Solution-processed multilayer OLEDs with wide bandgap host

In the present work, efficient Solution-processed green light-emitting diodes based on a phosphorescent emitter with wide bandgap host are reported. A maximum efficiency of 25 cd/A was obtained using the green emitter tris[2-( p -tolyl)pyridine]iridium(III) blended with diphenyl-4-triphenylsilylphen...

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Veröffentlicht in:Applied physics. A, Materials science & processing Materials science & processing, 2020, Vol.126 (1), Article 79
Hauptverfasser: Hamidabadi, Vahid Fallah, Bahari, Ali, Mirnia, Nordin
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description In the present work, efficient Solution-processed green light-emitting diodes based on a phosphorescent emitter with wide bandgap host are reported. A maximum efficiency of 25 cd/A was obtained using the green emitter tris[2-( p -tolyl)pyridine]iridium(III) blended with diphenyl-4-triphenylsilylphenyl-phosphine oxide as the emission layer. The maximum luminance exceeded 10,000 cd/m 2 , indicating that by simply blending a wide bandgap host with a phosphorescent emitter, efficient electroluminescence with a simplified device structure can be obtained.
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subjects Applied physics
Characterization and Evaluation of Materials
Condensed Matter Physics
Diodes
Electroluminescence
Emitters
Energy gap
Iridium
Machines
Manufacturing
Materials science
Multilayers
Nanotechnology
Optical and Electronic Materials
Organic light emitting diodes
Phosphine oxide
Phosphorescence
Physics
Physics and Astronomy
Processes
Surfaces and Interfaces
Thin Films
title Solution-processed multilayer OLEDs with wide bandgap host
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