High transmittance Er-doped ZnO thin films as electrodes for organic light-emitting diodes
Rare earth element-Erbium (Er) doped ZnO (ErZO) thin films were deposited on glass substrates by pulsed laser deposition (PLD). The effect of the Er doping concentration on photoelectric properties of ErZO thin films was investigated in the range of 0–2.0 wt. %. The Er doping resulted in the improve...
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| Veröffentlicht in: | Applied physics letters 2019-12, Vol.115 (25) |
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| creator | Shi, Ying-Li Hu, Yun Wang, Shuang-Peng Liao, Liang-Sheng Ling, Francis Chi-Chung |
| description | Rare earth element-Erbium (Er) doped ZnO (ErZO) thin films were deposited on glass substrates by pulsed laser deposition (PLD). The effect of the Er doping concentration on photoelectric properties of ErZO thin films was investigated in the range of 0–2.0 wt. %. The Er doping resulted in the improvement of n-type conductivity as compared with intrinsic ZnO thin films. The optimized ErZO thin films present the low resistivity of 3.4 × 10−4 Ω/cm, high carrier concentration of 5.9 × 1020/cm3, and high visible optical transmittance (∼93%) when the Er content is 1.0 wt. %. The ErZO thin films were used as transparent anodes to fabricate organic light-emitting diodes (OLEDs). Impressively, with ErZO as the anode, the current efficiency of the OLED device can reach as high as 86.5 cd/A, which was increased by 14% when compared with the reference OLED device (76.0 cd/A) using indium tin oxide as the anode. |
| doi_str_mv | 10.1063/1.5129065 |
| format | Article |
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The effect of the Er doping concentration on photoelectric properties of ErZO thin films was investigated in the range of 0–2.0 wt. %. The Er doping resulted in the improvement of n-type conductivity as compared with intrinsic ZnO thin films. The optimized ErZO thin films present the low resistivity of 3.4 × 10−4 Ω/cm, high carrier concentration of 5.9 × 1020/cm3, and high visible optical transmittance (∼93%) when the Er content is 1.0 wt. %. The ErZO thin films were used as transparent anodes to fabricate organic light-emitting diodes (OLEDs). Impressively, with ErZO as the anode, the current efficiency of the OLED device can reach as high as 86.5 cd/A, which was increased by 14% when compared with the reference OLED device (76.0 cd/A) using indium tin oxide as the anode.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.5129065</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Anodes ; Applied physics ; Carrier density ; Current efficiency ; Doping ; Erbium ; Flat panel displays ; Glass substrates ; Indium tin oxides ; Light emitting diodes ; Organic light emitting diodes ; Photoelectric effect ; Photoelectricity ; Pulsed laser deposition ; Pulsed lasers ; Rare earth elements ; Thin films ; Transmittance ; Zinc oxide</subject><ispartof>Applied physics letters, 2019-12, Vol.115 (25)</ispartof><rights>Author(s)</rights><rights>2019 Author(s). 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The effect of the Er doping concentration on photoelectric properties of ErZO thin films was investigated in the range of 0–2.0 wt. %. The Er doping resulted in the improvement of n-type conductivity as compared with intrinsic ZnO thin films. The optimized ErZO thin films present the low resistivity of 3.4 × 10−4 Ω/cm, high carrier concentration of 5.9 × 1020/cm3, and high visible optical transmittance (∼93%) when the Er content is 1.0 wt. %. The ErZO thin films were used as transparent anodes to fabricate organic light-emitting diodes (OLEDs). Impressively, with ErZO as the anode, the current efficiency of the OLED device can reach as high as 86.5 cd/A, which was increased by 14% when compared with the reference OLED device (76.0 cd/A) using indium tin oxide as the anode.</description><subject>Anodes</subject><subject>Applied physics</subject><subject>Carrier density</subject><subject>Current efficiency</subject><subject>Doping</subject><subject>Erbium</subject><subject>Flat panel displays</subject><subject>Glass substrates</subject><subject>Indium tin oxides</subject><subject>Light emitting diodes</subject><subject>Organic light emitting diodes</subject><subject>Photoelectric effect</subject><subject>Photoelectricity</subject><subject>Pulsed laser deposition</subject><subject>Pulsed lasers</subject><subject>Rare earth elements</subject><subject>Thin films</subject><subject>Transmittance</subject><subject>Zinc oxide</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNp9kEtLAzEUhYMoWKsL_0HAlcLUPGYyM0sp1QqFbnTTTUjzaFOmyZikgv_eDC26ELybw-V-9xw4ANxiNMGI0Uc8qTBpEavOwAijui4oxs05GCGEaMHaCl-Cqxh3ea0IpSOwmtvNFqYgXNzblISTGs5CoXyvFVy5JUxb66Cx3T5CEaHutEzBKx2h8QH6sBHOSthlk1TowcG6DVR2IK7BhRFd1DcnHYP359nbdF4sli-v06dFISmp81dTNkQTUq-x0UJolEURLFieGmHKWLtuJGmlVgaXlEnTCGPq4YQMawQdg7ujbx_8x0HHxHf-EFyO5CQnYNSUbZmp-yMlg48xaMP7YPcifHGM-FAdx_xUXWYfjmyUNolkvfuBP334BXmvzH_wX-dv_OV8kg</recordid><startdate>20191216</startdate><enddate>20191216</enddate><creator>Shi, Ying-Li</creator><creator>Hu, Yun</creator><creator>Wang, Shuang-Peng</creator><creator>Liao, Liang-Sheng</creator><creator>Ling, Francis Chi-Chung</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-4757-1065</orcidid><orcidid>https://orcid.org/0000-0002-2352-9666</orcidid><orcidid>https://orcid.org/0000-0002-1976-5113</orcidid></search><sort><creationdate>20191216</creationdate><title>High transmittance Er-doped ZnO thin films as electrodes for organic light-emitting diodes</title><author>Shi, Ying-Li ; Hu, Yun ; Wang, Shuang-Peng ; Liao, Liang-Sheng ; Ling, Francis Chi-Chung</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c327t-e8482e227b1feaae01fed21a66667013669b8c29cedf1436cf8aff770130f68a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Anodes</topic><topic>Applied physics</topic><topic>Carrier density</topic><topic>Current efficiency</topic><topic>Doping</topic><topic>Erbium</topic><topic>Flat panel displays</topic><topic>Glass substrates</topic><topic>Indium tin oxides</topic><topic>Light emitting diodes</topic><topic>Organic light emitting diodes</topic><topic>Photoelectric effect</topic><topic>Photoelectricity</topic><topic>Pulsed laser deposition</topic><topic>Pulsed lasers</topic><topic>Rare earth elements</topic><topic>Thin films</topic><topic>Transmittance</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Shi, Ying-Li</creatorcontrib><creatorcontrib>Hu, Yun</creatorcontrib><creatorcontrib>Wang, Shuang-Peng</creatorcontrib><creatorcontrib>Liao, Liang-Sheng</creatorcontrib><creatorcontrib>Ling, Francis Chi-Chung</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Shi, Ying-Li</au><au>Hu, Yun</au><au>Wang, Shuang-Peng</au><au>Liao, Liang-Sheng</au><au>Ling, Francis Chi-Chung</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High transmittance Er-doped ZnO thin films as electrodes for organic light-emitting diodes</atitle><jtitle>Applied physics letters</jtitle><date>2019-12-16</date><risdate>2019</risdate><volume>115</volume><issue>25</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Rare earth element-Erbium (Er) doped ZnO (ErZO) thin films were deposited on glass substrates by pulsed laser deposition (PLD). The effect of the Er doping concentration on photoelectric properties of ErZO thin films was investigated in the range of 0–2.0 wt. %. The Er doping resulted in the improvement of n-type conductivity as compared with intrinsic ZnO thin films. The optimized ErZO thin films present the low resistivity of 3.4 × 10−4 Ω/cm, high carrier concentration of 5.9 × 1020/cm3, and high visible optical transmittance (∼93%) when the Er content is 1.0 wt. %. The ErZO thin films were used as transparent anodes to fabricate organic light-emitting diodes (OLEDs). Impressively, with ErZO as the anode, the current efficiency of the OLED device can reach as high as 86.5 cd/A, which was increased by 14% when compared with the reference OLED device (76.0 cd/A) using indium tin oxide as the anode.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.5129065</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0003-4757-1065</orcidid><orcidid>https://orcid.org/0000-0002-2352-9666</orcidid><orcidid>https://orcid.org/0000-0002-1976-5113</orcidid></addata></record> |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Anodes Applied physics Carrier density Current efficiency Doping Erbium Flat panel displays Glass substrates Indium tin oxides Light emitting diodes Organic light emitting diodes Photoelectric effect Photoelectricity Pulsed laser deposition Pulsed lasers Rare earth elements Thin films Transmittance Zinc oxide |
| title | High transmittance Er-doped ZnO thin films as electrodes for organic light-emitting diodes |
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