In situ TEM and multiscale study of dislocation loop formation in the vicinity of a grain boundary

Preferential formation of dislocation loops near a grain boundary (GB) in pure magnesium was observed under in-situ TEM 200 KV electron irradiation at 300 K. These loops are vacancy in nature. A rate-theory-based model is presented to explain this observation. Specifically, the model considered an i...

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Veröffentlicht in:Journal of nuclear materials 2020-01, Vol.528, p.151872, Article 151872
Hauptverfasser: Dong, Qingshan, Saidi, Peyman, Béland, Laurent K., Yao, Zhongwen, Dai, Cong, Daymond, Mark R.
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container_issue
container_start_page 151872
container_title Journal of nuclear materials
container_volume 528
creator Dong, Qingshan
Saidi, Peyman
Béland, Laurent K.
Yao, Zhongwen
Dai, Cong
Daymond, Mark R.
description Preferential formation of dislocation loops near a grain boundary (GB) in pure magnesium was observed under in-situ TEM 200 KV electron irradiation at 300 K. These loops are vacancy in nature. A rate-theory-based model is presented to explain this observation. Specifically, the model considered an irradiated domain surrounded by GBs and free surfaces. Molecular dynamics (MD) and finite difference methods (FDM) were combined to calibrate and solve the model. The distribution of loops with respect to the GB can be divided into three regions: 1) a defect free zone adjacent to the GB, 2) a region with vacancy loops in the distance range of 10–200 nm from the GB, and 3) a region free of extended defects far away from the GB. The characteristics of the three zones, and the vacancy nature of the loops can be explained by the relative sink strength of the GB to interstitial-type and vacancy-type defects. [Display omitted]
doi_str_mv 10.1016/j.jnucmat.2019.151872
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These loops are vacancy in nature. A rate-theory-based model is presented to explain this observation. Specifically, the model considered an irradiated domain surrounded by GBs and free surfaces. Molecular dynamics (MD) and finite difference methods (FDM) were combined to calibrate and solve the model. The distribution of loops with respect to the GB can be divided into three regions: 1) a defect free zone adjacent to the GB, 2) a region with vacancy loops in the distance range of 10–200 nm from the GB, and 3) a region free of extended defects far away from the GB. The characteristics of the three zones, and the vacancy nature of the loops can be explained by the relative sink strength of the GB to interstitial-type and vacancy-type defects. 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subjects Crystal defects
Dislocation
Dislocation loops
Electron irradiation
Finite difference method
Finite difference methods
Free surfaces
Grain boundaries
Grain boundary
Irradiation
Magnesium
Molecular dynamics
Multiscale analysis
Radiation
Vacancies
title In situ TEM and multiscale study of dislocation loop formation in the vicinity of a grain boundary
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