Acoustoelectric charge transport at the LaAlO3/SrTiO3 interface
The two-dimensional electron system (2DES) formed at the interface of LaAlO3 (LAO) and SrTiO3 (STO), both band insulators in bulk, exhibits properties not easily attainable in conventional electronic materials. The extreme shallowness of the 2DES, only a few nanometers below the surface, opens up un...
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creator | Uzun, Y. Smink, A. E. M. de Jong, M. P. Hilgenkamp, H. van der Wiel, W. G. |
description | The two-dimensional electron system (2DES) formed at the interface of LaAlO3 (LAO) and SrTiO3 (STO), both band insulators in bulk, exhibits properties not easily attainable in conventional electronic materials. The extreme shallowness of the 2DES, only a few nanometers below the surface, opens up unique possibilities such as tunneling spectroscopy, local electronic sensing, and in situ patterning by manipulating the surface properties. It is particularly tempting to manipulate the charge carriers with surface acoustic wave (SAW) phonons, which are confined to the surface. However, the absence of intrinsic piezoelectricity in both LAO and STO complicates the electric generation of SAWs, as well as the induction of an acoustoelectric current. Here, we present robust acoustoelectric coupling between SAWs and the LAO/STO 2DES by using electrostriction in STO, induced by a dc electric field. Electromechanical coupling to the carriers is provided by phonon-induced modulation of the 2DES potential well, leading to SAW-induced carrier transport. The ability to control charge carriers with SAWs brings the versatile LAO/STO 2DES into reach of quantum acoustics, opening possibilities to study the interplay of nanoscale mechanical waves and the rich physics exhibited by nonpiezoelectric complex oxides, including superconductivity, magnetism, and correlated insulator states. |
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E. M. ; de Jong, M. P. ; Hilgenkamp, H. ; van der Wiel, W. G.</creator><creatorcontrib>Uzun, Y. ; Smink, A. E. M. ; de Jong, M. P. ; Hilgenkamp, H. ; van der Wiel, W. G.</creatorcontrib><description>The two-dimensional electron system (2DES) formed at the interface of LaAlO3 (LAO) and SrTiO3 (STO), both band insulators in bulk, exhibits properties not easily attainable in conventional electronic materials. The extreme shallowness of the 2DES, only a few nanometers below the surface, opens up unique possibilities such as tunneling spectroscopy, local electronic sensing, and in situ patterning by manipulating the surface properties. It is particularly tempting to manipulate the charge carriers with surface acoustic wave (SAW) phonons, which are confined to the surface. However, the absence of intrinsic piezoelectricity in both LAO and STO complicates the electric generation of SAWs, as well as the induction of an acoustoelectric current. Here, we present robust acoustoelectric coupling between SAWs and the LAO/STO 2DES by using electrostriction in STO, induced by a dc electric field. Electromechanical coupling to the carriers is provided by phonon-induced modulation of the 2DES potential well, leading to SAW-induced carrier transport. 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E. M.</creatorcontrib><creatorcontrib>de Jong, M. P.</creatorcontrib><creatorcontrib>Hilgenkamp, H.</creatorcontrib><creatorcontrib>van der Wiel, W. G.</creatorcontrib><title>Acoustoelectric charge transport at the LaAlO3/SrTiO3 interface</title><title>Applied physics letters</title><description>The two-dimensional electron system (2DES) formed at the interface of LaAlO3 (LAO) and SrTiO3 (STO), both band insulators in bulk, exhibits properties not easily attainable in conventional electronic materials. The extreme shallowness of the 2DES, only a few nanometers below the surface, opens up unique possibilities such as tunneling spectroscopy, local electronic sensing, and in situ patterning by manipulating the surface properties. It is particularly tempting to manipulate the charge carriers with surface acoustic wave (SAW) phonons, which are confined to the surface. However, the absence of intrinsic piezoelectricity in both LAO and STO complicates the electric generation of SAWs, as well as the induction of an acoustoelectric current. Here, we present robust acoustoelectric coupling between SAWs and the LAO/STO 2DES by using electrostriction in STO, induced by a dc electric field. Electromechanical coupling to the carriers is provided by phonon-induced modulation of the 2DES potential well, leading to SAW-induced carrier transport. The ability to control charge carriers with SAWs brings the versatile LAO/STO 2DES into reach of quantum acoustics, opening possibilities to study the interplay of nanoscale mechanical waves and the rich physics exhibited by nonpiezoelectric complex oxides, including superconductivity, magnetism, and correlated insulator states.</description><subject>Acoustics</subject><subject>Applied physics</subject><subject>Carrier transport</subject><subject>Charge transport</subject><subject>Coupling</subject><subject>Current carriers</subject><subject>Electric fields</subject><subject>Electronic materials</subject><subject>Electrostriction</subject><subject>Insulators</subject><subject>Magnetism</subject><subject>Phonons</subject><subject>Piezoelectricity</subject><subject>Saws</subject><subject>Stability</subject><subject>Strontium titanates</subject><subject>Superconductivity</subject><subject>Surface acoustic waves</subject><subject>Surface properties</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp90E1LAzEQBuAgCtbqwX-w4Elh20nGJLsnKaV-QKEH6zlks4ndUjdrkhX896606EHwNAw8vMO8hFxSmFAQOKUTTrFEkEdkREHKHCktjskIADAXJaen5CzG7bByhjgidzPj-5i83VmTQmMys9Hh1WYp6DZ2PqRMpyxtbLbUs90Kp89h3awwa9pkg9PGnpMTp3fRXhzmmLzcL9bzx3y5eniaz5a5QcFS7rgtBFbItcRbQC4rWVdYOmNrDqU2rqyo1bWgwsgCpOaFZcJgzQANw4GOydU-twv-vbcxqa3vQzucVMMfjEFZAA7qeq9M8DEG61QXmjcdPhUF9d2PourQz2Bv9jaaJunU-PYHf_jwC1VXu__w3-QvwEByNQ</recordid><startdate>20200106</startdate><enddate>20200106</enddate><creator>Uzun, Y.</creator><creator>Smink, A. 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G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c362t-f5e863b35a7340357b7db39fced509acf9b1ead616c7807a58e26c3d203c23db3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Acoustics</topic><topic>Applied physics</topic><topic>Carrier transport</topic><topic>Charge transport</topic><topic>Coupling</topic><topic>Current carriers</topic><topic>Electric fields</topic><topic>Electronic materials</topic><topic>Electrostriction</topic><topic>Insulators</topic><topic>Magnetism</topic><topic>Phonons</topic><topic>Piezoelectricity</topic><topic>Saws</topic><topic>Stability</topic><topic>Strontium titanates</topic><topic>Superconductivity</topic><topic>Surface acoustic waves</topic><topic>Surface properties</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Uzun, Y.</creatorcontrib><creatorcontrib>Smink, A. E. M.</creatorcontrib><creatorcontrib>de Jong, M. P.</creatorcontrib><creatorcontrib>Hilgenkamp, H.</creatorcontrib><creatorcontrib>van der Wiel, W. G.</creatorcontrib><collection>AIP Open Access Journals</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Uzun, Y.</au><au>Smink, A. E. M.</au><au>de Jong, M. P.</au><au>Hilgenkamp, H.</au><au>van der Wiel, W. G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Acoustoelectric charge transport at the LaAlO3/SrTiO3 interface</atitle><jtitle>Applied physics letters</jtitle><date>2020-01-06</date><risdate>2020</risdate><volume>116</volume><issue>1</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>The two-dimensional electron system (2DES) formed at the interface of LaAlO3 (LAO) and SrTiO3 (STO), both band insulators in bulk, exhibits properties not easily attainable in conventional electronic materials. The extreme shallowness of the 2DES, only a few nanometers below the surface, opens up unique possibilities such as tunneling spectroscopy, local electronic sensing, and in situ patterning by manipulating the surface properties. It is particularly tempting to manipulate the charge carriers with surface acoustic wave (SAW) phonons, which are confined to the surface. However, the absence of intrinsic piezoelectricity in both LAO and STO complicates the electric generation of SAWs, as well as the induction of an acoustoelectric current. Here, we present robust acoustoelectric coupling between SAWs and the LAO/STO 2DES by using electrostriction in STO, induced by a dc electric field. Electromechanical coupling to the carriers is provided by phonon-induced modulation of the 2DES potential well, leading to SAW-induced carrier transport. 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subjects | Acoustics Applied physics Carrier transport Charge transport Coupling Current carriers Electric fields Electronic materials Electrostriction Insulators Magnetism Phonons Piezoelectricity Saws Stability Strontium titanates Superconductivity Surface acoustic waves Surface properties |
title | Acoustoelectric charge transport at the LaAlO3/SrTiO3 interface |
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