Effect of doping on nanoindentation induced incipient plasticity in InP crystal
This article is concerned with incipient plasticity in an InP crystal studied by nanoindentation experiments and ab initio simulations. We consider dislocation-nucleation phenomena and pressure-induced phase transformation to be the alternative mechanisms that govern the elastic-plastic transition d...
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description | This article is concerned with incipient plasticity in an InP crystal studied by nanoindentation experiments and ab initio simulations. We consider dislocation-nucleation phenomena and pressure-induced phase transformation to be the alternative mechanisms that govern the elastic-plastic transition displayed by the InP crystal. The ab initio calculations have shown that S- and Zn-doping of the low-pressure zinc blende structure of InP decreases the pressure of phase transformation of the rock-salt structure. The nanoindentation examination of undoped as well as S- and Zn-doped crystals of (001) and (111) orientation revealed an increase in contact pressure at the onset of plastic behavior (pop-in) for doped specimens. As they are contrary to the outcomes of the ab initio simulations, the results of nanoindentation experiments point toward dislocation nucleation as an origin of InP incipient plasticity. Additional investigations were performed on an undoped as well as Si-doped GaAs crystal, which showed that the contact pressure at the pop-in event takes a lower value for the Si-doped sample than the undoped sample. This result is in contrast to the case of the InP crystal displaying phase transformation-steered incipient plasticity of GaAs. Our investigations exhibit the complexity of the semiconductor’s nanodeformation simultaneously providing a convenient way to identify its incipient plasticity mechanism. |
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We consider dislocation-nucleation phenomena and pressure-induced phase transformation to be the alternative mechanisms that govern the elastic-plastic transition displayed by the InP crystal. The ab initio calculations have shown that S- and Zn-doping of the low-pressure zinc blende structure of InP decreases the pressure of phase transformation of the rock-salt structure. The nanoindentation examination of undoped as well as S- and Zn-doped crystals of (001) and (111) orientation revealed an increase in contact pressure at the onset of plastic behavior (pop-in) for doped specimens. As they are contrary to the outcomes of the ab initio simulations, the results of nanoindentation experiments point toward dislocation nucleation as an origin of InP incipient plasticity. Additional investigations were performed on an undoped as well as Si-doped GaAs crystal, which showed that the contact pressure at the pop-in event takes a lower value for the Si-doped sample than the undoped sample. This result is in contrast to the case of the InP crystal displaying phase transformation-steered incipient plasticity of GaAs. Our investigations exhibit the complexity of the semiconductor’s nanodeformation simultaneously providing a convenient way to identify its incipient plasticity mechanism.</description><identifier>ISSN: 2158-3226</identifier><identifier>EISSN: 2158-3226</identifier><identifier>DOI: 10.1063/1.5128784</identifier><identifier>CODEN: AAIDBI</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Contact pressure ; Crystal structure ; Doped crystals ; Doping ; Gallium arsenide ; Indium phosphides ; Low pressure ; Nanoindentation ; Nucleation ; Phase transitions ; Plastic properties ; Silicon ; Zinc ; Zincblende</subject><ispartof>AIP advances, 2019-12, Vol.9 (12), p.125323-125323-5</ispartof><rights>Author(s)</rights><rights>2019 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c428t-91da35d071dc705629a6e8408d6c2f3aa85ac5aa04b381d5fbe28cb4065299c53</citedby><cites>FETCH-LOGICAL-c428t-91da35d071dc705629a6e8408d6c2f3aa85ac5aa04b381d5fbe28cb4065299c53</cites><orcidid>0000-0002-2708-7375 ; 0000-0003-1766-1350 ; 0000-0002-6482-3319</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,864,2102,27924,27925</link.rule.ids></links><search><creatorcontrib>Chrobak, Dariusz</creatorcontrib><creatorcontrib>Chrobak, Artur</creatorcontrib><creatorcontrib>Nowak, Roman</creatorcontrib><title>Effect of doping on nanoindentation induced incipient plasticity in InP crystal</title><title>AIP advances</title><description>This article is concerned with incipient plasticity in an InP crystal studied by nanoindentation experiments and ab initio simulations. We consider dislocation-nucleation phenomena and pressure-induced phase transformation to be the alternative mechanisms that govern the elastic-plastic transition displayed by the InP crystal. The ab initio calculations have shown that S- and Zn-doping of the low-pressure zinc blende structure of InP decreases the pressure of phase transformation of the rock-salt structure. The nanoindentation examination of undoped as well as S- and Zn-doped crystals of (001) and (111) orientation revealed an increase in contact pressure at the onset of plastic behavior (pop-in) for doped specimens. As they are contrary to the outcomes of the ab initio simulations, the results of nanoindentation experiments point toward dislocation nucleation as an origin of InP incipient plasticity. Additional investigations were performed on an undoped as well as Si-doped GaAs crystal, which showed that the contact pressure at the pop-in event takes a lower value for the Si-doped sample than the undoped sample. This result is in contrast to the case of the InP crystal displaying phase transformation-steered incipient plasticity of GaAs. Our investigations exhibit the complexity of the semiconductor’s nanodeformation simultaneously providing a convenient way to identify its incipient plasticity mechanism.</description><subject>Contact pressure</subject><subject>Crystal structure</subject><subject>Doped crystals</subject><subject>Doping</subject><subject>Gallium arsenide</subject><subject>Indium phosphides</subject><subject>Low pressure</subject><subject>Nanoindentation</subject><subject>Nucleation</subject><subject>Phase transitions</subject><subject>Plastic properties</subject><subject>Silicon</subject><subject>Zinc</subject><subject>Zincblende</subject><issn>2158-3226</issn><issn>2158-3226</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>DOA</sourceid><recordid>eNp9kEtLAzEUhQdRsNQu_AcDrhSm5jnNLKVULRR0oetwJ4-SMk7GZCr035t2ShUEs7k3h49zLifLrjGaYlTSezzlmIiZYGfZiGAuCkpIef5rv8wmMW5QeqzCSLBR9rKw1qg-9zbXvnPtOvdt3kLrXatN20Pv0j_tW2V0msp1Lsl510DsnXL9Lon5sn3NVdjFHpqr7MJCE83kOMfZ--Pibf5crF6elvOHVaEYEX1RYQ2UazTDWs0QL0kFpREMCV0qYimA4KA4AGI1FVhzWxsiVM1QyUlVKU7H2XLw1R42sgvuA8JOenDyIPiwlhDShY2RqOa0ZDNBlUGMEACKMezbELZCiqDkdTN4dcF_bk3s5cZvQ5vOl4SmOMEY2SfeDpQKPsZg7CkVI7mvX2J5rD-xdwMbU0WHDk_wlw8_oOy0_Q_-6_wNUXqRTw</recordid><startdate>20191201</startdate><enddate>20191201</enddate><creator>Chrobak, Dariusz</creator><creator>Chrobak, Artur</creator><creator>Nowak, Roman</creator><general>American Institute of Physics</general><general>AIP Publishing LLC</general><scope>AJDQP</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>DOA</scope><orcidid>https://orcid.org/0000-0002-2708-7375</orcidid><orcidid>https://orcid.org/0000-0003-1766-1350</orcidid><orcidid>https://orcid.org/0000-0002-6482-3319</orcidid></search><sort><creationdate>20191201</creationdate><title>Effect of doping on nanoindentation induced incipient plasticity in InP crystal</title><author>Chrobak, Dariusz ; Chrobak, Artur ; Nowak, Roman</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c428t-91da35d071dc705629a6e8408d6c2f3aa85ac5aa04b381d5fbe28cb4065299c53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Contact pressure</topic><topic>Crystal structure</topic><topic>Doped crystals</topic><topic>Doping</topic><topic>Gallium arsenide</topic><topic>Indium phosphides</topic><topic>Low pressure</topic><topic>Nanoindentation</topic><topic>Nucleation</topic><topic>Phase transitions</topic><topic>Plastic properties</topic><topic>Silicon</topic><topic>Zinc</topic><topic>Zincblende</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chrobak, Dariusz</creatorcontrib><creatorcontrib>Chrobak, Artur</creatorcontrib><creatorcontrib>Nowak, Roman</creatorcontrib><collection>AIP Open Access Journals</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>AIP advances</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chrobak, Dariusz</au><au>Chrobak, Artur</au><au>Nowak, Roman</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of doping on nanoindentation induced incipient plasticity in InP crystal</atitle><jtitle>AIP advances</jtitle><date>2019-12-01</date><risdate>2019</risdate><volume>9</volume><issue>12</issue><spage>125323</spage><epage>125323-5</epage><pages>125323-125323-5</pages><issn>2158-3226</issn><eissn>2158-3226</eissn><coden>AAIDBI</coden><abstract>This article is concerned with incipient plasticity in an InP crystal studied by nanoindentation experiments and ab initio simulations. We consider dislocation-nucleation phenomena and pressure-induced phase transformation to be the alternative mechanisms that govern the elastic-plastic transition displayed by the InP crystal. The ab initio calculations have shown that S- and Zn-doping of the low-pressure zinc blende structure of InP decreases the pressure of phase transformation of the rock-salt structure. The nanoindentation examination of undoped as well as S- and Zn-doped crystals of (001) and (111) orientation revealed an increase in contact pressure at the onset of plastic behavior (pop-in) for doped specimens. As they are contrary to the outcomes of the ab initio simulations, the results of nanoindentation experiments point toward dislocation nucleation as an origin of InP incipient plasticity. Additional investigations were performed on an undoped as well as Si-doped GaAs crystal, which showed that the contact pressure at the pop-in event takes a lower value for the Si-doped sample than the undoped sample. This result is in contrast to the case of the InP crystal displaying phase transformation-steered incipient plasticity of GaAs. Our investigations exhibit the complexity of the semiconductor’s nanodeformation simultaneously providing a convenient way to identify its incipient plasticity mechanism.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.5128784</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0002-2708-7375</orcidid><orcidid>https://orcid.org/0000-0003-1766-1350</orcidid><orcidid>https://orcid.org/0000-0002-6482-3319</orcidid><oa>free_for_read</oa></addata></record> |
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subjects | Contact pressure Crystal structure Doped crystals Doping Gallium arsenide Indium phosphides Low pressure Nanoindentation Nucleation Phase transitions Plastic properties Silicon Zinc Zincblende |
title | Effect of doping on nanoindentation induced incipient plasticity in InP crystal |
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