 of the single-layer BST film ar...

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Veröffentlicht in:Journal of sol-gel science and technology 2020-02, Vol.93 (2), p.244-250
Hauptverfasser: Dong, Wenbin, Liu, Jun, Jiang, Nan, Li, Shunling, Bi, Kai, Luo, Ying
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Sprache:eng
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