$Refractive index sensing using a Si-based light source embedded in a fully integrated monolithic transceiver$

Refractive index sensing using a Si-based light source embedded in a fully integrated monolithic transceiver

This work proposes and demonstrates the concept of a complementary metal-oxide-semiconductor (CMOS)-compatible electrophotonic monolithic refractive index sensor in which a Si-based light source is directly integrated. The device consists of an embedded light emitter, a waveguide, a sensing area to...

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Veröffentlicht in:	AIP advances 2019-12, Vol.9 (12), p.125215-125215-8
Hauptverfasser:	González-Fernández, A. A., Hernández-Montero, William W., Hernández-Betanzos, J., Domínguez, C., Aceves-Mijares, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Change detection CMOS Computer simulation Detection Emitters Light sources Metal oxides Photoelectric effect Photoelectric emission Refractivity Transceivers
Online-Zugang:	Volltext
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