Resistive switching behaviors in the BaTiO3/La0.7Sr0.3MnO3 layered heterostructure driven by external electric field

•Nonvolatile resistive switching behaviors are observed by controlling the polarity of the BTO film.•The variation TMI of the LSMO layer was caused by the change of external electric field.•The converse magnetoelectric effect can be realized through the movement of polarized carriers. By controlling...

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Veröffentlicht in:	Journal of magnetism and magnetic materials 2020-03, Vol.497, p.165879, Article 165879
Hauptverfasser:	Li, Ting Xian, Li, Ruolan, Ma, Dongwei, Li, Bingjie, Li, Kuoshe, Hu, Zhou
Format:	Artikel
Sprache:	eng
Schlagworte:	Barium titanates Crystal structure Depletion Electric fields Electric properties Electrical resistivity Electronic devices Ferroelectric materials Ferroelectricity Heterostructures Magnetic properties Memory devices Metal-insulator transition Multiferroic heterostructure Nonvolatile random-access memories Pulsed laser deposition Pulsed lasers Random access memory Resistive switching behavior Single crystals Strontium titanates Substrates Switching Transition temperature
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