Compact Sandwiched Press-Pack SiC Power Module With Low Stray Inductance and Balanced Thermal Stress
In this letter, a compact silicon carbide (SiC) power module featuring low stray inductance and balanced thermal resistance is proposed. To make full utilization of SiC devices in high-frequency and high-power-density applications, the laminated busbar and double-sided cooling heatsinks are directly...
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Veröffentlicht in: | IEEE transactions on power electronics 2020-03, Vol.35 (3), p.2237-2241 |
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creator | Chang, Yao Luo, Haoze Iannuzzo, Francesco Bahman, Amir Sajjad Li, Wuhua He, Xiangning Blaabjerg, Frede |
description | In this letter, a compact silicon carbide (SiC) power module featuring low stray inductance and balanced thermal resistance is proposed. To make full utilization of SiC devices in high-frequency and high-power-density applications, the laminated busbar and double-sided cooling heatsinks are directly packed as parts of the SiC power module. To balance the mechanical and thermal stress on the chips, a press-pack-like package technology is adopted. The electrical and thermal experiments of the prototype are evaluated to validate the design of low inductance and balanced thermal distribution. |
doi_str_mv | 10.1109/TPEL.2019.2934709 |
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To make full utilization of SiC devices in high-frequency and high-power-density applications, the laminated busbar and double-sided cooling heatsinks are directly packed as parts of the SiC power module. To balance the mechanical and thermal stress on the chips, a press-pack-like package technology is adopted. The electrical and thermal experiments of the prototype are evaluated to validate the design of low inductance and balanced thermal distribution.</description><identifier>ISSN: 0885-8993</identifier><identifier>EISSN: 1941-0107</identifier><identifier>DOI: 10.1109/TPEL.2019.2934709</identifier><identifier>CODEN: ITPEE8</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Busbars ; Fasteners ; Heat sinks ; Inductance ; Logic gates ; Modules ; Multichip modules ; package ; press-pack ; Silicon carbide ; Silicon carbide (SiC) ; stray inductance ; Stress ; Thermal resistance ; Thermal stress ; Thermal stresses</subject><ispartof>IEEE transactions on power electronics, 2020-03, Vol.35 (3), p.2237-2241</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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The electrical and thermal experiments of the prototype are evaluated to validate the design of low inductance and balanced thermal distribution.</description><subject>Busbars</subject><subject>Fasteners</subject><subject>Heat sinks</subject><subject>Inductance</subject><subject>Logic gates</subject><subject>Modules</subject><subject>Multichip modules</subject><subject>package</subject><subject>press-pack</subject><subject>Silicon carbide</subject><subject>Silicon carbide (SiC)</subject><subject>stray inductance</subject><subject>Stress</subject><subject>Thermal resistance</subject><subject>Thermal stress</subject><subject>Thermal stresses</subject><issn>0885-8993</issn><issn>1941-0107</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1LAzEQhoMoWKs_QLwEPG-dJPuRHHWpWqi40IrHkCZTunW7W5NdSv-9u7R4mjk8zzvMS8g9gwljoJ6WxXQ-4cDUhCsRZ6AuyIipmEXAILskI5AyiaRS4prchLAFYHECbERc3uz2xrZ0YWp3KO0GHS08hhAVxv7QRZnTojmgpx-N6yqk32W7ofPmQBetN0c6q11nW1NbpL1PX0w17I4uN-h3phqoPuuWXK1NFfDuPMfk63W6zN-j-efbLH-eR1aItI1SFqPlK8utBIdSgWVJwiVaBTLj0qBKlUllLIDHPI0z68xK9T9nKyNRQiLG5PGUu_fNb4eh1dum83V_UnMhoNcEkz3FTpT1TQge13rvy53xR81AD2XqoUw9lKnPZfbOw8kpEfGfl5mKkywVf4dEbvg</recordid><startdate>20200301</startdate><enddate>20200301</enddate><creator>Chang, Yao</creator><creator>Luo, Haoze</creator><creator>Iannuzzo, Francesco</creator><creator>Bahman, Amir Sajjad</creator><creator>Li, Wuhua</creator><creator>He, Xiangning</creator><creator>Blaabjerg, Frede</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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To make full utilization of SiC devices in high-frequency and high-power-density applications, the laminated busbar and double-sided cooling heatsinks are directly packed as parts of the SiC power module. To balance the mechanical and thermal stress on the chips, a press-pack-like package technology is adopted. The electrical and thermal experiments of the prototype are evaluated to validate the design of low inductance and balanced thermal distribution.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TPEL.2019.2934709</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0001-7138-1902</orcidid><orcidid>https://orcid.org/0000-0002-0953-0097</orcidid><orcidid>https://orcid.org/0000-0003-3949-2172</orcidid><orcidid>https://orcid.org/0000-0001-8311-7412</orcidid><orcidid>https://orcid.org/0000-0001-5103-5068</orcidid><orcidid>https://orcid.org/0000-0002-0345-5815</orcidid><oa>free_for_read</oa></addata></record> |
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subjects | Busbars Fasteners Heat sinks Inductance Logic gates Modules Multichip modules package press-pack Silicon carbide Silicon carbide (SiC) stray inductance Stress Thermal resistance Thermal stress Thermal stresses |
title | Compact Sandwiched Press-Pack SiC Power Module With Low Stray Inductance and Balanced Thermal Stress |
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