Matched X-Ray Reflectometry and Diffractometry of Super-Multiperiod Heterostructures Grown by Molecular Beam Epitaxy

Heterostructures with strongly-coupled multiple quantum wells, such as super-multiperiod superlattices with high perfection, may contain hundreds of layers, whose thicknesses can vary by orders of magnitude. The proposed method of characterization, consisting of the matched application of high-resol...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2019-12, Vol.53 (14), p.1910-1913
Hauptverfasser: Goray, L. I., Pirogov, E. V., Sobolev, M. S., Ilkiv, I. V., Dashkov, A. S., Vainer, Yu. A., Svechnikov, M. V., Yunin, P. A., Chkhalo, N. I., Bouravlev, A. D.
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container_end_page 1913
container_issue 14
container_start_page 1910
container_title Semiconductors (Woodbury, N.Y.)
container_volume 53
creator Goray, L. I.
Pirogov, E. V.
Sobolev, M. S.
Ilkiv, I. V.
Dashkov, A. S.
Vainer, Yu. A.
Svechnikov, M. V.
Yunin, P. A.
Chkhalo, N. I.
Bouravlev, A. D.
description Heterostructures with strongly-coupled multiple quantum wells, such as super-multiperiod superlattices with high perfection, may contain hundreds of layers, whose thicknesses can vary by orders of magnitude. The proposed method of characterization, consisting of the matched application of high-resolution X-ray diffractometry and reflectometry, makes it possible to study super-multiperiod structures of various types, including those with long periods and thin layers, and with high accuracy to determine the thicknesses of layers and roughness/diffuseness of boundaries. The difference between the expected and resulting thicknesses of the layers was 2–7% and 1–3% for the type I (InAs/GaAs) and type II (GaAs/Al 0.3 Ga 0.7 As) samples, respectively. Both types of structures are characterized by sharp interfaces with the RMS width of the transition layers of the order of several Å. Based on the best solution of inverse scattering problems, it is possible to determine with high accuracy both the morphology of the layers and their composition. That can be considered as the first step in the analysis of structures with a very large number of periods.
doi_str_mv 10.1134/S1063782619140082
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fullrecord <record><control><sourceid>gale_proqu</sourceid><recordid>TN_cdi_proquest_journals_2330071855</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><galeid>A609651807</galeid><sourcerecordid>A609651807</sourcerecordid><originalsourceid>FETCH-LOGICAL-c355t-551ece3228e303b7944ce1ea0911e5d3e171df436209d8fc967109c32b6232903</originalsourceid><addsrcrecordid>eNp1kU1LxDAQhoso-PkDvAU8V2eSNm2Ofq6Ci7Cr4K1k04lWus2apmj_vVlW9CCSwwwz7zPJm0mSY4RTRJGdzRGkKEouUWEGUPKtZA9BQSqzQm2vcynSdX832e_7NwDEMs_2kjDVwbxSzZ7TmR7ZjGxLJrglBT8y3dXsqrHW65-Ss2w-rMin06ENTUwaV7NbCuRdH_xgwuCpZxPvPjq2GNnUxXFDqz27IL1k16sm6M_xMNmxuu3p6DseJE8314-Xt-n9w-Tu8vw-NSLPQ5rnSIYE5yUJEItCZZkhJA0KkfJaEBZY20xIDqourVGyiJaN4AvJBVcgDpKTzdyVd-8D9aF6c4Pv4pUVFwKgiH-QR9XpRvWiW6qazroQDcdT07IxriPbxPq5BCVzLKGIAG4AE033nmy18s1S-7FCqNbbqP5sIzJ8w_RR272Q_33K_9AXRqmLow</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2330071855</pqid></control><display><type>article</type><title>Matched X-Ray Reflectometry and Diffractometry of Super-Multiperiod Heterostructures Grown by Molecular Beam Epitaxy</title><source>SpringerLink Journals - AutoHoldings</source><creator>Goray, L. I. ; Pirogov, E. V. ; Sobolev, M. S. ; Ilkiv, I. V. ; Dashkov, A. S. ; Vainer, Yu. A. ; Svechnikov, M. V. ; Yunin, P. A. ; Chkhalo, N. I. ; Bouravlev, A. D.</creator><creatorcontrib>Goray, L. I. ; Pirogov, E. V. ; Sobolev, M. S. ; Ilkiv, I. V. ; Dashkov, A. S. ; Vainer, Yu. A. ; Svechnikov, M. V. ; Yunin, P. A. ; Chkhalo, N. I. ; Bouravlev, A. D.</creatorcontrib><description>Heterostructures with strongly-coupled multiple quantum wells, such as super-multiperiod superlattices with high perfection, may contain hundreds of layers, whose thicknesses can vary by orders of magnitude. The proposed method of characterization, consisting of the matched application of high-resolution X-ray diffractometry and reflectometry, makes it possible to study super-multiperiod structures of various types, including those with long periods and thin layers, and with high accuracy to determine the thicknesses of layers and roughness/diffuseness of boundaries. The difference between the expected and resulting thicknesses of the layers was 2–7% and 1–3% for the type I (InAs/GaAs) and type II (GaAs/Al 0.3 Ga 0.7 As) samples, respectively. Both types of structures are characterized by sharp interfaces with the RMS width of the transition layers of the order of several Å. Based on the best solution of inverse scattering problems, it is possible to determine with high accuracy both the morphology of the layers and their composition. That can be considered as the first step in the analysis of structures with a very large number of periods.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782619140082</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Analysis ; Epitaxial growth ; Epitaxy ; Heterostructures ; Inverse scattering ; Magnetic Materials ; Magnetism ; Molecular beam epitaxy ; Morphology ; Nanostructures Characterization ; Physics ; Physics and Astronomy ; Quantum wells ; Reflectometry ; Superlattices ; Thickness ; Thin films ; Transition layers</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2019-12, Vol.53 (14), p.1910-1913</ispartof><rights>Pleiades Publishing, Ltd. 2019</rights><rights>COPYRIGHT 2019 Springer</rights><rights>Copyright Springer Nature B.V. 2019</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c355t-551ece3228e303b7944ce1ea0911e5d3e171df436209d8fc967109c32b6232903</citedby><cites>FETCH-LOGICAL-c355t-551ece3228e303b7944ce1ea0911e5d3e171df436209d8fc967109c32b6232903</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063782619140082$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063782619140082$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Goray, L. I.</creatorcontrib><creatorcontrib>Pirogov, E. V.</creatorcontrib><creatorcontrib>Sobolev, M. S.</creatorcontrib><creatorcontrib>Ilkiv, I. V.</creatorcontrib><creatorcontrib>Dashkov, A. S.</creatorcontrib><creatorcontrib>Vainer, Yu. A.</creatorcontrib><creatorcontrib>Svechnikov, M. V.</creatorcontrib><creatorcontrib>Yunin, P. A.</creatorcontrib><creatorcontrib>Chkhalo, N. I.</creatorcontrib><creatorcontrib>Bouravlev, A. D.</creatorcontrib><title>Matched X-Ray Reflectometry and Diffractometry of Super-Multiperiod Heterostructures Grown by Molecular Beam Epitaxy</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>Heterostructures with strongly-coupled multiple quantum wells, such as super-multiperiod superlattices with high perfection, may contain hundreds of layers, whose thicknesses can vary by orders of magnitude. The proposed method of characterization, consisting of the matched application of high-resolution X-ray diffractometry and reflectometry, makes it possible to study super-multiperiod structures of various types, including those with long periods and thin layers, and with high accuracy to determine the thicknesses of layers and roughness/diffuseness of boundaries. The difference between the expected and resulting thicknesses of the layers was 2–7% and 1–3% for the type I (InAs/GaAs) and type II (GaAs/Al 0.3 Ga 0.7 As) samples, respectively. Both types of structures are characterized by sharp interfaces with the RMS width of the transition layers of the order of several Å. Based on the best solution of inverse scattering problems, it is possible to determine with high accuracy both the morphology of the layers and their composition. That can be considered as the first step in the analysis of structures with a very large number of periods.</description><subject>Analysis</subject><subject>Epitaxial growth</subject><subject>Epitaxy</subject><subject>Heterostructures</subject><subject>Inverse scattering</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>Molecular beam epitaxy</subject><subject>Morphology</subject><subject>Nanostructures Characterization</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Quantum wells</subject><subject>Reflectometry</subject><subject>Superlattices</subject><subject>Thickness</subject><subject>Thin films</subject><subject>Transition layers</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNp1kU1LxDAQhoso-PkDvAU8V2eSNm2Ofq6Ci7Cr4K1k04lWus2apmj_vVlW9CCSwwwz7zPJm0mSY4RTRJGdzRGkKEouUWEGUPKtZA9BQSqzQm2vcynSdX832e_7NwDEMs_2kjDVwbxSzZ7TmR7ZjGxLJrglBT8y3dXsqrHW65-Ss2w-rMin06ENTUwaV7NbCuRdH_xgwuCpZxPvPjq2GNnUxXFDqz27IL1k16sm6M_xMNmxuu3p6DseJE8314-Xt-n9w-Tu8vw-NSLPQ5rnSIYE5yUJEItCZZkhJA0KkfJaEBZY20xIDqourVGyiJaN4AvJBVcgDpKTzdyVd-8D9aF6c4Pv4pUVFwKgiH-QR9XpRvWiW6qazroQDcdT07IxriPbxPq5BCVzLKGIAG4AE033nmy18s1S-7FCqNbbqP5sIzJ8w_RR272Q_33K_9AXRqmLow</recordid><startdate>20191201</startdate><enddate>20191201</enddate><creator>Goray, L. I.</creator><creator>Pirogov, E. V.</creator><creator>Sobolev, M. S.</creator><creator>Ilkiv, I. V.</creator><creator>Dashkov, A. S.</creator><creator>Vainer, Yu. A.</creator><creator>Svechnikov, M. V.</creator><creator>Yunin, P. A.</creator><creator>Chkhalo, N. I.</creator><creator>Bouravlev, A. D.</creator><general>Pleiades Publishing</general><general>Springer</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20191201</creationdate><title>Matched X-Ray Reflectometry and Diffractometry of Super-Multiperiod Heterostructures Grown by Molecular Beam Epitaxy</title><author>Goray, L. I. ; Pirogov, E. V. ; Sobolev, M. S. ; Ilkiv, I. V. ; Dashkov, A. S. ; Vainer, Yu. A. ; Svechnikov, M. V. ; Yunin, P. A. ; Chkhalo, N. I. ; Bouravlev, A. D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c355t-551ece3228e303b7944ce1ea0911e5d3e171df436209d8fc967109c32b6232903</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Analysis</topic><topic>Epitaxial growth</topic><topic>Epitaxy</topic><topic>Heterostructures</topic><topic>Inverse scattering</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>Molecular beam epitaxy</topic><topic>Morphology</topic><topic>Nanostructures Characterization</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Quantum wells</topic><topic>Reflectometry</topic><topic>Superlattices</topic><topic>Thickness</topic><topic>Thin films</topic><topic>Transition layers</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Goray, L. I.</creatorcontrib><creatorcontrib>Pirogov, E. V.</creatorcontrib><creatorcontrib>Sobolev, M. S.</creatorcontrib><creatorcontrib>Ilkiv, I. V.</creatorcontrib><creatorcontrib>Dashkov, A. S.</creatorcontrib><creatorcontrib>Vainer, Yu. A.</creatorcontrib><creatorcontrib>Svechnikov, M. V.</creatorcontrib><creatorcontrib>Yunin, P. A.</creatorcontrib><creatorcontrib>Chkhalo, N. I.</creatorcontrib><creatorcontrib>Bouravlev, A. D.</creatorcontrib><collection>CrossRef</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Goray, L. I.</au><au>Pirogov, E. V.</au><au>Sobolev, M. S.</au><au>Ilkiv, I. V.</au><au>Dashkov, A. S.</au><au>Vainer, Yu. A.</au><au>Svechnikov, M. V.</au><au>Yunin, P. A.</au><au>Chkhalo, N. I.</au><au>Bouravlev, A. D.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Matched X-Ray Reflectometry and Diffractometry of Super-Multiperiod Heterostructures Grown by Molecular Beam Epitaxy</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2019-12-01</date><risdate>2019</risdate><volume>53</volume><issue>14</issue><spage>1910</spage><epage>1913</epage><pages>1910-1913</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>Heterostructures with strongly-coupled multiple quantum wells, such as super-multiperiod superlattices with high perfection, may contain hundreds of layers, whose thicknesses can vary by orders of magnitude. The proposed method of characterization, consisting of the matched application of high-resolution X-ray diffractometry and reflectometry, makes it possible to study super-multiperiod structures of various types, including those with long periods and thin layers, and with high accuracy to determine the thicknesses of layers and roughness/diffuseness of boundaries. The difference between the expected and resulting thicknesses of the layers was 2–7% and 1–3% for the type I (InAs/GaAs) and type II (GaAs/Al 0.3 Ga 0.7 As) samples, respectively. Both types of structures are characterized by sharp interfaces with the RMS width of the transition layers of the order of several Å. Based on the best solution of inverse scattering problems, it is possible to determine with high accuracy both the morphology of the layers and their composition. That can be considered as the first step in the analysis of structures with a very large number of periods.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063782619140082</doi><tpages>4</tpages></addata></record>
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subjects Analysis
Epitaxial growth
Epitaxy
Heterostructures
Inverse scattering
Magnetic Materials
Magnetism
Molecular beam epitaxy
Morphology
Nanostructures Characterization
Physics
Physics and Astronomy
Quantum wells
Reflectometry
Superlattices
Thickness
Thin films
Transition layers
title Matched X-Ray Reflectometry and Diffractometry of Super-Multiperiod Heterostructures Grown by Molecular Beam Epitaxy
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-28T23%3A43%3A03IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-gale_proqu&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Matched%20X-Ray%20Reflectometry%20and%20Diffractometry%20of%20Super-Multiperiod%20Heterostructures%20Grown%20by%20Molecular%20Beam%20Epitaxy&rft.jtitle=Semiconductors%20(Woodbury,%20N.Y.)&rft.au=Goray,%20L.%20I.&rft.date=2019-12-01&rft.volume=53&rft.issue=14&rft.spage=1910&rft.epage=1913&rft.pages=1910-1913&rft.issn=1063-7826&rft.eissn=1090-6479&rft_id=info:doi/10.1134/S1063782619140082&rft_dat=%3Cgale_proqu%3EA609651807%3C/gale_proqu%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2330071855&rft_id=info:pmid/&rft_galeid=A609651807&rfr_iscdi=true